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Items: 1 to 20 of 97

1.

Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes.

Léonard F, Talin AA, Swartzentruber BS, Picraux ST.

Phys Rev Lett. 2009 Mar 13;102(10):106805.

PMID:
19392144
2.

Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force Microscope.

Guo E, Zeng Z, Shi X, Long X, Wang X.

Langmuir. 2016 Oct 4. [Epub ahead of print]

PMID:
27642768
3.

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

Suyatin DB, Jain V, Nebol'sin VA, Trägårdh J, Messing ME, Wagner JB, Persson O, Timm R, Mikkelsen A, Maximov I, Samuelson L, Pettersson H.

Nat Commun. 2014;5:3221. doi: 10.1038/ncomms4221.

PMID:
24488034
5.

Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

Kral S, Zeiner C, Stöger-Pollach M, Bertagnolli E, den Hertog MI, Lopez-Haro M, Robin E, El Hajraoui K, Lugstein A.

Nano Lett. 2015 Jul 8;15(7):4783-7. doi: 10.1021/acs.nanolett.5b01748.

6.

Controlling the Electrical Transport Properties of Nanocontacts to Nanowires.

Lord AM, Maffeis TG, Kryvchenkova O, Cobley RJ, Kalna K, Kepaptsoglou DM, Ramasse QM, Walton AS, Ward MB, Köble J, Wilks SP.

Nano Lett. 2015 Jul 8;15(7):4248-54. doi: 10.1021/nl503743t.

PMID:
26042356
7.

Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

Periwal P, Sibirev NV, Patriarche G, Salem B, Bassani F, Dubrovskii VG, Baron T.

Nano Lett. 2014 Sep 10;14(9):5140-7. doi: 10.1021/nl5019707.

PMID:
25118977
8.

Current transport mechanism in a metal-GaN nanowire Schottky diode.

Lee SY, Lee SK.

Nanotechnology. 2007 Dec 12;18(49):495701. doi: 10.1088/0957-4484/18/49/495701.

PMID:
20442482
9.

The effect of nanowire length and diameter on the properties of transparent, conducting nanowire films.

Bergin SM, Chen YH, Rathmell AR, Charbonneau P, Li ZY, Wiley BJ.

Nanoscale. 2012 Mar 21;4(6):1996-2004. doi: 10.1039/c2nr30126a.

PMID:
22349106
10.

In-situ observations of nanoscale effects in germanium nanowire growth with ternary eutectic alloys.

Biswas S, O'Regan C, Morris MA, Holmes JD.

Small. 2015 Jan 7;11(1):103-11. doi: 10.1002/smll.201401240.

PMID:
25196560
11.

Carrier depletion and exciton diffusion in a single ZnO nanowire.

Hwang JS, Donatini F, Pernot J, Thierry R, Ferret P, Dang le S.

Nanotechnology. 2011 Nov 25;22(47):475704. doi: 10.1088/0957-4484/22/47/475704.

PMID:
22056478
12.

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J.

ACS Nano. 2014 Jun 24;8(6):6281-7. doi: 10.1021/nn5017567.

PMID:
24848303
13.

Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.

Tang J, Wang CY, Xiu F, Lang M, Chu LW, Tsai CJ, Chueh YL, Chen LJ, Wang KL.

ACS Nano. 2011 Jul 26;5(7):6008-15. doi: 10.1021/nn2017777.

PMID:
21699197
14.

Controlling heterojunction abruptness in VLS-grown semiconductor nanowires via in situ catalyst alloying.

Perea DE, Li N, Dickerson RM, Misra A, Picraux ST.

Nano Lett. 2011 Aug 10;11(8):3117-22. doi: 10.1021/nl201124y.

PMID:
21696182
15.

Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

Tang J, Wang CY, Hung MH, Jiang X, Chang LT, He L, Liu PH, Yang HJ, Tuan HY, Chen LJ, Wang KL.

ACS Nano. 2012 Jun 26;6(6):5710-7. doi: 10.1021/nn301956m.

PMID:
22658951
16.

Remote doping and Schottky barrier formation in strongly quantum confined single PbSe nanowire field-effect transistors.

Oh SJ, Kim DK, Kagan CR.

ACS Nano. 2012 May 22;6(5):4328-34. doi: 10.1021/nn3009382.

PMID:
22512336
17.

Electronic transport of lateral PtSi/n/n+-Si Schottky diodes.

Li X, Baek IB, Lee S, Jang M.

J Nanosci Nanotechnol. 2012 Jul;12(7):5799-803.

PMID:
22966657
18.

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

Wu D, Jiang Y, Yu Y, Zhang Y, Li G, Zhu Z, Wu C, Wang L, Luo L, Jie J.

Nanotechnology. 2012 Dec 7;23(48):485203. doi: 10.1088/0957-4484/23/48/485203.

PMID:
23138192
19.

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.

Lee SY, Kim TH, Chol NK, Seong HK, Choi HJ, Ahn BG, Lee SK.

J Nanosci Nanotechnol. 2008 Oct;8(10):5042-6.

PMID:
19198387
20.

Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.

Yang WF, Lee SJ, Liang GC, Whang SJ, Kwong DL.

Nanotechnology. 2008 Jun 4;19(22):225203. doi: 10.1088/0957-4484/19/22/225203.

PMID:
21825755
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