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Items: 1 to 20 of 112

1.

Monovacancy and interstitial migration in ion-implanted silicon.

Coleman PG, Burrows CP.

Phys Rev Lett. 2007 Jun 29;98(26):265502. Epub 2007 Jun 29. Erratum in: Phys Rev Lett. 2007 Nov 2;99(18):189902.

PMID:
17678103
2.

Formation of thermal vacancies in highly As and P doped Si.

Ranki V, Saarinen K.

Phys Rev Lett. 2004 Dec 17;93(25):255502. Epub 2004 Dec 13.

PMID:
15697905
3.

Diffusivity of the double negatively charged mono-vacancy in silicon.

Bhoodoo C, Vines L, Monakhov E, Gunnar Svensson B.

J Phys Condens Matter. 2017 May 24;29(20):205501. doi: 10.1088/1361-648X/aa693f. Epub 2017 Mar 27.

PMID:
28344189
4.

Fluorine in silicon: diffusion, trapping, and precipitation.

Pi XD, Burrows CP, Coleman PG.

Phys Rev Lett. 2003 Apr 18;90(15):155901. Epub 2003 Apr 17.

PMID:
12732052
5.

Activation energies for the formation and evaporation of vacancy clusters in silicon.

Abdulmalik DA, Coleman PG.

Phys Rev Lett. 2008 Mar 7;100(9):095503. Epub 2008 Mar 5.

PMID:
18352722
6.

Positron annihilation on defects in silicon irradiated with 15 MeV protons.

Arutyunov NY, Elsayed M, Krause-Rehberg R, Emtsev VV, Oganesyan GA, Kozlovski VV.

J Phys Condens Matter. 2013 Jan 23;25(3):035801. doi: 10.1088/0953-8984/25/3/035801. Epub 2012 Dec 10.

PMID:
23221281
7.

The contribution made by lattice vacancies to the Wigner effect in radiation-damaged graphite.

Latham CD, Heggie MI, Alatalo M, Oberg S, Briddon PR.

J Phys Condens Matter. 2013 Apr 3;25(13):135403. doi: 10.1088/0953-8984/25/13/135403. Epub 2013 Mar 7.

PMID:
23470497
8.

Defects in electron irradiated boron-doped diamonds investigated by positron annihilation and optical absorption.

Dannefaer S, Iakoubovskii K.

J Phys Condens Matter. 2008 Jun 11;20(23):235225. doi: 10.1088/0953-8984/20/23/235225. Epub 2008 May 9.

PMID:
21694316
9.

Formation of vacancy-impurity complexes by kinetic processes in highly As-doped Si.

Ranki V, Nissilä J, Saarinen K.

Phys Rev Lett. 2002 Mar 11;88(10):105506. Epub 2002 Feb 25.

PMID:
11909372
10.

Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb.

Kujala J, Südkamp T, Slotte J, Makkonen I, Tuomisto F, Bracht H.

J Phys Condens Matter. 2016 Aug 24;28(33):335801. doi: 10.1088/0953-8984/28/33/335801. Epub 2016 Jun 28.

PMID:
27351231
11.

Characterization of implantation induced defects in Si-implanted SiO2 film.

Hao X, Zhou C, Yu R, Wang B, Wei L.

J Nanosci Nanotechnol. 2008 Mar;8(3):1350-4.

PMID:
18468152
12.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si.

Wallace JB, Aji LB, Martin AA, Shin SJ, Shao L, Kucheyev SO.

Sci Rep. 2017 Jan 6;7:39754. doi: 10.1038/srep39754.

13.

Quantitative TEM of point defects in Si

Eaglesham DJ, Venezia VC, Gossmann HJ, Agarwal A.

J Electron Microsc (Tokyo). 2000;49(2):293-8.

PMID:
11108052
14.

Evolution of photoluminescence mechanisms of Si(+)-implanted SiO2 films with thermal annealing.

Ding L, Chen TP, Liu Y, Ng CY, Yang M, Wong JI, Zhu FR, Tan MC, Fung S, Chen XD, Huang Y.

J Nanosci Nanotechnol. 2008 Jul;8(7):3555-60.

PMID:
19051910
15.

Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.

Poudel PR, Paramo JA, Poudel PP, Diercks DR, Strzhemechny YM, Rout B, McDaniel FD.

J Nanosci Nanotechnol. 2012 Mar;12(3):1835-42.

PMID:
22754988
16.

Evidence for a vacancy-phosphorus-oxygen complex in silicon.

Dannefaer S, Suppes G, Avalos V.

J Phys Condens Matter. 2009 Jan 7;21(1):015802. doi: 10.1088/0953-8984/21/1/015802. Epub 2008 Dec 2.

PMID:
21817230
17.

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy.

Rummukainen M, Makkonen I, Ranki V, Puska MJ, Saarinen K, Gossmann HJ.

Phys Rev Lett. 2005 Apr 29;94(16):165501. Epub 2005 Apr 25.

PMID:
15904239
18.

[Photoluminescence from Si and Er dual-implanted Si-rich thermal oxidation SiO2/Si thin films].

Xiao ZS, Xu F, Zhang TH, Cheng GA, Gu LL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2002 Aug;22(4):538-41. Chinese.

PMID:
12938357
19.

Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon.

Moutanabbir O, Terreault B.

J Chem Phys. 2004 Oct 22;121(16):7973-86.

PMID:
15485260
20.

Examination of electrostatic potential distribution across an implanted p-n junction by electron holography.

Wang Z, Sasaki K, Kato N, Urata K, Hirayama T, Saka H.

J Electron Microsc (Tokyo). 2001;50(6):479-84.

PMID:
11918413

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