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Items: 1 to 20 of 201

1.

Ge-on-Si laser operating at room temperature.

Liu J, Sun X, Camacho-Aguilera R, Kimerling LC, Michel J.

Opt Lett. 2010 Mar 1;35(5):679-81. doi: 10.1364/OL.35.000679.

PMID:
20195317
2.

Direct-gap optical gain of Ge on Si at room temperature.

Liu J, Sun X, Kimerling LC, Michel J.

Opt Lett. 2009 Jun 1;34(11):1738-40.

PMID:
19488166
3.

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.

Sun X, Liu J, Kimerling LC, Michel J.

Opt Lett. 2009 Apr 15;34(8):1198-200.

PMID:
19370116
4.

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.

Liu J, Sun X, Pan D, Wang X, Kimerling LC, Koch TL, Michel J.

Opt Express. 2007 Sep 3;15(18):11272-7.

PMID:
19547484
5.

Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

Chang GE, Chang SW, Chuang SL.

Opt Express. 2009 Jul 6;17(14):11246-58.

PMID:
19582037
6.

Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.

Pizzi G, Virgilio M, Grosso G.

Nanotechnology. 2010 Feb 5;21(5):055202. doi: 10.1088/0957-4484/21/5/055202. Epub 2009 Dec 21.

PMID:
20023310
7.

Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.

Cheng SL, Lu J, Shambat G, Yu HY, Saraswat K, Vuckovic J, Nishi Y.

Opt Express. 2009 Jun 8;17(12):10019-24.

PMID:
19506652
8.

Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser.

Okumura T, Oda K, Kasai J, Sagawa M, Suwa Y.

Opt Express. 2016 May 2;24(9):9132-9. doi: 10.1364/OE.24.009132.

PMID:
27137529
9.

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.

Sun G, Soref RA, Cheng HH.

Opt Express. 2010 Sep 13;18(19):19957-65. doi: 10.1364/OE.18.019957.

PMID:
20940887
10.

[Electroluminescence from a Mn2+ activated SiO2 : Si film on N(+)-Si substrate].

Wen J, Chen T, Ran GZ.

Guang Pu Xue Yu Guang Pu Fen Xi. 2009 Jul;29(7):1736-9. Chinese.

PMID:
19798929
11.

Direct bandgap narrowing in Ge LED's on Si substrates.

Oehme M, Gollhofer M, Widmann D, Schmid M, Kaschel M, Kasper E, Schulze J.

Opt Express. 2013 Jan 28;21(2):2206-11. doi: 10.1364/OE.21.002206.

PMID:
23389201
12.

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Koerner R, Oehme M, Gollhofer M, Schmid M, Kostecki K, Bechler S, Widmann D, Kasper E, Schulze J.

Opt Express. 2015 Jun 1;23(11):14815-22. doi: 10.1364/OE.23.014815.

PMID:
26072840
13.

Infrared absorption of n-type tensile-strained Ge-on-Si.

Wang X, Li H, Camacho-Aguilera R, Cai Y, Kimerling LC, Michel J, Liu J.

Opt Lett. 2013 Mar 1;38(5):652-4. doi: 10.1364/OL.38.000652.

PMID:
23455254
14.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Willander M, Nur O, Zhao QX, Yang LL, Lorenz M, Cao BQ, Zúñiga Pérez J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Che Mofor A, Postels B, Waag A, Boukos N, Travlos A, Kwack HS, Guinard J, Le Si Dang D.

Nanotechnology. 2009 Aug 19;20(33):332001. doi: 10.1088/0957-4484/20/33/332001. Epub 2009 Jul 28.

PMID:
19636090
15.

Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.

Simon J, Protasenko V, Lian C, Xing H, Jena D.

Science. 2010 Jan 1;327(5961):60-4. doi: 10.1126/science.1183226.

16.

Gain analysis of optically-pumped Si nanocrystal waveguide amplifiers on silicon substrate.

Lin GR, Lian CW, Wu CL, Lin YH.

Opt Express. 2010 Apr 26;18(9):9213-9. doi: 10.1364/OE.18.009213.

PMID:
20588768
17.

Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires.

Zhang L, d'Avezac M, Luo JW, Zunger A.

Nano Lett. 2012 Feb 8;12(2):984-91. doi: 10.1021/nl2040892. Epub 2012 Jan 17.

PMID:
22216831
18.

A GaAs polariton light-emitting diode operating near room temperature.

Tsintzos SI, Pelekanos NT, Konstantinidis G, Hatzopoulos Z, Savvidis PG.

Nature. 2008 May 15;453(7193):372-5. doi: 10.1038/nature06979.

PMID:
18480820
19.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
20.

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process.

Capellini G, Reich C, Guha S, Yamamoto Y, Lisker M, Virgilio M, Ghrib A, El Kurdi M, Boucaud P, Tillack B, Schroeder T.

Opt Express. 2014 Jan 13;22(1):399-410. doi: 10.1364/OE.22.000399.

PMID:
24515000

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