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Items: 1 to 20 of 384

1.

ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Keem K, Kang J, Yoon C, Yeom D, Jeong DY, Park B, Park J, Kim S.

J Nanosci Nanotechnol. 2009 Jul;9(7):4240-3.

PMID:
19916437
2.

ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles.

Yeom D, Kang J, Yoon C, Park B, Jeong DY, Koh EK, Kim S.

J Nanosci Nanotechnol. 2009 May;9(5):3256-60.

PMID:
19453000
3.

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.

Keem K, Jeong DY, Kim S, Lee MS, Yeo IS, Chung UI, Moon JT.

Nano Lett. 2006 Jul;6(7):1454-8.

PMID:
16834428
4.

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides.

Yeom D, Kang J, Lee M, Jang J, Yun J, Jeong DY, Yoon C, Koo J, Kim S.

Nanotechnology. 2008 Oct 1;19(39):395204. doi: 10.1088/0957-4484/19/39/395204.

PMID:
21832589
5.
6.

Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.

Liao L, Fan HJ, Yan B, Zhang Z, Chen LL, Li BS, Xing GZ, Shen ZX, Wu T, Sun XW, Wang J, Yu T.

ACS Nano. 2009 Mar 24;3(3):700-6. doi: 10.1021/nn800808s.

PMID:
19249845
7.

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ.

Nano Lett. 2005 Nov;5(11):2281-6.

PMID:
16277468
8.

Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.

Park YK, Umar A, Kim SH, Kim JH, Lee EW, Vaseem M, Hahn YB.

J Nanosci Nanotechnol. 2008 Nov;8(11):6010-6.

PMID:
19198339
9.

Single ZnO nanowire based high-performance field effect transistors (FETs).

Park YK, Umar A, Kim JS, Yang HY, Lee JS, Hahn YB.

J Nanosci Nanotechnol. 2009 Oct;9(10):5839-44.

PMID:
19908462
10.

Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

Yoon J, Hong WK, Jo M, Jo G, Choe M, Park W, Sohn JI, Nedic S, Hwang H, Welland ME, Lee T.

ACS Nano. 2011 Jan 25;5(1):558-64. doi: 10.1021/nn102633z.

PMID:
21155534
11.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire.

Roy S, Gao Z.

Nanotechnology. 2010 Jun 18;21(24):245306. doi: 10.1088/0957-4484/21/24/245306.

PMID:
20498519
12.

Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides.

Park B, Cho K, Yun J, Koo YS, Lee JH, Kim S.

J Nanosci Nanotechnol. 2009 Mar;9(3):1904-8.

PMID:
19435057
13.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

Hong WK, Jo G, Sohn JI, Park W, Choe M, Wang G, Kahng YH, Welland ME, Lee T.

ACS Nano. 2010 Feb 23;4(2):811-8. doi: 10.1021/nn9014246.

PMID:
20112950
14.

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors.

Choe M, Park W, Kang JW, Jeong S, Hong WK, Lee BH, Park SJ, Lee T.

Nanotechnology. 2012 Dec 7;23(48):485201. doi: 10.1088/0957-4484/23/48/485201.

PMID:
23128783
15.

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.

Yeom D, Keem K, Kang J, Jeong DY, Yoon C, Kim D, Kim S.

Nanotechnology. 2008 Jul 2;19(26):265202. doi: 10.1088/0957-4484/19/26/265202.

PMID:
21828674
17.

ZnO nanowire transistors.

Goldberger J, Sirbuly DJ, Law M, Yang P.

J Phys Chem B. 2005 Jan 13;109(1):9-14.

PMID:
16850973
18.

Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.

Lee YT, Ali Raza SR, Jeon PJ, Ha R, Choi HJ, Im S.

Nanoscale. 2013 May 21;5(10):4181-5. doi: 10.1039/c3nr01015e.

PMID:
23584636
19.

Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment.

Park W, Hong WK, Jo G, Wang G, Choe M, Maeng J, Kahng YH, Lee T.

Nanotechnology. 2009 Nov 25;20(47):475702. doi: 10.1088/0957-4484/20/47/475702.

PMID:
19858553
20.

Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.

Kälblein D, Weitz RT, Böttcher HJ, Ante F, Zschieschang U, Kern K, Klauk H.

Nano Lett. 2011 Dec 14;11(12):5309-15. doi: 10.1021/nl202767h.

PMID:
22029286

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