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Items: 1 to 20 of 148

1.

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111).

Ristić J, Calleja E, Trampert A, Fernández-Garrido S, Rivera C, Jahn U, Ploog KH.

Phys Rev Lett. 2005 Apr 15;94(14):146102. Epub 2005 Apr 12.

PMID:
15904080
2.

Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns.

Kishino K, Ishizawa S.

Nanotechnology. 2015 Jun 5;26(22):225602. doi: 10.1088/0957-4484/26/22/225602. Epub 2015 May 12.

PMID:
25965011
3.

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

Hayashi H, Konno Y, Kishino K.

Nanotechnology. 2016 Feb 5;27(5):055302. doi: 10.1088/0957-4484/27/5/055302. Epub 2015 Dec 16.

PMID:
26674458
4.

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Chang HM, Lai WC, Chen WS, Chang SJ.

Opt Express. 2015 Apr 6;23(7):A337-45. doi: 10.1364/OE.23.00A337.

PMID:
25968799
5.

Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence.

Sarwar AT, May BJ, Chisholm MF, Duscher GJ, Myers RC.

Nanoscale. 2016 Apr 21;8(15):8024-32. doi: 10.1039/c6nr00132g.

PMID:
27019949
6.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.

Hu H, Zhou S, Liu X, Gao Y, Gui C, Liu S.

Sci Rep. 2017 Mar 15;7:44627. doi: 10.1038/srep44627.

7.

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices.

Kladko V, Kuchuk A, Lytvyn P, Yefanov O, Safriuk N, Belyaev A, Mazur YI, Decuir EA Jr, Ware ME, Salamo GJ.

Nanoscale Res Lett. 2012 Jun 6;7(1):289. doi: 10.1186/1556-276X-7-289.

8.

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control.

Niu L, Hao Z, Hu J, Hu Y, Wang L, Luo Y.

Nanoscale Res Lett. 2011 Dec 2;6(1):611. doi: 10.1186/1556-276X-6-611.

9.

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.

Jacopin G, Rigutti L, Bellei S, Lavenus P, Julien FH, Davydov AV, Tsvetkov D, Bertness KA, Sanford NA, Schlager JB, Tchernycheva M.

Nanotechnology. 2012 Aug 17;23(32):325701. doi: 10.1088/0957-4484/23/32/325701. Epub 2012 Jul 17.

PMID:
22802219
10.

Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition.

Sun HH, Guo FY, Li DY, Wang L, Wang DB, Zhao LC.

Nanoscale Res Lett. 2012 Nov 26;7(1):649. doi: 10.1186/1556-276X-7-649.

11.

The structural properties of GaN/AlN core-shell nanocolumn heterostructures.

Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B.

Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16.

PMID:
20844326
12.

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Liu XY, Zhao SX, Zhang LQ, Huang HF, Shi JS, Zhang CM, Lu HL, Wang PF, Zhang DW.

Nanoscale Res Lett. 2015 Mar 4;10:109. doi: 10.1186/s11671-015-0802-x. eCollection 2015.

13.

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.

He C, Qin Z, Xu F, Zhang L, Wang J, Hou M, Zhang S, Wang X, Ge W, Shen B.

Sci Rep. 2016 Apr 26;6:25124. doi: 10.1038/srep25124.

14.

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.

Bougerol C, Songmuang R, Camacho D, Niquet YM, Mata R, Cros A, Daudin B.

Nanotechnology. 2009 Jul 22;20(29):295706. doi: 10.1088/0957-4484/20/29/295706. Epub 2009 Jul 1.

PMID:
19567953
15.

Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy.

Tanaka S, Aoyama K, Ichihashi M, Arai S, Honda Y, Sawaki N.

J Electron Microsc (Tokyo). 2007 Aug;56(4):141-4. Epub 2007 Oct 25.

PMID:
17962377
16.

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H.

Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 6.

PMID:
25656795
17.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

Shiu GY, Chen KT, Fan FH, Huang KP, Hsu WJ, Dai JJ, Lai CF, Lin CF.

Sci Rep. 2016 Jul 1;6:29138. doi: 10.1038/srep29138.

18.

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

Lee M, Mikulik D, Yang M, Park S.

Sci Rep. 2017 Aug 17;7(1):8587. doi: 10.1038/s41598-017-08905-y.

19.

Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.

Kuchuk AV, Kladko VP, Petrenko TL, Bryksa VP, Belyaev AE, Mazur YI, Ware ME, DeCuir EA Jr, Salamo GJ.

Nanotechnology. 2014 Jun 20;25(24):245602. doi: 10.1088/0957-4484/25/24/245602. Epub 2014 May 28.

PMID:
24869600
20.

High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots.

Mexis M, Sergent S, Guillet T, Brimont C, Bretagnon T, Gil B, Semond F, Leroux M, Néel D, David S, Chécoury X, Boucaud P.

Opt Lett. 2011 Jun 15;36(12):2203-5. doi: 10.1364/OL.36.002203.

PMID:
21685967

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