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Items: 1 to 20 of 140

1.

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.

Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M, Al-Khafaji M, David JP, Cullis AG, Hill G, Clark JC.

Phys Rev Lett. 2000 Jan 24;84(4):733-6.

PMID:
11017359
2.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.

Zieliński M.

J Phys Condens Matter. 2013 Nov 20;25(46):465301. doi: 10.1088/0953-8984/25/46/465301. Epub 2013 Oct 15.

PMID:
24129261
3.

Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots.

Duque CA, Porras-Montenegro N, Barticevic Z, Pacheco M, Oliveira LE.

J Phys Condens Matter. 2006 Feb 15;18(6):1877-84. doi: 10.1088/0953-8984/18/6/005. Epub 2006 Jan 24.

PMID:
21697562
4.

Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots.

Sheng W, Leburton JP.

Phys Rev Lett. 2002 Apr 22;88(16):167401. Epub 2002 Apr 9.

PMID:
11955264
5.

Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots.

Laurent S, Eble B, Krebs O, Lemaître A, Urbaszek B, Marie X, Amand T, Voisin P.

Phys Rev Lett. 2005 Apr 15;94(14):147401. Epub 2005 Apr 12.

PMID:
15904109
6.

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations.

Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G.

Nanotechnology. 2011 Aug 5;22(31):315709. doi: 10.1088/0957-4484/22/31/315709. Epub 2011 Jul 8.

PMID:
21737873
7.

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation.

Hussain S, Pozzato A, Tormen M, Zannier V, Biasiol G.

Materials (Basel). 2016 Mar 18;9(3). pii: E208. doi: 10.3390/ma9030208.

8.

Intersublevel spectroscopy on single InAs-quantum dots by terahertz near-field microscopy.

Jacob R, Winnerl S, Fehrenbacher M, Bhattacharyya J, Schneider H, Wenzel MT, Ribbeck HG, Eng LM, Atkinson P, Schmidt OG, Helm M.

Nano Lett. 2012 Aug 8;12(8):4336-40. doi: 10.1021/nl302078w. Epub 2012 Jul 11.

PMID:
22775149
9.

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.

Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E, Pangrác J.

J Nanosci Nanotechnol. 2011 Aug;11(8):6804-9.

PMID:
22103083
10.

Theory of strain tuning fine structure splitting in self-assembled InAs/GaAs quantum dots.

Wang J, Guo GC, He L.

J Phys Condens Matter. 2014 Nov 26;26(47):475301. doi: 10.1088/0953-8984/26/47/475301. Epub 2014 Oct 23.

PMID:
25339242
11.

Optical studies of individual InAs quantum dots in GaAs: few-particle effects

Landin L, Miller MS, Pistol M, Pryor CE, Samuelson L.

Science. 1998 Apr 10;280(5361):262-4.

12.

Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures.

Fillipov S, Puttisong Y, Huang Y, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

ACS Nano. 2015 Jun 23;9(6):5741-9. doi: 10.1021/acsnano.5b01387. Epub 2015 May 15.

13.

Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

Kegel I I, Metzger TH, Lorke A, Peisl J, Stangl J, Bauer G, Garcia JM, Petroff PM.

Phys Rev Lett. 2000 Aug 21;85(8):1694-7.

PMID:
10970591
14.

Longitudinal wave function control in single quantum dots with an applied magnetic field.

Cao S, Tang J, Gao Y, Sun Y, Qiu K, Zhao Y, He M, Shi JA, Gu L, Williams DA, Sheng W, Jin K, Xu X.

Sci Rep. 2015 Jan 27;5:8041. doi: 10.1038/srep08041.

15.

Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.

Kammerer C, Cassabois G, Voisin C, Delalande C, Roussignol P, Gérard JM.

Phys Rev Lett. 2001 Nov 12;87(20):207401. Epub 2001 Oct 26.

PMID:
11690509
16.

Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field.

Beirne GJ, Hermannstädter C, Wang L, Rastelli A, Schmidt OG, Michler P.

Phys Rev Lett. 2006 Apr 7;96(13):137401. Epub 2006 Apr 4.

PMID:
16712031
17.

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures.

Bortoleto JR, Zelcovit JG, Gutiérrez HR, Bettini J, Cotta MA.

Nanotechnology. 2008 Jan 9;19(1):015601. doi: 10.1088/0957-4484/19/01/015601. Epub 2007 Nov 29.

PMID:
21730536
18.

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.

Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL.

Nanotechnology. 2009 Jul 29;20(30):305301. doi: 10.1088/0957-4484/20/30/305301. Epub 2009 Jul 7.

PMID:
19581699
19.

Growth, structural, and optical properties of self-assembled (In,Ga)as quantum posts on GaAs.

He J, Krenner HJ, Pryor C, Zhang JP, Wu Y, Allen DG, Morris CM, Sherwin MS, Petroff PM.

Nano Lett. 2007 Mar;7(3):802-6. Epub 2007 Feb 28.

PMID:
17326694
20.

Temperature and magnetic field effects on the transport controlled charge state of a single quantum dot.

Larsson LA, Larsson M, Moskalenko E, Holtz P.

Nanoscale Res Lett. 2010 May 5;5(7):1150-5. doi: 10.1007/s11671-010-9618-x.

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