Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 93

1.

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator.

Ngo CY, Yoon SF, Loke WK, Cao Q, Lim DR, Wong V, Sim YK, Chua SJ.

Nanoscale Res Lett. 2008 Dec;3(12):486-90. doi: 10.1007/s11671-008-9184-7. Epub 2008 Oct 21.

2.

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators.

Lee SY, Yoon SF, Ngo AC, Guo T.

Nanoscale Res Lett. 2013 Feb 6;8(1):59. doi: 10.1186/1556-276X-8-59.

3.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

Sandall I, Ng JS, David JP, Tan CH, Wang T, Liu H.

Opt Express. 2012 May 7;20(10):10446-52. doi: 10.1364/OE.20.010446.

PMID:
22565669
4.

Lasing characteristics of InP-based InAs quantum dots depending on InGaAsP waveguide conditions.

Jo B, Lee H, Choi I, Kim J, Kim JS, Han WS, Song JH, Oh DK, Noh SK, Leem JY.

J Nanosci Nanotechnol. 2014 Dec;14(12):9623-7.

PMID:
25971109
5.

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

Feng D, Liao S, Liang H, Fong J, Bijlani B, Shafiiha R, Luff BJ, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2012 Sep 24;20(20):22224-32. doi: 10.1364/OE.20.022224.

PMID:
23037370
6.

Two-dimensional array self-assembled quantum dot sub-diffraction waveguides with low loss and low crosstalk.

Wang CJ, Parviz BA, Lin LY.

Nanotechnology. 2008 Jul 23;19(29):295201. doi: 10.1088/0957-4484/19/29/295201. Epub 2008 Jun 10.

PMID:
21730597
7.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

Feng NN, Liao S, Feng D, Wang X, Dong P, Liang H, Kung CC, Qian W, Liu Y, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 25;19(9):8715-20. doi: 10.1364/OE.19.008715.

PMID:
21643123
8.

Exciton fine structure and spin relaxation in semiconductor colloidal quantum dots.

Kim J, Wong CY, Scholes GD.

Acc Chem Res. 2009 Aug 18;42(8):1037-46. doi: 10.1021/ar8002046.

PMID:
19425542
9.
10.

Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration.

Zhu S, Lo GQ, Kwong DL.

Opt Express. 2014 Jul 28;22(15):17930-47. doi: 10.1364/OE.22.017930.

PMID:
25089413
11.

Optical modulator on silicon employing germanium quantum wells.

Roth JE, Fidaner O, Schaevitz RK, Kuo YH, Kamins TI, Harris JS, Miller DA.

Opt Express. 2007 Apr 30;15(9):5851-9.

PMID:
19532843
12.

Near-infrared nano-imaging spectroscopy using a phase change mask method.

Sato Y, Kanazawa S, Saiki T.

Microscopy (Oxf). 2014 Nov;63 Suppl 1:i10. doi: 10.1093/jmicro/dfu089.

PMID:
25359798
13.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

Strauss M, Höfling S, Forchel A.

Nanotechnology. 2009 Dec 16;20(50):505601. doi: 10.1088/0957-4484/20/50/505601. Epub 2009 Nov 12.

PMID:
19907066
14.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
15.

Quantum theory of electroabsorption in semiconductor nanocrystals.

Tepliakov NV, Leonov MY, Baranov AV, Fedorov AV, Rukhlenko ID.

Opt Express. 2016 Jan 25;24(2):A52-7. doi: 10.1364/OE.24.000A52.

PMID:
26832597
16.

Capacitance transient analysis of different-sized InAs/GaAs quantum dot structures.

Song H, Kim JS, Kim EK, Lee SJ, Noh SK.

J Nanosci Nanotechnol. 2011 Jul;11(7):6504-9.

PMID:
22121745
17.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

Feng NN, Feng D, Liao S, Wang X, Dong P, Liang H, Kung CC, Qian W, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 11;19(8):7062-7. doi: 10.1364/OE.19.007062.

PMID:
21503018
19.

Quantum dot semiconductor disk laser at 1.3  μm.

Rantamäki A, Sokolovskii GS, Blokhin SA, Dudelev VV, Soboleva KK, Bobrov MA, Kuzmenkov AG, Vasil'ev AP, Gladyshev AG, Maleev NA, Ustinov VM, Okhotnikov O.

Opt Lett. 2015 Jul 15;40(14):3400-3. doi: 10.1364/OL.40.003400.

PMID:
26176479
20.

Morphology and optical properties of single- and multi-layer InAs quantum dots.

Hsu CC, Hsu RQ, Wu YH.

J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S149-54. doi: 10.1093/jmicro/dfq053. Epub 2010 Jun 24.

PMID:
20576720

Supplemental Content

Support Center