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Items: 1 to 20 of 123

1.

Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

Qin XR, Swartzentruber BS, Lagally MG.

Phys Rev Lett. 2000 May 15;84(20):4645-8.

PMID:
10990761
2.

Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface.

Paul N, Filimonov S, Cherepanov V, Cakmak M, Voigtländer B.

Phys Rev Lett. 2007 Apr 20;98(16):166104. Epub 2007 Apr 20.

PMID:
17501435
3.

Ge diffusion at the Si(100) surface.

Bussmann E, Swartzentruber BS.

Phys Rev Lett. 2010 Mar 26;104(12):126101. Epub 2010 Mar 24.

PMID:
20366550
4.

Growth of germanium on Au(111): formation of germanene or intermixing of Au and Ge atoms?

Cantero ED, Solis LM, Tong Y, Fuhr JD, Martiarena ML, Grizzi O, Sánchez EA.

Phys Chem Chem Phys. 2017 Jul 19;19(28):18580-18586. doi: 10.1039/c7cp02949g.

PMID:
28686267
5.

Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-(7 x 7).

Wang YL, Gao HJ, Guo HM, Wang S, Pantelides ST.

Phys Rev Lett. 2005 Mar 18;94(10):106101. Epub 2005 Mar 18.

PMID:
15783496
6.

Nanoscale pit formation at 2D Ge layers on Si: influence of energy and entropy.

Romanyuk K, Brona J, Voigtländer B.

Phys Rev Lett. 2009 Aug 28;103(9):096101. Epub 2009 Aug 25.

PMID:
19792808
7.

Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2 × 1 surfaces.

Muzychenko DA, Schouteden K, Panov VI, Van Haesendonck C.

Nanotechnology. 2012 Nov 2;23(43):435605. doi: 10.1088/0957-4484/23/43/435605. Epub 2012 Oct 11.

PMID:
23059653
8.

Atomistics of Ge deposition on Si(100) by atomic layer epitaxy.

Lin DS, Wu JL, Pan SY, Chiang TC.

Phys Rev Lett. 2003 Jan 31;90(4):046102. Epub 2003 Jan 29.

PMID:
12570436
9.

Si/Ge intermixing during Ge Stranski-Krastanov growth.

Portavoce A, Hoummada K, Ronda A, Mangelinck D, Berbezier I.

Beilstein J Nanotechnol. 2014 Dec 9;5:2374-82. doi: 10.3762/bjnano.5.246. eCollection 2014.

10.

Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy

Qin XR, Swartzentruber BS, Lagally MG.

Phys Rev Lett. 2000 Oct 23;85(17):3660-3.

PMID:
11030975
11.

Electronic effects induced by single hydrogen atoms on the Ge(001) surface.

Radny MW, Shah GA, Smith PV, Schofield SR, Curson NJ.

J Chem Phys. 2008 Jun 28;128(24):244707. doi: 10.1063/1.2938091.

PMID:
18601365
12.

Morphological and compositional evolution of the ge/si(001) surface during exposure to a si flux.

Rastelli A, von Känel H, Albini G, Raiteri P, Migas DB, Miglio L.

Phys Rev Lett. 2003 May 30;90(21):216104. Epub 2003 May 27. Erratum in: Phys Rev Lett. 2003 Nov 28;91(22):229901.

PMID:
12786568
13.

Atomic structures of the Ge/Si(113)-(2 x 2) surface.

Zhang Z, Sumitomo K, Omi H, Ogino T, Nakamura J, Natori A.

Phys Rev Lett. 2002 Jun 24;88(25 Pt 1):256101. Epub 2002 Jun 5.

PMID:
12097102
14.

Ba termination of Ge(001) studied with STM.

Koczorowski W, Grzela T, Radny MW, Schofield SR, Capellini G, Czajka R, Schroeder T, Curson NJ.

Nanotechnology. 2015 Apr 17;26(15):155701. doi: 10.1088/0957-4484/26/15/155701. Epub 2015 Mar 23.

PMID:
25797886
15.

Reinvestigation of the alkali-metal-induced Ge(111)3 × 1 reconstruction on the basis of boundary structure observations.

Tomaszewska A, Shim H, Ahn C, Lee G.

Ultramicroscopy. 2011 May;111(6):392-6. doi: 10.1016/j.ultramic.2010.09.009. Epub 2010 Oct 13.

PMID:
21035266
16.

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy.

Scappucci G, Capellini G, Lee WC, Simmons MY.

Nanotechnology. 2009 Dec 9;20(49):495302. doi: 10.1088/0957-4484/20/49/495302. Epub 2009 Nov 6.

PMID:
19893153
17.

Phosphine dissociation and diffusion on Si(001) observed at the atomic scale.

Schofield SR, Curson NJ, Warschkow O, Marks NA, Wilson HF, Simmons MY, Smith PV, Radny MW, McKenzie DR, Clark RG.

J Phys Chem B. 2006 Feb 23;110(7):3173-9.

PMID:
16494325
18.

Unique dynamic appearance of a Ge-Si ad-dimer on Si(001).

Lu ZY, Liu F, Wang CZ, Qin XR, Swartzentruber BS, Lagally MG, Ho KM.

Phys Rev Lett. 2000 Dec 25;85(26 Pt 1):5603-6.

PMID:
11136057
19.

Identification of the first nucleated phase in submonolayer Ti deposited on Si(111)-7 x 7 by atomic resolution techniques.

Hsu HF, Hsu HC, Chiang TF, Chen LJ, Hsiao HL.

Ultramicroscopy. 2004 Aug;100(3-4):347-51.

PMID:
15231328
20.

Nanowires and nanorings at the atomic level.

Kawamura M, Paul N, Cherepanov V, Voigtländer B.

Phys Rev Lett. 2003 Aug 29;91(9):096102. Epub 2003 Aug 28.

PMID:
14525196

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