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Items: 1 to 20 of 122

1.

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.

Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ.

Nanoscale Res Lett. 2010 Apr 22;5(6):1079-84. doi: 10.1007/s11671-010-9605-2.

2.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.

Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

PMID:
21384043
3.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
4.

InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

Jiang Q, Tang M, Chen S, Wu J, Seeds A, Liu H.

Opt Express. 2014 Sep 22;22(19):23242-8. doi: 10.1364/OE.22.023242.

PMID:
25321793
5.

Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructures.

Yan X, Zhang X, Li J, Wu Y, Cui J, Ren X.

Nanoscale. 2015 Jan 21;7(3):1110-5. doi: 10.1039/c4nr05486e.

PMID:
25482135
6.

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells.

Dong H, Sun J, Ma S, Liang J, Lu T, Liu X, Xu B.

Nanoscale. 2016 Mar 21;8(11):6043-56. doi: 10.1039/c5nr07938a. Epub 2016 Mar 1.

PMID:
26926840
7.

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.

Wang ZM, Xie YZ, Kunets VP, Dorogan VG, Mazur YI, Salamo GJ.

Nanoscale Res Lett. 2010 May 27;5(8):1320-3. doi: 10.1007/s11671-010-9645-7.

8.

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

Kafar A, Stanczyk S, Sarzynski M, Grzanka S, Goss J, Targowski G, Nowakowska-Siwinska A, Suski T, Perlin P.

Opt Express. 2016 May 2;24(9):9673-82. doi: 10.1364/OE.24.009673.

PMID:
27137581
9.

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs.

Wang HC, Chen MC, Lin YS, Lu MY, Lin KI, Cheng YC.

Nanoscale Res Lett. 2017 Nov 9;12(1):591. doi: 10.1186/s11671-017-2359-3.

PMID:
29124372
10.

Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate.

Kim HJ, Mothohisa J, Fukui T.

Nanoscale Res Lett. 2012 Feb 6;7:104. doi: 10.1186/1556-276X-7-104.

11.

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate.

Bennour M, Saidi F, Bouzaïene L, Sfaxi L, Maaref H.

J Appl Phys. 2012 Jan 15;111(2):24310-243107. Epub 2012 Jan 25.

12.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC.

J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6.

PMID:
19441518
13.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
14.

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.

Benyoucef M, Zuerbig V, Reithmaier JP, Kroh T, Schell AW, Aichele T, Benson O.

Nanoscale Res Lett. 2012 Aug 31;7(1):493. doi: 10.1186/1556-276X-7-493.

15.

Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.

Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL.

Nanotechnology. 2008 Oct 29;19(43):435710. doi: 10.1088/0957-4484/19/43/435710. Epub 2008 Sep 22.

PMID:
21832714
16.

Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates.

Lee J, Wang ZhM, Kim E, Kim N, Park Sh, Salamo G.

Nanoscale Res Lett. 2009 Nov 15;5(2):308-14. doi: 10.1007/s11671-009-9481-9.

17.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316
18.

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing.

Makhloufi H, Boonpeng P, Mazzucato S, Nicolai J, Arnoult A, Hungria T, Lacoste G, Gatel C, Ponchet A, Carrère H, Marie X, Fontaine C.

Nanoscale Res Lett. 2014 Mar 17;9(1):123. doi: 10.1186/1556-276X-9-123.

19.

Photoluminescence study of type-II InGaPN/GaAs quantum wells.

Kaewket D, Sanorpim S, Tungasmita S, Katayama R, Onabe K.

J Nanosci Nanotechnol. 2010 Nov;10(11):7154-7.

PMID:
21137886
20.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784

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