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Items: 1 to 20 of 101

1.

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.

Kim SK, Lee JW, Ee HS, Moon YT, Kwon SH, Kwon H, Park HG.

Opt Express. 2010 May 24;18(11):11025-32. doi: 10.1364/OE.18.011025.

PMID:
20588958
2.

Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.

Kim SK, Park HG.

Opt Express. 2013 Jun 17;21(12):14566-72. doi: 10.1364/OE.21.014566.

PMID:
23787644
3.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

Chen JT, Lai WC, Kao YJ, Yang YY, Sheu JK.

Opt Express. 2012 Feb 27;20(5):5689-95. doi: 10.1364/OE.20.005689.

PMID:
22418376
4.

Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.

Kim SJ, Kim KH, Kim TG.

Opt Express. 2013 Apr 8;21(7):8062-8. doi: 10.1364/OE.21.008062.

PMID:
23571896
5.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
6.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
7.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
8.

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F.

Opt Express. 2012 Aug 13;20(17):18537-44. doi: 10.1364/OE.20.018537.

PMID:
23038492
9.

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.

Tien CH, Chen KY, Hsu CP, Horng RH.

Opt Express. 2014 Oct 20;22 Suppl 6:A1462-8. doi: 10.1364/OE.22.0A1462.

PMID:
25607303
10.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
11.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
12.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

Yum WS, Jeon JW, Sung JS, Seong TY.

Opt Express. 2012 Aug 13;20(17):19194-9. doi: 10.1364/OE.20.019194.

PMID:
23038560
13.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
14.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
15.

Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.

Dang S, Li C, Jia W, Zhang Z, Li T, Han P, Xu B.

Opt Express. 2012 Oct 8;20(21):23290-9. doi: 10.1364/OE.20.023290.

PMID:
23188292
16.

An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.

Kim SH, Park HH, Song YH, Park HJ, Kim JB, Jeon SR, Jeong H, Jeong MS, Yang GM.

Opt Express. 2013 Mar 25;21(6):7125-30. doi: 10.1364/OE.21.007125.

PMID:
23546094
17.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b.

PMID:
22283508
18.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203.

PMID:
19955615
19.

Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.

Ryu HY, Jeon KS, Kang MG, Choi Y, Lee JS.

Opt Express. 2013 Jan 14;21 Suppl 1:A190-200. doi: 10.1364/OE.21.00A190.

PMID:
23389271
20.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
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