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Items: 1 to 20 of 168

1.

1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector.

Lee MK, Chu CH, Wang YH, Sze SM.

Opt Lett. 2001 Feb 1;26(3):160-2.

PMID:
18033536
2.

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.

Goykhman I, Sassi U, Desiatov B, Mazurski N, Milana S, de Fazio D, Eiden A, Khurgin J, Shappir J, Levy U, Ferrari AC.

Nano Lett. 2016 May 11;16(5):3005-13. doi: 10.1021/acs.nanolett.5b05216. Epub 2016 Apr 22.

3.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Vabbina P, Choudhary N, Chowdhury AA, Sinha R, Karabiyik M, Das S, Choi W, Pala N.

ACS Appl Mater Interfaces. 2015 Jul 22;7(28):15206-13. doi: 10.1021/acsami.5b00887. Epub 2015 Jul 13.

PMID:
26148017
4.

Laser patterning of epitaxial graphene for Schottky junction photodetectors.

Singh RS, Nalla V, Chen W, Wee AT, Ji W.

ACS Nano. 2011 Jul 26;5(7):5969-75. doi: 10.1021/nn201757j. Epub 2011 Jun 29.

PMID:
21702443
5.

Graphene Quantum Dot-Sensitized ZnO Nanorod/Polymer Schottky Junction UV Detector with Superior External Quantum Efficiency, Detectivity, and Responsivity.

Dhar S, Majumder T, Mondal SP.

ACS Appl Mater Interfaces. 2016 Nov 23;8(46):31822-31831. Epub 2016 Nov 9.

PMID:
27800675
6.

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical van der Waals Heterostructure.

Zhang K, Fang X, Wang Y, Wan Y, Song Q, Zhai W, Li Y, Ran G, Ye Y, Dai L.

ACS Appl Mater Interfaces. 2017 Feb 15;9(6):5392-5398. doi: 10.1021/acsami.6b14483. Epub 2017 Feb 6.

PMID:
28111947
7.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W.

Small. 2015 Feb 25;11(8):936-42. doi: 10.1002/smll.201402312. Epub 2014 Oct 31.

PMID:
25363206
8.

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

Chen Y, Cheng T, Cheng C, Wang C, Chen C, Wei C, Chen Y.

Opt Express. 2010 Jan 4;18(1):56-62. doi: 10.1364/OE.18.000056.

PMID:
20173822
9.

Ultrahigh responsivity visible and infrared detection using silicon nanowire phototransistors.

Zhang A, Kim H, Cheng J, Lo YH.

Nano Lett. 2010 Jun 9;10(6):2117-20. doi: 10.1021/nl1006432.

PMID:
20469840
10.

A hybrid AlGaInAs-silicon evanescent waveguide photodetector.

Park H, Fang AW, Jones R, Cohen O, Raday O, Sysak MN, Paniccia MJ, Bowers JE.

Opt Express. 2007 May 14;15(10):6044-52.

PMID:
19546908
11.

P3HT-graphene bilayer electrode for Schottky junction photodetectors.

Aydın H, Kalkan SB, Varlikli C, Çelebi C.

Nanotechnology. 2018 Apr 6;29(14):145502. doi: 10.1088/1361-6528/aaaaf5.

PMID:
29447121
12.

Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots.

Xu X, Maruizumi T, Shiraki Y.

Opt Express. 2014 Feb 24;22(4):3902-10. doi: 10.1364/OE.22.003902.

PMID:
24663710
13.

Near-ultraviolet-sensitive graphene/porous silicon photodetectors.

Kim J, Joo SS, Lee KW, Kim JH, Shin DH, Kim S, Choi SH.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):20880-6. doi: 10.1021/am5053812. Epub 2014 Nov 19.

PMID:
25384018
14.

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

Tan D, Zhang W, Wang X, Koirala S, Miyauchi Y, Matsuda K.

Nanoscale. 2017 Aug 31;9(34):12425-12431. doi: 10.1039/c7nr03040a.

PMID:
28809426
15.

Single InAs nanowire room-temperature near-infrared photodetectors.

Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W.

ACS Nano. 2014 Apr 22;8(4):3628-35. doi: 10.1021/nn500201g. Epub 2014 Mar 7.

PMID:
24592971
16.

Characterization of Carbon Nanotube Based Infrared Photodetector Using Digital Microscopy.

Chen L, Yu M, Xi N, Song B, Yang Y, Zhou Z, Sun Z, Cheng Y, Wu Y, Hou C, Dong L.

J Nanosci Nanotechnol. 2017 Jan;17(1):482-87.

PMID:
29624327
17.

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors.

Huang Z, Mao Y, Lin G, Yi X, Chang A, Li C, Chen S, Huang W, Wang J.

Opt Express. 2018 Mar 5;26(5):5827-5834. doi: 10.1364/OE.26.005827.

PMID:
29529784
18.
19.

Quantum dot-doped porous silicon metal-semiconductor metal photodetector.

Chou CM, Cho HT, Hsiao VK, Yong KT, Law WC.

Nanoscale Res Lett. 2012 Jun 6;7(1):291. doi: 10.1186/1556-276X-7-291.

20.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

Luongo G, Giubileo F, Genovese L, Iemmo L, Martucciello N, Di Bartolomeo A.

Nanomaterials (Basel). 2017 Jun 27;7(7). pii: E158. doi: 10.3390/nano7070158.

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