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Items: 1 to 20 of 520

1.
2.

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography.

Byeon KJ, Cho JY, Kim J, Park H, Lee H.

Opt Express. 2012 May 7;20(10):11423-32. doi: 10.1364/OE.20.011423.

PMID:
22565762
3.

Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth.

Huang HW, Lee KY, Huang JK, Lin CH, Lin CF, Yu CC, Kuo HC.

J Nanosci Nanotechnol. 2010 Oct;10(10):6363-8.

PMID:
21137731
4.

Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.

Soh CB, Wang B, Chua SJ, Lin VK, Tan RJ, Tripathy S.

Nanotechnology. 2008 Oct 8;19(40):405303. doi: 10.1088/0957-4484/19/40/405303.

PMID:
21832613
5.

Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes.

Cho HK, Jang J, Choi JH, Choi J, Kim J, Lee JS, Lee B, Choe YH, Lee KD, Kim SH, Lee K, Kim SK, Lee YH.

Opt Express. 2006 Sep 18;14(19):8654-60.

PMID:
19529246
6.

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

Baek KS, Sadasivam KG, Lee YG, Song YH, Jeong T, Kim SH, Kim JK, Kim SH, Jeon SR, Lee JK.

J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8.

PMID:
22103228
7.
8.

The fabrication of a patterned ZnO nanorod array for high brightness LEDs.

Park H, Byeon KJ, Yang KY, Cho JY, Lee H.

Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304.

PMID:
20689168
9.
10.

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography.

Zhou W, Min G, Song Z, Zhang J, Liu Y, Zhang J.

Nanotechnology. 2010 May 21;21(20):205304. doi: 10.1088/0957-4484/21/20/205304.

PMID:
20418605
11.

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Wei T, Ji X, Wu K, Zheng H, Du C, Chen Y, Yan Q, Zhao L, Zhou Z, Wang J, Li J.

Opt Lett. 2014 Jan 15;39(2):379-82. doi: 10.1364/OL.39.000379.

PMID:
24562151
12.

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength.

Wang CY, Chen LY, Chen CP, Cheng YW, Ke MY, Hsieh MY, Wu HM, Peng LH, Huang J.

Opt Express. 2008 Jul 7;16(14):10549-56.

PMID:
18607469
13.

InGaN-based light-emitting diodes with an embedded conical air-voids structure.

Huang YC, Lin CF, Chen SH, Dai JJ, Wang GM, Huang KP, Chen KT, Hsu YH.

Opt Express. 2011 Jan 3;19 Suppl 1:A57-63. doi: 10.1364/OE.19.000A57.

PMID:
21263713
14.
15.

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.

Sheu JK, Chang KH, Tu SJ, Lee ML, Yang CC, Hsu CK, Lai WC.

Opt Express. 2010 Nov 8;18 Suppl 4:A562-7. doi: 10.1364/OE.18.00A562.

PMID:
21165089
16.

Fabrication of imprint stamp by using nanosphere lithography and its utilization to photoluminescence enhancement.

Kim TS, Kim SM, Song SS, Kim EU, Lee K, Kim KS, Jung GY.

J Nanosci Nanotechnol. 2008 Oct;8(10):5275-8.

PMID:
19198437
17.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
18.

InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.

Park MJ, Kwak JS.

J Nanosci Nanotechnol. 2012 May;12(5):4265-8.

PMID:
22852387
19.

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.

Huang HW, Lin CH, Yu CC, Lee BD, Chiu CH, Lai CF, Kuo HC, Leung KM, Lu TC, Wang SC.

Nanotechnology. 2008 May 7;19(18):185301. doi: 10.1088/0957-4484/19/18/185301.

PMID:
21825687
20.

Emission characteristics of photonic crystal light-emitting diodes.

Khokhar AZ, Parsons K, Hubbard G, Watson IM, Rahman F, Macintyre DS, Xiong C, Massoubre D, Gong Z, Gu E, Johnson NP, De La Rue RM, Dawson MD, Abbott SJ, Charlton MD, Tillin M.

Appl Opt. 2011 Jul 1;50(19):3233-9. doi: 10.1364/AO.50.003233.

PMID:
21743523

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