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Items: 1 to 20 of 396

1.

Passively mode-locked GaInNAs disk laser operating at 1220 nm.

Rautiainen J, Korpijärvi VM, Puustinen J, Guina M, Okhotnikov O.

Opt Express. 2008 Sep 29;16(20):15964-9.

PMID:
18825234
2.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

Lagatsky AA, Fusari F, Calvez S, Gupta JA, Kisel VE, Kuleshov NV, Brown CT, Dawson MD, Sibbett W.

Opt Lett. 2009 Sep 1;34(17):2587-9. doi: 10.1364/OL.34.002587.

PMID:
19724498
3.

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

Schlosser PJ, Hastie JE, Calvez S, Krysa AB, Dawson MD.

Opt Express. 2009 Nov 23;17(24):21782-7. doi: 10.1364/OE.17.021782.

PMID:
19997421
4.

InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers.

Yao B, Tian Y, Li G, Wang Y.

Opt Express. 2010 Jun 21;18(13):13574-9. doi: 10.1364/OE.18.013574.

PMID:
20588489
5.

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.

Lindberg H, Sadeghi M, Westlund M, Wang S, Larsson A, Strassner M, Marcinkevicius S.

Opt Lett. 2005 Oct 15;30(20):2793-5.

PMID:
16252777
6.

Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4 laser at 1.5-1.6 microm.

Lagatsky AA, Kisel VE, Troshin AE, Tolstik NA, Kuleshov NV, Leonyuk NI, Zhukov AE, Rafailov EU, Sibbett W.

Opt Lett. 2008 Jan 1;33(1):83-5.

PMID:
18157266
7.

Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature.

Khadour A, Bouchoule S, Aubin G, Harmand JC, Decobert J, Oudar JL.

Opt Express. 2010 Sep 13;18(19):19902-13. doi: 10.1364/OE.18.019902.

PMID:
20940881
8.

Comparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers.

Huang JY, Zhuang WZ, Huang WC, Su KW, Hu C, Huang KF, Chen YF.

Opt Express. 2009 Nov 9;17(23):20800-5. doi: 10.1364/OE.17.020800.

PMID:
19997313
9.

Diode-pumped passively mode-locked Yb:YLF laser.

Coluccelli N, Galzerano G, Bonelli L, Di Lieto A, Tonelli M, Laporta P.

Opt Express. 2008 Mar 3;16(5):2922-7.

PMID:
18542377
10.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.

Fedorova KA, Cataluna MA, Krestnikov I, Livshits D, Rafailov EU.

Opt Express. 2010 Aug 30;18(18):19438-43. doi: 10.1364/OE.18.019438.

PMID:
20940839
11.
12.

Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm.

Härkönen A, Paajaste J, Suomalainen S, Alanko JP, Grebing C, Koskinen R, Steinmeyer G, Guina M.

Opt Lett. 2010 Dec 15;35(24):4090-2. doi: 10.1364/OL.35.004090.

PMID:
21165099
13.

Passively mode-locked 914-nm Nd:YVO4 laser.

Schlatter A, Krainer L, Golling M, Paschotta R, Ebling D, Keller U.

Opt Lett. 2005 Jan 1;30(1):44-6.

PMID:
15648632
14.
15.

Dark pulse quantum dot diode laser.

Feng M, Silverman KL, Mirin RP, Cundiff ST.

Opt Express. 2010 Jun 21;18(13):13385-95. doi: 10.1364/OE.18.013385.

PMID:
20588468
16.

2.7 W tunable orange-red GaInNAs semiconductor disk laser.

Rautiainen J, Härkönen A, Korpijärvi VM, Tuomisto P, Guina M, Okhotnikov OG.

Opt Express. 2007 Dec 24;15(26):18345-50.

PMID:
19551132
17.

Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm.

Xu C, Wei Z, Zhang Y, Li D, Zhang Z, Wang X, Wang S, Eichler HJ, Zhang C, Gao C.

Opt Lett. 2009 Aug 1;34(15):2324-6.

PMID:
19649085
18.

Wideband-tuneable, nanotube mode-locked, fibre laser.

Wang F, Rozhin AG, Scardaci V, Sun Z, Hennrich F, White IH, Milne WI, Ferrari AC.

Nat Nanotechnol. 2008 Dec;3(12):738-42. doi: 10.1038/nnano.2008.312. Epub 2008 Nov 2.

PMID:
19057594
19.

Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm.

Blandin P, Druon F, Balembois F, Georges P, Lévêque-Fort S, Fontaine-Aupart MP.

Opt Lett. 2006 Jan 15;31(2):214-6.

PMID:
16441034
20.

Mode-locked Tm,Ho:YAP laser around 2.1 μm.

Yang KJ, Heinecke DC, Kölbl C, Dekorsy T, Zhao SZ, Zheng LH, Xu J, Zhao GJ.

Opt Express. 2013 Jan 28;21(2):1574-80. doi: 10.1364/OE.21.001574.

PMID:
23389141

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