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Items: 1 to 20 of 85

1.

Inverse spin-valve-type magnetoresistance in spin engineered multilayered structures.

George JM, Pereira LG, Barthélémy A, Petroff F, Steren L, Duvail JL, Fert A, Loloee R, Holody P, Schroeder PA.

Phys Rev Lett. 1994 Jan 17;72(3):408-411. No abstract available.

PMID:
10056423
2.

Giant magnetoresistance in organic spin-valves.

Xiong ZH, Wu D, Vardeny ZV, Shi J.

Nature. 2004 Feb 26;427(6977):821-4.

PMID:
14985756
3.

Inverse magnetoresistance in the simple spin-valve system Fe1-xVx/Au/Co.

Renard J, Bruno P, Mégy R, Bartenlian B, Beauvillain P, Chappert C, Dupas C, Kolb E, Mulloy M, Veillet P, Vélu E.

Phys Rev B Condens Matter. 1995 May 1;51(18):12821-12824. No abstract available.

PMID:
9978063
4.

Infinite magnetoresistance from the spin dependent proximity effect in symmetry driven bcc-Fe/V/Fe heteroepitaxial superconducting spin valves.

Miao GX, Ramos AV, Moodera JS.

Phys Rev Lett. 2008 Sep 26;101(13):137001. Epub 2008 Sep 22.

PMID:
18851482
5.

Negative magnetoresistance in a vertical single-layer graphene spin valve at room temperature.

Singh AK, Eom J.

ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2493-6. doi: 10.1021/am4049145. Epub 2014 Feb 14.

PMID:
24495123
6.

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

Gould C, Rüster C, Jungwirth T, Girgis E, Schott GM, Giraud R, Brunner K, Schmidt G, Molenkamp LW.

Phys Rev Lett. 2004 Sep 10;93(11):117203. Epub 2004 Sep 9.

PMID:
15447375
7.

Tuning molecular orbitals in molecular electronics and spintronics.

Kim WY, Kim KS.

Acc Chem Res. 2010 Jan 19;43(1):111-20. doi: 10.1021/ar900156u.

PMID:
19769353
8.

Theory of the ac spin-valve effect.

Kochan D, Gmitra M, Fabian J.

Phys Rev Lett. 2011 Oct 21;107(17):176604. Epub 2011 Oct 20.

PMID:
22107552
9.

Spin-valve-like magnetoresistance in Mn2NiGa at room temperature.

Singh S, Rawat R, Muthu SE, D'Souza SW, Suard E, Senyshyn A, Banik S, Rajput P, Bhardwaj S, Awasthi AM, Ranjan R, Arumugam S, Schlagel DL, Lograsso TA, Chakrabarti A, Barman SR.

Phys Rev Lett. 2012 Dec 14;109(24):246601. Epub 2012 Dec 10.

PMID:
23368355
10.

Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

Lin T, Tang C, Alyahayaei HM, Shi J.

Phys Rev Lett. 2014 Jul 18;113(3):037203. Epub 2014 Jul 18.

PMID:
25083663
11.

Spin transfer torques in the nonlocal lateral spin valve.

Xu Y, Xia K, Ma Z.

Nanotechnology. 2008 Jun 11;19(23):235404. doi: 10.1088/0957-4484/19/23/235404. Epub 2008 May 6.

PMID:
21825793
12.

Sign control of magnetoresistance through chemically engineered interfaces.

Ciudad D, Gobbi M, Kinane CJ, Eich M, Moodera JS, Hueso LE.

Adv Mater. 2014 Dec 3;26(45):7561-7. doi: 10.1002/adma.201401283. Epub 2014 Oct 22.

PMID:
25339373
13.

Crossed Andreev reflection-induced magnetoresistance.

Giazotto F, Taddei F, Beltram F, Fazio R.

Phys Rev Lett. 2006 Aug 25;97(8):087001. Epub 2006 Aug 23.

PMID:
17026324
14.

Insertion of a specular reflective and transmissive nano-oxide layer into giant magnetoresistance spin-valve structure.

Nam C, Jang Y, Lee KS, Shim J, Cho BK.

J Nanosci Nanotechnol. 2006 Nov;6(11):3483-6.

PMID:
17252794
15.

What determines the sign reversal of magnetoresistance in a molecular tunnel junction?

Mandal S, Pati R.

ACS Nano. 2012 Apr 24;6(4):3580-8. doi: 10.1021/nn3006569. Epub 2012 Mar 15.

PMID:
22409503
16.

Spin-flip induced magnetoresistance in positionally disordered organic solids.

Harmon NJ, Flatté ME.

Phys Rev Lett. 2012 May 4;108(18):186602. Epub 2012 May 1.

PMID:
22681098
17.

Spin Hall magnetoresistance induced by a nonequilibrium proximity effect.

Nakayama H, Althammer M, Chen YT, Uchida K, Kajiwara Y, Kikuchi D, Ohtani T, Geprägs S, Opel M, Takahashi S, Gross R, Bauer GE, Goennenwein ST, Saitoh E.

Phys Rev Lett. 2013 May 17;110(20):206601. Epub 2013 May 13.

PMID:
25167435
18.

Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions.

Barraud C, Bouzehouane K, Deranlot C, Fusil S, Jabbar H, Arabski J, Rakshit R, Kim DJ, Kieber C, Boukari S, Bowen M, Beaurepaire E, Seneor P, Mattana R, Petroff F.

Phys Rev Lett. 2015 May 22;114(20):206603. Epub 2015 May 21.

PMID:
26047247
19.

Magnetoresistance effect in rubrene-based spin valves at room temperature.

Zhang X, Ma Q, Suzuki K, Sugihara A, Qin G, Miyazaki T, Mizukami S.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4685-92. doi: 10.1021/am508173j. Epub 2015 Feb 19.

PMID:
25668508
20.

In Situ Transmission Electron Microscopy Studies of the Magnetization Reversal Mechanism in Information Storage Materials.

Petford-Long AK, Portier X, Bayle-Guillemaud P, Anthony TC, Brug JA.

Microsc Microanal. 1998 May;4(3):325-333.

PMID:
9767670

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