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Items: 1 to 20 of 78

1.

Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy.

Yaguchi H, Tai K, Takemasa K, Onabe K, Ito R, Shiraki Y.

Phys Rev B Condens Matter. 1994 Mar 15;49(11):7394-7399. No abstract available.

PMID:
10009477
2.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207.

PMID:
20179329
3.

Photoreflectance study of narrow-well strained-layer InxGa1-xAs/GaAs coupled multiple-quantum-well structures.

Pan SH, Shen H, Hang Z, Pollak FH, Zhuang W, Xu Q, Roth AP, Masut RA, Lacelle C, Morris D.

Phys Rev B Condens Matter. 1988 Aug 15;38(5):3375-3382. No abstract available.

PMID:
9946680
4.

Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells.

Winkler R, Merkler M, Darnhofer T, Rössler U.

Phys Rev B Condens Matter. 1996 Apr 15;53(16):10858-10865. No abstract available.

PMID:
9982656
5.

Resonant-tunneling spectroscopy of coupled hole subbands in strained Si/SiGe triple-barrier structures.

Ferland B, Akyüz CD, Zaslavsky A, Sedgwick TO.

Phys Rev B Condens Matter. 1996 Jan 15;53(3):994-997. No abstract available.

PMID:
9983538
6.

Temperature dependence of the fundamental direct transitions of bulk Ge and two Ge/SiGe multiple-quantum-well structures.

Yin Y, Yan D, Pollak FH, Hybertsen MS, Vandenberg JM, Bean JC.

Phys Rev B Condens Matter. 1995 Sep 15;52(12):8951-8958. No abstract available.

PMID:
9979883
7.

Absorption in p-type Si-SiGe strained quantum-well structures.

Corbin E, Wong KB, Jaros M.

Phys Rev B Condens Matter. 1994 Jul 15;50(4):2339-2345. No abstract available.

PMID:
9976452
8.

Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

Chang GE, Chang SW, Chuang SL.

Opt Express. 2009 Jul 6;17(14):11246-58.

PMID:
19582037
9.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
10.

Photoreflectance in Ge/Ge0.7Si0.3 strained-layer superlattices.

Rodrigues PA, Cerdeira F, Bean JC.

Phys Rev B Condens Matter. 1992 Dec 15;46(23):15263-15269. No abstract available.

PMID:
10003641
11.

Photoreflectance and photoreflectance-excitation spectroscopy of a GaAs/Ga0.67Al0.33As multiple-quantum-well structure.

Shen H, Shen XC, Pollak FH, Sacks RN.

Phys Rev B Condens Matter. 1987 Aug 15;36(6):3487-3490. No abstract available.

PMID:
9943274
12.

Rapid photoreflectance spectroscopy for strained silicon metrology.

Chouaib H, Murtagh ME, Guènebaut V, Ward S, Kelly PV, Kennard M, Le Vaillant YM, Somekh MG, Pitter MC, Sharples SD.

Rev Sci Instrum. 2008 Oct;79(10):103106. doi: 10.1063/1.2999919.

PMID:
19044701
13.

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content.

Schmalz K, Yassievich IN, Collart EJ, Gravesteijn DJ.

Phys Rev B Condens Matter. 1996 Dec 15;54(23):16799-16812. No abstract available.

PMID:
9985810
14.

Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates.

Baeck JH, Park SA, Lee WJ, Jeong IS, Jeong K, Cho MH, Kim YK, Min BG, Ko DH.

J Chem Phys. 2009 May 28;130(20):204510. doi: 10.1063/1.3140203.

PMID:
19485460
15.

Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.

Liu WL, Borca-Tasciuc T, Chen G, Liu JL, Wang KL.

J Nanosci Nanotechnol. 2001 Mar;1(1):39-42.

PMID:
12914029
16.

Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells.

Arnaud G, Allègre J, Lefebvre P, Mathieu H, Howard LK, Dunstan DJ.

Phys Rev B Condens Matter. 1992 Dec 15;46(23):15290-15301. No abstract available.

PMID:
10003646
17.

Optical spectroscopy of a double-barrier resonant-tunneling structure containing a narrow-gap, strained-layer, quantum-well region.

Tagg WI, Skolnick MS, Emeny MT, Higgs AW, Whitehouse CR.

Phys Rev B Condens Matter. 1992 Jul 15;46(3):1505-1512. No abstract available.

PMID:
10003793
18.

Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics.

Tice JB, Weng C, Tolle J, D'Costa VR, Singh R, Menendez J, Kouvetakis J, Chizmeshya AV.

Dalton Trans. 2009 Sep 14;(34):6773-82. doi: 10.1039/b908280h.

PMID:
19690688
19.

Composition and stress analysis in Si structures using micro-raman spectroscopy.

McCarthy J, Bhattacharya S, Perova TS, Moore RA, Gamble H, Armstrong BM.

Scanning. 2004 Sep-Oct;26(5):235-9.

PMID:
15536979
20.

Characterization of effective masses in strained quantum-well laser structures.

Ma TA, Wartak MS.

Phys Rev B Condens Matter. 1994 Nov 15;50(20):15401-15404. No abstract available.

PMID:
9975895
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