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Items: 1 to 20 of 89

1.

Transport coefficients of InAs nanowires as a function of diameter.

Dayeh SA, Yu ET, Wang D.

Small. 2009 Jan;5(1):77-81. doi: 10.1002/smll.200800969. No abstract available.

PMID:
19040215
2.

Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.

Heun S, Radha B, Ercolani D, Kulkarni GU, Rossi F, Grillo V, Salviati G, Beltram F, Sorba L.

Small. 2010 Sep 6;6(17):1935-41. doi: 10.1002/smll.201000811.

PMID:
20662001
3.

Effects of crystal phase mixing on the electrical properties of InAs nanowires.

Thelander C, Caroff P, Plissard S, Dey AW, Dick KA.

Nano Lett. 2011 Jun 8;11(6):2424-9. doi: 10.1021/nl2008339. Epub 2011 Apr 29.

PMID:
21528899
4.

Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.

Conache G, Gray SM, Ribayrol A, Fröberg LE, Samuelson L, Pettersson H, Montelius L.

Small. 2009 Feb;5(2):203-7. doi: 10.1002/smll.200800794. No abstract available.

PMID:
19058284
5.

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.

Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE.

Small. 2008 Jul;4(7):878-82. doi: 10.1002/smll.200700892. No abstract available.

PMID:
18576282
6.

Excess indium and substrate effects on the growth of InAs nanowires.

Dayeh SA, Yu ET, Wang D.

Small. 2007 Oct;3(10):1683-7. No abstract available.

PMID:
17806087
7.

Diameter-dependent electron mobility of InAs nanowires.

Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A.

Nano Lett. 2009 Jan;9(1):360-5. doi: 10.1021/nl803154m.

PMID:
19143505
8.

Tunable double quantum dots in InAs nanowires defined by local gate electrodes.

Fasth C, Fuhrer A, Björk MT, Samuelson L.

Nano Lett. 2005 Jul;5(7):1487-90.

PMID:
16178262
9.

Scanned probe imaging of quantum dots inside InAs nanowires.

Bleszynski AC, Zwanenburg FA, Westervelt RM, Roest AL, Bakkers EP, Kouwenhoven LP.

Nano Lett. 2007 Sep;7(9):2559-62. Epub 2007 Aug 11.

PMID:
17691848
10.

Shear stress measurements on InAs nanowires by AFM manipulation.

Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.

Small. 2007 Aug;3(8):1398-401. No abstract available.

PMID:
17657751
11.

Evolution of epitaxial InAs nanowires on GaAs 111B.

Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.

Small. 2009 Mar;5(3):366-9. doi: 10.1002/smll.200800690. No abstract available.

PMID:
19152357
12.

Thermal conductance of InAs nanowire composites.

Persson AI, Koh YK, Cahill DG, Samuelson L, Linke H.

Nano Lett. 2009 Dec;9(12):4484-8. doi: 10.1021/nl902809j.

PMID:
19995087
13.

Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.

Tomioka K, Yoshimura M, Fukui T.

Nano Lett. 2013;13(12):5822-6. doi: 10.1021/nl402447h. Epub 2013 Nov 13.

PMID:
24215512
14.

Growth of vertical InAs nanowires on heterostructured substrates.

Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.

Nanotechnology. 2009 Jul 15;20(28):285303. doi: 10.1088/0957-4484/20/28/285303. Epub 2009 Jun 23.

PMID:
19546499
15.

Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.

Svensson J, Anttu N, Vainorius N, Borg BM, Wernersson LE.

Nano Lett. 2013 Apr 10;13(4):1380-5. doi: 10.1021/nl303751d. Epub 2013 Mar 8.

PMID:
23464650
16.

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L.

Nanotechnology. 2010 May 21;21(20):205703. doi: 10.1088/0957-4484/21/20/205703. Epub 2010 Apr 23.

PMID:
20413840
17.

Au-free epitaxial growth of InAs nanowires.

Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.

Nano Lett. 2006 Aug;6(8):1817-21.

PMID:
16895379
18.

Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.

Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.

Nano Lett. 2012 Nov 14;12(11):5744-9. doi: 10.1021/nl303028u. Epub 2012 Oct 5.

PMID:
23030768
19.

Correlating the nanostructure and electronic properties of InAs nanowires.

Schroer MD, Petta JR.

Nano Lett. 2010 May 12;10(5):1618-22. doi: 10.1021/nl904053j.

PMID:
20384350
20.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.

Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

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