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Items: 1 to 20 of 52

1.

High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy.

Tan KH, Yoon SF, Loke WK, Wicaksono S, Ng TK, Lew KL, Stöhr A, Fedderwitz S, Weiss M, Jäger D, Saadsaoud N, Dogheche E, Decoster D, Chazelas J.

Opt Express. 2008 May 26;16(11):7720-5.

PMID:
18545482
2.

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

Natrella M, Rouvalis E, Liu CP, Liu H, Renaud CC, Seeds AJ.

Opt Express. 2012 Aug 13;20(17):19279-88. doi: 10.1364/OE.20.019279.

PMID:
23038569
3.

GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

Chuang LC, Sedgwick FG, Chen R, Ko WS, Moewe M, Ng KW, Tran TT, Chang-Hasnain C.

Nano Lett. 2011 Feb 9;11(2):385-90. doi: 10.1021/nl102988w. Epub 2010 Dec 21.

PMID:
21174451
4.

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

Sheng Z, Liu L, Brouckaert J, He S, Van Thourhout D.

Opt Express. 2010 Jan 18;18(2):1756-61. doi: 10.1364/OE.18.001756.

PMID:
20174003
5.

Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.

Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ.

Nano Lett. 2010 Apr 14;10(4):1512-6. doi: 10.1021/nl100217k.

PMID:
20356102
6.

Manganese-induced growth of GaAs nanowires.

Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.

Nano Lett. 2006 Sep;6(9):2130-4.

PMID:
16968038
7.

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

Sadowski J, Domagala JZ, Mathieu R, Kovacs A, Dłużewski P.

J Phys Condens Matter. 2013 May 15;25(19):196005. doi: 10.1088/0953-8984/25/19/196005. Epub 2013 Apr 19.

PMID:
23603378
8.

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.

Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.

Nano Lett. 2007 Sep;7(9):2724-8. Epub 2007 Aug 25.

PMID:
17718585
9.

GaAs-Fe₃Si core-shell nanowires: nanobar magnets.

Hilse M, Herfort J, Jenichen B, Trampert A, Hanke M, Schaaf P, Geelhaar L, Riechert H.

Nano Lett. 2013;13(12):6203-9. doi: 10.1021/nl4035994. Epub 2013 Nov 27.

PMID:
24274677
10.

InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination.

Zhao Y, Zhang D, Qin L, Tang Q, Wu RH, Liu J, Zhang Y, Zhang H, Yuan X, Liu W.

Opt Express. 2011 Apr 25;19(9):8546-56. doi: 10.1364/OE.19.008546.

PMID:
21643105
11.

Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A.

Opt Express. 2008 Jun 23;16(13):9365-71.

PMID:
18575500
12.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
13.

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.

Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, Kaschel M, Gollhofer M, Körner R, Zhang W, Kasper E, Schulze J.

Opt Express. 2014 Jan 13;22(1):839-46. doi: 10.1364/OE.22.000839.

PMID:
24515043
14.

Mutual passivation of electrically active and isovalent impurities.

Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF.

Nat Mater. 2002 Nov;1(3):185-9.

PMID:
12618808
15.

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.

Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.

Nano Lett. 2007 Apr;7(4):921-6. Epub 2007 Mar 3.

PMID:
17335270
16.

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED.

Akaogi T, Tsuda K, Terauchi M, Tanaka M.

J Electron Microsc (Tokyo). 2004;53(1):11-9.

PMID:
15077894
17.

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.

Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.

J Nanosci Nanotechnol. 2001 Dec;1(4):389-92.

PMID:
12914079
18.

Enhanced responsivity of photodetectors realized via impact ionization.

Yu J, Shan CX, Qiao Q, Xie XH, Wang SP, Zhang ZZ, Shen DZ.

Sensors (Basel). 2012;12(2):1280-7. doi: 10.3390/s120201280. Epub 2012 Jan 31.

19.

Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping.

Xie X, Zhang Z, Li B, Wang S, Jiang M, Shan C, Zhao D, Chen H, Shen D.

Opt Express. 2014 Jan 13;22(1):246-53. doi: 10.1364/OE.22.000246.

PMID:
24514985
20.

Self-directed growth of AlGaAs core-shell nanowires for visible light applications.

Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.

Nano Lett. 2007 Sep;7(9):2584-9. Epub 2007 Aug 16.

PMID:
17696557

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