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Items: 1 to 20 of 376

1.

Kinetic control of self-catalyzed indium phosphide nanowires, nanocones, and nanopillars.

Woo RL, Gao L, Goel N, Hudait MK, Wang KL, Kodambaka S, Hicks RF.

Nano Lett. 2009 Jun;9(6):2207-11. doi: 10.1021/nl803584u.

PMID:
19419156
2.

Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.

Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF.

Nano Lett. 2009 Jun;9(6):2223-8. doi: 10.1021/nl803567v. Erratum in: Nano Lett. 2009 Sep;9(9):3379.

PMID:
19413340
3.

Structural transition in indium phosphide nanowires.

Kitauchi Y, Kobayashi Y, Tomioka K, Hara S, Hiruma K, Fukui T, Motohisa J.

Nano Lett. 2010 May 12;10(5):1699-703. doi: 10.1021/nl1000407.

PMID:
20387797
4.

Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111).

Woo RL, Xiao R, Kobayashi Y, Gao L, Goel N, Hudait MK, Mallouk TE, Hicks RF.

Nano Lett. 2008 Dec;8(12):4664-9. doi: 10.1021/nl802433u.

PMID:
19367937
5.

Bidirectional growth of indium phosphide nanowires.

Ikejiri K, Ishizaka F, Tomioka K, Fukui T.

Nano Lett. 2012 Sep 12;12(9):4770-4. doi: 10.1021/nl302202r. Epub 2012 Aug 20.

PMID:
22888965
6.

Structural and optical characterization of strained free-standing InP nanowires.

González JC, da Silva MI, Lozano XS, Zanchet D, Ugarte D, Ribeiro E, Gutiérrez HR, Cotta MA.

J Nanosci Nanotechnol. 2006 Jul;6(7):2182-6.

PMID:
17025146
7.

Epitaxial growth of InP nanowires on germanium.

Bakkers EP, van Dam JA, De Franceschi S, Kouwenhoven LP, Kaiser M, Verheijen M, Wondergem H, van der Sluis P.

Nat Mater. 2004 Nov;3(11):769-73. Epub 2004 Oct 10.

PMID:
15475961
8.

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study.

Xiang Y, Cao L, Conesa-Boj S, Estrade S, Arbiol J, Peiro F, Heiss M, Zardo I, Morante JR, Brongersma ML, Fontcuberta I Morral A.

Nanotechnology. 2009 Jun 17;20(24):245608. doi: 10.1088/0957-4484/20/24/245608. Epub 2009 May 27.

PMID:
19471084
9.

Probing strain in bent semiconductor nanowires with Raman spectroscopy.

Chen J, Conache G, Pistol ME, Gray SM, Borgström MT, Xu H, Xu HQ, Samuelson L, Håkanson U.

Nano Lett. 2010 Apr 14;10(4):1280-6. doi: 10.1021/nl904040y.

PMID:
20192231
10.

Interplay between crystal phase purity and radial growth in InP nanowires.

Poole PJ, Dalacu D, Wu X, Lapointe J, Mnaymneh K.

Nanotechnology. 2012 Sep 28;23(38):385205. doi: 10.1088/0957-4484/23/38/385205. Epub 2012 Sep 5.

PMID:
22948129
11.

High optical quality InP-based nanopillars fabricated by a top-down approach.

Naureen S, Sanatinia R, Shahid N, Anand S.

Nano Lett. 2011 Nov 9;11(11):4805-11. doi: 10.1021/nl202628m. Epub 2011 Sep 30.

PMID:
21942530
12.

Synthesis of long indium nitride nanowires with uniform diameters in large quantities.

Luo S, Zhou W, Zhang Z, Liu L, Dou X, Wang J, Zhao X, Liu D, Gao Y, Song L, Xiang Y, Zhou J, Xie S.

Small. 2005 Oct;1(10):1004-9.

PMID:
17193386
13.

Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires.

Wen CY, Reuter MC, Tersoff J, Stach EA, Ross FM.

Nano Lett. 2010 Feb 10;10(2):514-9. doi: 10.1021/nl903362y.

PMID:
20041666
14.

Two- versus three-dimensional quantum confinement in indium phosphide wires and dots.

Yu H, Li J, Loomis RA, Wang LW, Buhro WE.

Nat Mater. 2003 Aug;2(8):517-20.

PMID:
12872161
15.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Titova LV, Hoang TB, Yarrison-Rice JM, Jackson HE, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Zhang X, Zou J, Smith LM.

Nano Lett. 2007 Nov;7(11):3383-7. Epub 2007 Sep 29.

PMID:
17902724
16.

A method to determine the strain and nucleation sites of stacked nano-objects.

Molina SI, Varela M, Ben T, Sales DL, Pizarro J, Galindo PL, Fuster D, González Y, González L, Pennycook SJ.

J Nanosci Nanotechnol. 2008 Jul;8(7):3422-6.

PMID:
19051889
17.

Twinning superlattices in indium phosphide nanowires.

Algra RE, Verheijen MA, Borgström MT, Feiner LF, Immink G, van Enckevort WJ, Vlieg E, Bakkers EP.

Nature. 2008 Nov 20;456(7220):369-72. doi: 10.1038/nature07570.

PMID:
19020617
18.

Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.

Yu L, O'Donnell B, Alet PJ, Conesa-Boj S, Peiró F, Arbiol J, Cabarrocas PR.

Nanotechnology. 2009 Jun 3;20(22):225604. doi: 10.1088/0957-4484/20/22/225604. Epub 2009 May 13.

PMID:
19436096
19.

Synthesis, characterization, and optical properties of In2O3 semiconductor nanowires.

Wang G, Park J, Wexler D, Park MS, Ahn JH.

Inorg Chem. 2007 Jun 11;46(12):4778-80. Epub 2007 May 12.

PMID:
17497852
20.

Anisotropy of chemical transformation from In2Se3 to CuInSe2 nanowires through solid state reaction.

Schoen DT, Peng H, Cui Y.

J Am Chem Soc. 2009 Jun 17;131(23):7973-5. doi: 10.1021/ja901086t.

PMID:
19507900

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