Similar articles for PMID: 16834431

Year	Number of Results
2002	1
2005	3
2006	7
2007	8
2008	14
2009	7
2010	12
2011	11
2012	20
2013	18
2014	27
2015	27
2016	20
2017	22
2018	11
2019	24
2020	49
2021	80
2022	57
2023	20
2024	0

1

Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.

Li Y, Xiang J, Qian F, Gradecak S, Wu Y, Yan H, Blom DA, Lieber CM. Li Y, et al. Nano Lett. 2006 Jul;6(7):1468-73. doi: 10.1021/nl060849z. Nano Lett. 2006. PMID: 16834431

2

Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.

Qian F, Brewster M, Lim SK, Ling Y, Greene C, Laboutin O, Johnson JW, Gradečak S, Cao Y, Li Y. Qian F, et al. Nano Lett. 2012 Jun 13;12(6):3344-50. doi: 10.1021/nl301690e. Epub 2012 May 21. Nano Lett. 2012. PMID: 22594533

3

Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.

Greco G, Fiorenza P, Iucolano F, Severino A, Giannazzo F, Roccaforte F. Greco G, et al. ACS Appl Mater Interfaces. 2017 Oct 11;9(40):35383-35390. doi: 10.1021/acsami.7b08935. Epub 2017 Sep 26. ACS Appl Mater Interfaces. 2017. PMID: 28920438

4

Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

Qian F, Gradecak S, Li Y, Wen CY, Lieber CM. Qian F, et al. Nano Lett. 2005 Nov;5(11):2287-91. doi: 10.1021/nl051689e. Nano Lett. 2005. PMID: 16277469

5

Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.

Alifragis Y, Volosirakis A, Chaniotakis NA, Konstantinidis G, Adikimenakis A, Georgakilas A. Alifragis Y, et al. Biosens Bioelectron. 2007 Jun 15;22(12):2796-801. doi: 10.1016/j.bios.2006.10.010. Epub 2006 Nov 13. Biosens Bioelectron. 2007. PMID: 17098415

6

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

Mao LF, Ning HS, Wang JY. Mao LF, et al. PLoS One. 2015 Jun 3;10(6):e0128438. doi: 10.1371/journal.pone.0128438. eCollection 2015. PLoS One. 2015. PMID: 26039589 Free PMC article.

7

a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

Song W, Wang R, Wang X, Guo D, Chen H, Zhu Y, Liu L, Zhou Y, Sun Q, Wang L, Li S. Song W, et al. ACS Appl Mater Interfaces. 2017 Nov 29;9(47):41435-41442. doi: 10.1021/acsami.7b12986. Epub 2017 Nov 15. ACS Appl Mater Interfaces. 2017. PMID: 29111660

8

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

Liao SY, Lu CC, Chang T, Huang CF, Cheng CH, Chang LB. Liao SY, et al. J Nanosci Nanotechnol. 2014 Aug;14(8):6243-6. doi: 10.1166/jnn.2014.8726. J Nanosci Nanotechnol. 2014. PMID: 25936096

9

Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

Abidin MS, Hashim AM, Sharifabad ME, Rahman SF, Sadoh T. Abidin MS, et al. Sensors (Basel). 2011;11(3):3067-77. doi: 10.3390/s110303067. Epub 2011 Mar 9. Sensors (Basel). 2011. PMID: 22163786 Free PMC article.

10

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.

Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G. Tajalli A, et al. Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101. Micromachines (Basel). 2020. PMID: 31963553 Free PMC article.

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