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Items: 1 to 20 of 120

1.

Light-emitting diode spherical packages: an equation for the light transmission efficiency.

Moreno I, Bermúdez D, Avendaño-Alejo M.

Appl Opt. 2010 Jan 1;49(1):12-20. doi: 10.1364/AO.49.000012.

PMID:
20062485
2.
3.

Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes.

Ma M, Mont FW, Yan X, Cho J, Schubert EF, Kim GB, Sone C.

Opt Express. 2011 Sep 12;19 Suppl 5:A1135-40. doi: 10.1364/OE.19.0A1135.

PMID:
21935256
4.

Analysis of light-emitting diodes by Monte Carlo photon simulation.

Lee SJ.

Appl Opt. 2001 Mar 20;40(9):1427-37.

PMID:
18357133
5.

Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing.

Liu Z, Wang K, Luo X, Liu S.

Opt Express. 2010 Apr 26;18(9):9398-412. doi: 10.1364/OE.18.009398.

PMID:
20588786
6.
7.

Analysis of the far-field region of LEDs.

Sun CC, Chien WT, Moreno I, Hsieh CC, Lo YC.

Opt Express. 2009 Aug 3;17(16):13918-27.

PMID:
19654799
8.

Active packing method for blue light-emitting diodes with photosensitive polymerization: formation of self-focusing encapsulates.

Wang H, Ryu JH, Lee KS, Tan CH, Jin L, Li S, Hong CH, Cho YH, Liu S.

Opt Express. 2008 Mar 17;16(6):3680-5.

PMID:
18542462
9.

Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging.

Liu Z, Liu S, Wang K, Luo X.

Appl Opt. 2010 Jan 10;49(2):247-57. doi: 10.1364/AO.49.000247.

PMID:
20062512
10.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
11.

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate.

Lee TX, Gao KF, Chien WT, Sun CC.

Opt Express. 2007 May 28;15(11):6670-6.

PMID:
19546977
12.

Effect of chip spacing on light extraction for light-emitting diode array.

Chung SC, Ho PC, Li DR, Lee TX, Yang TH, Sun CC.

Opt Express. 2015 Jun 1;23(11):A640-9. doi: 10.1364/OE.23.00A640.

PMID:
26072888
13.
14.

Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth.

Huang HW, Lee KY, Huang JK, Lin CH, Lin CF, Yu CC, Kuo HC.

J Nanosci Nanotechnol. 2010 Oct;10(10):6363-8.

PMID:
21137731
15.

Light extraction enhanced white light-emitting diodes with multi-layered phosphor configuration.

You JP, Tran NT, Shi FG.

Opt Express. 2010 Mar 1;18(5):5055-60. doi: 10.1364/OE.18.005055.

16.

Designing light-emitting diode arrays for uniform near-field irradiance.

Moreno I, Avendaño-Alejo M, Tzonchev RI.

Appl Opt. 2006 Apr 1;45(10):2265-72.

PMID:
16607994
17.

High-performance light-emitting diodes encapsulated with silica-filled epoxy materials.

Li T, Zhang J, Wang H, Hu Z, Yu Y.

ACS Appl Mater Interfaces. 2013 Sep 25;5(18):8968-81. doi: 10.1021/am402035r. Epub 2013 Sep 6.

PMID:
23978189
18.

Investigation of polarized light emitting diodes with integrated wire grid polarizer.

Sepsi O, Szanda I, Koppa P.

Opt Express. 2010 Jul 5;18(14):14547-52. doi: 10.1364/OE.18.014547.

PMID:
20639940
19.

Analysis of position-dependent light extraction of GaN-based LEDs.

Lee TX, Lin CY, Ma SH, Sun CC.

Opt Express. 2005 May 30;13(11):4175-9.

PMID:
19495330
20.

Color temperature tunable white light emitting diodes packaged with an omni-directional reflector.

Su JC, Lu CL.

Opt Express. 2009 Nov 23;17(24):21408-13. doi: 10.1364/OE.17.021408.

PMID:
19997380

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