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Items: 1 to 20 of 125

1.

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Wang XH, Fu WY, Lai PT, Choi HW.

Opt Express. 2009 Dec 7;17(25):22311-9. doi: 10.1364/OE.17.022311.

PMID:
20052154
2.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
3.

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.

Römer F, Witzigmann B.

Opt Express. 2014 Oct 20;22 Suppl 6:A1440-52. doi: 10.1364/OE.22.0A1440.

PMID:
25607301
4.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N.

Opt Express. 2009 Aug 3;17(16):13747-57.

PMID:
19654782
5.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
6.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
7.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
8.

Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S.

Opt Express. 2013 Jan 14;21 Suppl 1:A53-9. doi: 10.1364/OE.21.000A53.

PMID:
23389275
9.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
10.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
11.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
12.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.

Opt Express. 2011 Jul 4;19(14):12919-24. doi: 10.1364/OE.19.012919.

PMID:
21747444
13.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
14.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
15.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
16.

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.

Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.

Opt Express. 2011 Jan 31;19(3):2029-36. doi: 10.1364/OE.19.002029.

PMID:
21369019
17.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
18.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.

Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.

PMID:
22273946
19.

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.

Opt Express. 2013 Apr 8;21(7):8444-9. doi: 10.1364/OE.21.008444.

PMID:
23571934
20.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

Koester R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ.

Nano Lett. 2015 Apr 8;15(4):2318-23. doi: 10.1021/nl504447j. Epub 2015 Mar 20.

PMID:
25758029

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