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Items: 1 to 20 of 126

1.

Photoluminescence spectroscopy of the molecular biexciton in vertically stacked InAs-GaAs quantum dot pairs.

Scheibner M, Ponomarev IV, Stinaff EA, Doty MF, Bracker AS, Hellberg CS, Reinecke TL, Gammon D.

Phys Rev Lett. 2007 Nov 9;99(19):197402. Epub 2007 Nov 8.

PMID:
18233111
2.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.

Zieliński M.

J Phys Condens Matter. 2013 Nov 20;25(46):465301. doi: 10.1088/0953-8984/25/46/465301. Epub 2013 Oct 15.

PMID:
24129261
3.

Electric field induced removal of the biexciton binding energy in a single quantum dot.

Reimer ME, van Kouwen MP, Hidma AW, van Weert MH, Bakkers EP, Kouwenhoven LP, Zwiller V.

Nano Lett. 2011 Feb 9;11(2):645-50. doi: 10.1021/nl1037424. Epub 2011 Jan 12.

PMID:
21226507
4.

Near-field optical mapping of exciton wave functions in a GaAs quantum dot.

Matsuda K, Saiki T, Nomura S, Mihara M, Aoyagi Y, Nair S, Takagahara T.

Phys Rev Lett. 2003 Oct 24;91(17):177401. Epub 2003 Oct 20.

PMID:
14611375
5.

Vertically stacked quantum dot pairs fabricated by nanohole filling.

Sonnenberg D, Küster A, Graf A, Heyn Ch, Hansen W.

Nanotechnology. 2014 May 30;25(21):215602. doi: 10.1088/0957-4484/25/21/215602. Epub 2014 May 2.

PMID:
24784358
6.

Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots.

Chan CH, Huang YS, Wang JS, Tiong KK.

Opt Express. 2007 Feb 19;15(4):1898-906.

PMID:
19532428
7.

Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots.

Laurent S, Eble B, Krebs O, Lemaître A, Urbaszek B, Marie X, Amand T, Voisin P.

Phys Rev Lett. 2005 Apr 15;94(14):147401. Epub 2005 Apr 12.

PMID:
15904109
8.

Electrically tunable g factors in quantum dot molecular spin states.

Doty MF, Scheibner M, Ponomarev IV, Stinaff EA, Bracker AS, Korenev VL, Reinecke TL, Gammon D.

Phys Rev Lett. 2006 Nov 10;97(19):197202. Epub 2006 Nov 10.

PMID:
17155656
9.

Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots.

Sheng W, Leburton JP.

Phys Rev Lett. 2002 Apr 22;88(16):167401. Epub 2002 Apr 9.

PMID:
11955264
10.

Optical measurement and modeling of interactions between two hole spins or two electron spins in coupled InAs quantum dots.

Greilich A, Bădescu ŞC, Kim D, Bracker AS, Gammon D.

Phys Rev Lett. 2013 Mar 15;110(11):117402. Epub 2013 Mar 12.

PMID:
25166576
11.

Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.

Kammerer C, Cassabois G, Voisin C, Delalande C, Roussignol P, Gérard JM.

Phys Rev Lett. 2001 Nov 12;87(20):207401. Epub 2001 Oct 26.

PMID:
11690509
12.
13.

Measurement and modification of biexciton-exciton time correlations.

Huber T, Predojević A, Zoubi H, Jayakumar H, Solomon GS, Weihs G.

Opt Express. 2013 Apr 22;21(8):9890-8. doi: 10.1364/OE.21.009890.

PMID:
23609694
14.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784
15.

Hole spin relaxation in InAs/GaAs quantum dot molecules.

Segarra C, Climente JI, Rajadell F, Planelles J.

J Phys Condens Matter. 2015 Oct 21;27(41):415301. doi: 10.1088/0953-8984/27/41/415301. Epub 2015 Sep 29.

PMID:
26418483
16.

Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.

Morales-Cortés H, Mejía-García C, Méndez-García VH, Vázquez-Cortés D, Rojas-Ramírez JS, Contreras-Guerrero R, Ramírez-López M, Martínez-Velis I, López-López M.

Nanotechnology. 2010 Apr 2;21(13):134012. doi: 10.1088/0957-4484/21/13/134012. Epub 2010 Mar 8.

PMID:
20208110
17.

Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating.

Muñoz-Matutano G, Rivas D, Ricchiuti AL, Barrera D, Fernández-Pousa CR, Martínez-Pastor J, Seravalli L, Trevisi G, Frigeri P, Sales S.

Nanotechnology. 2014 Jan 24;25(3):035204.

PMID:
24356330
18.

Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures.

Fillipov S, Puttisong Y, Huang Y, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

ACS Nano. 2015 Jun 23;9(6):5741-9. doi: 10.1021/acsnano.5b01387. Epub 2015 May 15.

19.

Optical studies of individual InAs quantum dots in GaAs: few-particle effects

Landin L, Miller MS, Pistol M, Pryor CE, Samuelson L.

Science. 1998 Apr 10;280(5361):262-4.

20.

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.

Tommila J, Strelow C, Schramm A, Hakkarainen TV, Dumitrescu M, Kipp T, Guina M.

Nanoscale Res Lett. 2012 Jun 19;7(1):313. doi: 10.1186/1556-276X-7-313.

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