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Items: 1 to 20 of 169

1.

Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.

Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.

ACS Nano. 2008 Nov 25;2(11):2219-24. doi: 10.1021/nn800224p.

PMID:
19206386
2.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
3.

Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.

Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM.

Nano Lett. 2009 Jan;9(1):353-9. doi: 10.1021/nl803148q.

PMID:
19072126
4.

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

Sormunen J, Riikonen J, Mattila M, Tiilikainen J, Sopanen M, Lipsanen H.

Nano Lett. 2005 Aug;5(8):1541-3.

PMID:
16089485
5.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
6.

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.

Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.

Small. 2006 Mar;2(3):386-9. No abstract available. Erratum in: Small. 2006 May;2(5):587.

PMID:
17193056
7.

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.

Ohkouchi S, Nakamura Y, Ikeda N, Sugimoto Y, Asakawa K.

Rev Sci Instrum. 2007 Jul;78(7):073908.

PMID:
17672774
8.

Morphology and composition of InAs/GaAs quantum dots.

Heun S, Biasiol G, Grillo V, Carlino E, Sorba L, Golinelli GB, Locatelli A, Mentes TO, Guo FZ.

J Nanosci Nanotechnol. 2007 Jun;7(6):1721-5.

PMID:
17654929
9.

The scaling of the effective band gaps in indium-arsenide quantum dots and wires.

Wang F, Yu H, Jeong S, Pietryga JM, Hollingsworth JA, Gibbons PC, Buhro WE.

ACS Nano. 2008 Sep 23;2(9):1903-13. doi: 10.1021/nn800356z.

PMID:
19206431
10.

Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy.

Wang ZM, Liang B, Sablon KA, Lee J, Mazur YI, Strom NW, Salamo GJ.

Small. 2007 Feb;3(2):235-8. No abstract available.

PMID:
17206731
11.

The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.

Nanotechnology. 2009 Jul 8;20(27):275703. doi: 10.1088/0957-4484/20/27/275703. Epub 2009 Jun 17.

PMID:
19531853
12.

Comparative study of low temperature growth of InAs and InMnAs quantum dots.

Placidi E, Zallo E, Arciprete F, Fanfoni M, Patella F, Balzarotti A.

Nanotechnology. 2011 May 13;22(19):195602. doi: 10.1088/0957-4484/22/19/195602. Epub 2011 Mar 23.

PMID:
21430313
13.

Level structure of InAs quantum dots in two-dimensional assemblies.

Steiner D, Aharoni A, Banin U, Millo O.

Nano Lett. 2006 Oct;6(10):2201-5.

PMID:
17034083
14.

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.

Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.

Nanotechnology. 2012 Mar 9;23(9):095602. doi: 10.1088/0957-4484/23/9/095602. Epub 2012 Feb 10.

PMID:
22322330
15.

Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots.

Yu P, Zhu K, Norman AG, Ferrere S, Frank AJ, Nozik AJ.

J Phys Chem B. 2006 Dec 21;110(50):25451-4.

PMID:
17165992
16.
17.

Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.

Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.

Nano Lett. 2013 Apr 10;13(4):1399-404. doi: 10.1021/nl304157d. Epub 2013 Mar 8.

PMID:
23464836
18.

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.

Usman M, Tasco V, Todaro MT, De Giorgi M, O'Reilly EP, Klimeck G, Passaseo A.

Nanotechnology. 2012 Apr 27;23(16):165202. doi: 10.1088/0957-4484/23/16/165202. Epub 2012 Apr 2.

PMID:
22469563
19.

Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.

Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP.

Nano Lett. 2005 May;5(5):969-73.

PMID:
15884904
20.

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.

Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.

Nat Nanotechnol. 2007 Dec;2(12):761-4. doi: 10.1038/nnano.2007.378. Epub 2007 Nov 25.

PMID:
18654427

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