Similar articles for PMID: 18811210

Year	Number of Results
2004	1
2005	3
2006	2
2007	8
2008	3
2009	5
2010	4
2011	8
2012	12
2013	6
2014	7
2015	6
2016	4
2017	12
2018	10
2019	11
2020	3
2022	1
2024	0

1

Transients in the formation of nanowire heterostructures.

Fröberg LE, Wacaser BA, Wagner JB, Jeppesen S, Ohlsson BJ, Deppert K, Samuelson L. Fröberg LE, et al. Nano Lett. 2008 Nov;8(11):3815-8. doi: 10.1021/nl802149v. Epub 2008 Sep 24. Nano Lett. 2008. PMID: 18811210

2

Growth dynamics of InAs/InP nanowire heterostructures by Au-assisted chemical beam epitaxy.

Zannier V, Rossi F, Ercolani D, Sorba L. Zannier V, et al. Nanotechnology. 2019 Mar 1;30(9):094003. doi: 10.1088/1361-6528/aaf7ab. Epub 2018 Dec 11. Nanotechnology. 2019. PMID: 30537697

3

Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

Zannier V, Rossi F, Dubrovskii VG, Ercolani D, Battiato S, Sorba L. Zannier V, et al. Nano Lett. 2018 Jan 10;18(1):167-174. doi: 10.1021/acs.nanolett.7b03742. Epub 2017 Dec 5. Nano Lett. 2018. PMID: 29186660

4

Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.

Haapamaki CM, Lapierre RR. Haapamaki CM, et al. Nanotechnology. 2011 Aug 19;22(33):335602. doi: 10.1088/0957-4484/22/33/335602. Epub 2011 Jul 25. Nanotechnology. 2011. PMID: 21788682

5

Control and understanding of kink formation in InAs-InP heterostructure nanowires.

Fahlvik Svensson S, Jeppesen S, Thelander C, Samuelson L, Linke H, Dick KA. Fahlvik Svensson S, et al. Nanotechnology. 2013 Aug 30;24(34):345601. doi: 10.1088/0957-4484/24/34/345601. Epub 2013 Jul 30. Nanotechnology. 2013. PMID: 23900037

6

Kinetic modeling of interfacial abruptness in axial nanowire heterostructures.

Leshchenko ED, Dubrovskii VG. Leshchenko ED, et al. Nanotechnology. 2022 Nov 25;34(6). doi: 10.1088/1361-6528/aca1c9. Nanotechnology. 2022. PMID: 36356307

7

Growth of straight InAs-on-GaAs nanowire heterostructures.

Messing ME, Wong-Leung J, Zanolli Z, Joyce HJ, Tan HH, Gao Q, Wallenberg LR, Johansson J, Jagadish C. Messing ME, et al. Nano Lett. 2011 Sep 14;11(9):3899-905. doi: 10.1021/nl202051w. Epub 2011 Jul 28. Nano Lett. 2011. PMID: 21786786

8

Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange.

Zannier V, Ercolani D, Gomes UP, David J, Gemmi M, Dubrovskii VG, Sorba L. Zannier V, et al. Nano Lett. 2016 Nov 9;16(11):7183-7190. doi: 10.1021/acs.nanolett.6b03524. Epub 2016 Oct 25. Nano Lett. 2016. PMID: 27760298

9

Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.

Zhang G, Tateno K, Sogawa T, Gotoh H. Zhang G, et al. Nanotechnology. 2018 Apr 2;29(15):155202. doi: 10.1088/1361-6528/aaab17. Nanotechnology. 2018. PMID: 29376842

10

Self-Seeded Axio-Radial InAs-InAs_1-xP_x Nanowire Heterostructures beyond "Common" VLS Growth.

Mandl B, Keplinger M, Messing ME, Kriegner D, Wallenberg R, Samuelson L, Bauer G, Stangl J, Holý V, Deppert K. Mandl B, et al. Nano Lett. 2018 Jan 10;18(1):144-151. doi: 10.1021/acs.nanolett.7b03668. Epub 2017 Dec 22. Nano Lett. 2018. PMID: 29257691

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