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Items: 1 to 20 of 189

1.

Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth.

Marshall AF, Goldthorpe IA, Adhikari H, Koto M, Wang YC, Fu L, Olsson E, McIntyre PC.

Nano Lett. 2010 Sep 8;10(9):3302-6. doi: 10.1021/nl100913d.

PMID:
20687570
2.

Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature.

Adhikari H, Marshall AF, Goldthorpe IA, Chidsey CE, McIntyre PC.

ACS Nano. 2007 Dec;1(5):415-22. doi: 10.1021/nn7001486.

PMID:
19206662
3.

Formation of metastable liquid catalyst during subeutectic growth of germanium nanowires.

Gamalski AD, Tersoff J, Sharma R, Ducati C, Hofmann S.

Nano Lett. 2010 Aug 11;10(8):2972-6. doi: 10.1021/nl101349e.

PMID:
20608714
4.

Germanium nanowire growth below the eutectic temperature.

Kodambaka S, Tersoff J, Reuter MC, Ross FM.

Science. 2007 May 4;316(5825):729-32.

5.

Formation and stabilization of single-crystalline metastable AuGe phases in Ge nanowires.

Sutter E, Sutter P.

Nanotechnology. 2011 Jul 22;22(29):295605. doi: 10.1088/0957-4484/22/29/295605. Epub 2011 Jun 17.

PMID:
21680958
6.

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures.

Lee JS, Brittman S, Yu D, Park H.

J Am Chem Soc. 2008 May 14;130(19):6252-8. doi: 10.1021/ja711481b. Epub 2008 Apr 11.

PMID:
18402451
7.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

Jung JH, Yoon HS, Kim YL, Song MS, Kim Y, Chen ZG, Zou J, Choi DY, Kang JH, Joyce HJ, Gao Q, Hoe Tan H, Jagadish C.

Nanotechnology. 2010 Jul 23;21(29):295602. doi: 10.1088/0957-4484/21/29/295602. Epub 2010 Jun 29.

PMID:
20585174
8.

Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.

Sutter E, Sutter P.

Nano Lett. 2008 Feb;8(2):411-4. doi: 10.1021/nl0719630. Epub 2008 Jan 15.

PMID:
18193910
9.

In-situ observations of nanoscale effects in germanium nanowire growth with ternary eutectic alloys.

Biswas S, O'Regan C, Morris MA, Holmes JD.

Small. 2015 Jan 7;11(1):103-11. doi: 10.1002/smll.201401240. Epub 2014 Sep 5.

PMID:
25196560
10.

Selective growth of Ge nanowires by low-temperature thermal evaporation.

Sutter E, Ozturk B, Sutter P.

Nanotechnology. 2008 Oct 29;19(43):435607. doi: 10.1088/0957-4484/19/43/435607. Epub 2008 Sep 22.

PMID:
21832702
11.

Size-dependent phase diagram of nanoscale alloy drops used in vapor--liquid--solid growth of semiconductor nanowires.

Sutter EA, Sutter PW.

ACS Nano. 2010 Aug 24;4(8):4943-7. doi: 10.1021/nn101366w.

PMID:
20731466
12.
13.

Manipulating the growth kinetics of vapor-liquid-solid propagated Ge nanowires.

Biswas S, O'Regan C, Petkov N, Morris MA, Holmes JD.

Nano Lett. 2013 Sep 11;13(9):4044-52. doi: 10.1021/nl401250x. Epub 2013 Aug 15.

PMID:
23919662
14.

Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires.

Wacaser BA, Reuter MC, Khayyat MM, Wen CY, Haight R, Guha S, Ross FM.

Nano Lett. 2009 Sep;9(9):3296-301. doi: 10.1021/nl9015792.

PMID:
19639967
15.

Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

Um HD, Jee SW, Park KT, Jung JY, Guo Z, Lee JH.

J Nanosci Nanotechnol. 2011 Jul;11(7):6118-21.

PMID:
22121669
16.

Inherent control of growth, morphology, and defect formation in germanium nanowires.

Biswas S, Singha A, Morris MA, Holmes JD.

Nano Lett. 2012 Nov 14;12(11):5654-63. doi: 10.1021/nl302800u. Epub 2012 Oct 18.

PMID:
23066796
17.

Molecular simulation of the crystallization of aluminum from the supercooled liquid.

Desgranges C, Delhommelle J.

J Chem Phys. 2007 Oct 14;127(14):144509.

PMID:
17935411
18.

Controlling the growth of Si/Ge nanowires and heterojunctions using silver-gold alloy catalysts.

Chou YC, Wen CY, Reuter MC, Su D, Stach EA, Ross FM.

ACS Nano. 2012 Jul 24;6(7):6407-15. doi: 10.1021/nn301978x. Epub 2012 Jul 2.

PMID:
22708581
19.

Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy.

Wiethoff C, Ross FM, Copel M, Horn-von Hoegen M, Meyer Zu Heringdorf FJ.

Nano Lett. 2008 Sep;8(9):3065-8. doi: 10.1021/nl801146q. Epub 2008 Aug 19.

PMID:
18710295
20.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5. Epub 2007 Sep 26.

PMID:
17894516

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