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Items: 1 to 20 of 89

1.

Theory of defects in one-dimensional systems: application to Al-catalyzed Si nanowires.

Rurali R, Cartoix X.

Nano Lett. 2009 Mar;9(3):975-9. doi: 10.1021/nl802847p.

PMID:
19206213
2.

Conductance, surface traps, and passivation in doped silicon nanowires.

Fernandez-Serra MV, Adessi Ch, Blase X.

Nano Lett. 2006 Dec;6(12):2674-8.

PMID:
17163686
3.

Orthogonal self-assembly of interconnected one-dimensional inorganic and organic nanostructures on the Si(100) surface.

Wang QH, Hersam MC.

J Am Chem Soc. 2008 Oct 1;130(39):12896-7. doi: 10.1021/ja806123j. Epub 2008 Sep 9.

PMID:
18778058
4.

Atomistic design of thermoelectric properties of silicon nanowires.

Vo TT, Williamson AJ, Lordi V, Galli G.

Nano Lett. 2008 Apr;8(4):1111-4. doi: 10.1021/nl073231d. Epub 2008 Feb 27.

PMID:
18302325
5.

Point defect configurations of supersaturated Au atoms inside Si nanowires.

Oh SH, van Benthem K, Molina SI, Borisevich AY, Luo W, Werner P, Zakharov ND, Kumar D, Pantelides ST, Pennycook SJ.

Nano Lett. 2008 Apr;8(4):1016-9. doi: 10.1021/nl072670+. Epub 2008 Mar 13.

PMID:
18336008
6.

Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires.

Wacaser BA, Reuter MC, Khayyat MM, Wen CY, Haight R, Guha S, Ross FM.

Nano Lett. 2009 Sep;9(9):3296-301. doi: 10.1021/nl9015792.

PMID:
19639967
7.

Self-assembled shape- and orientation-controlled synthesis of nanoscale Cu3Si triangles, squares, and wires.

Zhang Z, Wong LM, Ong HG, Wang XJ, Wang JL, Wang SJ, Chen H, Wu T.

Nano Lett. 2008 Oct;8(10):3205-10. doi: 10.1021/nl8015208. Epub 2008 Sep 3.

PMID:
18763831
8.

Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism.

Hyun YJ, Lugstein A, Steinmair M, Bertagnolli E, Pongratz P.

Nanotechnology. 2009 Mar 25;20(12):125606. doi: 10.1088/0957-4484/20/12/125606. Epub 2009 Mar 4.

PMID:
19420475
9.

Structures and energetics of indium-catalyzed silicon nanowires.

Wang ZW, Li ZY.

Nano Lett. 2009 Apr;9(4):1467-71. doi: 10.1021/nl803345u.

PMID:
19260708
10.

Resistance switching in a SiC nanowire/Au nanoparticle network.

Mori Y, Kohno H.

Nanotechnology. 2009 Jul 15;20(28):285705. doi: 10.1088/0957-4484/20/28/285705. Epub 2009 Jun 24.

PMID:
19550009
11.

Computational studies on hydrogen storage in aluminum nitride nanowires/tubes.

Li Y, Zhou Z, Shen P, Zhang SB, Chen Z.

Nanotechnology. 2009 May 27;20(21):215701. doi: 10.1088/0957-4484/20/21/215701. Epub 2009 May 6.

PMID:
19423940
12.

Real space method for the electronic structure of one-dimensional periodic systems.

Han J, Tiago ML, Chan TL, Chelikowsky JR.

J Chem Phys. 2008 Oct 14;129(14):144109. doi: 10.1063/1.2988316.

PMID:
19045136
13.
14.

Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.

Tomioka K, Kobayashi Y, Motohisa J, Hara S, Fukui T.

Nanotechnology. 2009 Apr 8;20(14):145302. doi: 10.1088/0957-4484/20/14/145302. Epub 2009 Mar 17.

PMID:
19420521
15.

Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles.

Petersen EW, Likovich EM, Russell KJ, Narayanamurti V.

Nanotechnology. 2009 Oct 7;20(40):405603. doi: 10.1088/0957-4484/20/40/405603. Epub 2009 Sep 8.

PMID:
19738315
16.

Combination of lightweight elements and nanostructured materials for batteries.

Chen J, Cheng F.

Acc Chem Res. 2009 Jun 16;42(6):713-23. doi: 10.1021/ar800229g.

PMID:
19354236
17.

Electrical transport properties of single undoped and n-type doped InN nanowires.

Richter T, Lüth H, Schäpers T, Meijers R, Jeganathan K, Estévez Hernández S, Calarco R, Marso M.

Nanotechnology. 2009 Oct 7;20(40):405206. doi: 10.1088/0957-4484/20/40/405206. Epub 2009 Sep 8.

PMID:
19738304
18.

The morphology of silicon nanowires grown in the presence of trimethylaluminium.

Oehler F, Gentile P, Baron T, Hertog MD, Rouvière J, Ferret P.

Nanotechnology. 2009 Jun 17;20(24):245602. doi: 10.1088/0957-4484/20/24/245602. Epub 2009 May 27.

PMID:
19471089
19.

The formation of TiO(2) nanowires directly from nanoparticles.

Wang CC, Yu CY, Kei CC, Lee CT, Perng TP.

Nanotechnology. 2009 Jul 15;20(28):285601. doi: 10.1088/0957-4484/20/28/285601. Epub 2009 Jun 24.

PMID:
19550018
20.

Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation.

Kanungo PD, Kögler R, Nguyen-Duc K, Zakharov N, Werner P, Gösele U.

Nanotechnology. 2009 Apr 22;20(16):165706. doi: 10.1088/0957-4484/20/16/165706. Epub 2009 Apr 1.

PMID:
19420579

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