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Items: 1 to 20 of 109

1.

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.

Xu R, Jang H, Lee MH, Amanov D, Cho Y, Kim H, Park S, Shin HJ, Ham D.

Nano Lett. 2019 Apr 10;19(4):2411-2417. doi: 10.1021/acs.nanolett.8b05140. Epub 2019 Mar 27.

PMID:
30896171
2.

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation.

Li D, Wu B, Zhu X, Wang J, Ryu B, Lu WD, Lu W, Liang X.

ACS Nano. 2018 Sep 25;12(9):9240-9252. doi: 10.1021/acsnano.8b03977. Epub 2018 Sep 11.

PMID:
30192507
3.

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.

Wang R, Shi T, Zhang X, Wang W, Wei J, Lu J, Zhao X, Wu Z, Cao R, Long S, Liu Q, Liu M.

Materials (Basel). 2018 Oct 26;11(11). pii: E2102. doi: 10.3390/ma11112102.

4.

Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System.

Jang BC, Kim S, Yang SY, Park J, Cha JH, Oh J, Choi J, Im SG, Dravid VP, Choi SY.

Nano Lett. 2019 Feb 13;19(2):839-849. doi: 10.1021/acs.nanolett.8b04023. Epub 2019 Jan 9.

PMID:
30608706
5.

Thinnest Nonvolatile Memory Based on Monolayer h-BN.

Wu X, Ge R, Chen PA, Chou H, Zhang Z, Zhang Y, Banerjee S, Chiang MH, Lee JC, Akinwande D.

Adv Mater. 2019 Apr;31(15):e1806790. doi: 10.1002/adma.201806790. Epub 2019 Feb 17.

PMID:
30773734
6.

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses.

Campbell KA, Drake KT, Barney Smith EH.

Front Bioeng Biotechnol. 2016 Dec 26;4:97. doi: 10.3389/fbioe.2016.00097. eCollection 2016.

7.

Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs.

Du N, Kiani M, Mayr CG, You T, Bürger D, Skorupa I, Schmidt OG, Schmidt H.

Front Neurosci. 2015 Jun 30;9:227. doi: 10.3389/fnins.2015.00227. eCollection 2015.

8.

A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems.

Wang Z, Ambrogio S, Balatti S, Ielmini D.

Front Neurosci. 2015 Jan 15;8:438. doi: 10.3389/fnins.2014.00438. eCollection 2014.

9.

Vertical heterostructure of two-dimensional MoS₂ and WSe₂ with vertically aligned layers.

Yu JH, Lee HR, Hong SS, Kong D, Lee HW, Wang H, Xiong F, Wang S, Cui Y.

Nano Lett. 2015 Feb 11;15(2):1031-5. doi: 10.1021/nl503897h. Epub 2015 Jan 15.

PMID:
25590995
10.

A compound memristive synapse model for statistical learning through STDP in spiking neural networks.

Bill J, Legenstein R.

Front Neurosci. 2014 Dec 16;8:412. doi: 10.3389/fnins.2014.00412. eCollection 2014.

11.

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide.

Sangwan VK, Lee HS, Bergeron H, Balla I, Beck ME, Chen KS, Hersam MC.

Nature. 2018 Feb 21;554(7693):500-504. doi: 10.1038/nature25747.

PMID:
29469093
12.

Atomically Thin Femtojoule Memristive Device.

Zhao H, Dong Z, Tian H, DiMarzi D, Han MG, Zhang L, Yan X, Liu F, Shen L, Han SJ, Cronin S, Wu W, Tice J, Guo J, Wang H.

Adv Mater. 2017 Dec;29(47). doi: 10.1002/adma.201703232. Epub 2017 Oct 25.

PMID:
29067743
13.

Tuning resistive switching characteristics of tantalum oxide memristors through Si doping.

Kim S, Choi S, Lee J, Lu WD.

ACS Nano. 2014 Oct 28;8(10):10262-9. doi: 10.1021/nn503464q. Epub 2014 Sep 29.

PMID:
25255038
14.

Crossbar Nanoscale HfO2-Based Electronic Synapses.

Matveyev Y, Kirtaev R, Fetisova A, Zakharchenko S, Negrov D, Zenkevich A.

Nanoscale Res Lett. 2016 Dec;11(1):147. doi: 10.1186/s11671-016-1360-6. Epub 2016 Mar 15.

15.

Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS2/WS2/Graphene Devices.

Zhou Y, Xu W, Sheng Y, Huang H, Zhang Q, Hou L, Shautsova V, Warner JH.

ACS Appl Mater Interfaces. 2019 Jan 16;11(2):2234-2242. doi: 10.1021/acsami.8b16790. Epub 2019 Jan 3.

PMID:
30605329
16.

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures.

Huh W, Jang S, Lee JY, Lee D, Lee D, Lee JM, Park HG, Kim JC, Jeong HY, Wang G, Lee CH.

Adv Mater. 2018 Aug;30(35):e1801447. doi: 10.1002/adma.201801447. Epub 2018 Jul 17.

PMID:
30015988
17.

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics.

Singh E, Singh P, Kim KS, Yeom GY, Nalwa HS.

ACS Appl Mater Interfaces. 2019 Mar 27;11(12):11061-11105. doi: 10.1021/acsami.8b19859. Epub 2019 Mar 18.

PMID:
30830744
18.

Memristive Ion Channel-Doped Biomembranes as Synaptic Mimics.

Najem JS, Taylor GJ, Weiss RJ, Hasan MS, Rose G, Schuman CD, Belianinov A, Collier CP, Sarles SA.

ACS Nano. 2018 May 22;12(5):4702-4711. doi: 10.1021/acsnano.8b01282. Epub 2018 Mar 29.

PMID:
29578693
19.

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

Duan X, Wang C, Pan A, Yu R, Duan X.

Chem Soc Rev. 2015 Dec 21;44(24):8859-76. doi: 10.1039/c5cs00507h. Epub 2015 Oct 19.

PMID:
26479493
20.

On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex.

Zamarreño-Ramos C, Camuñas-Mesa LA, Pérez-Carrasco JA, Masquelier T, Serrano-Gotarredona T, Linares-Barranco B.

Front Neurosci. 2011 Mar 17;5:26. doi: 10.3389/fnins.2011.00026. eCollection 2011.

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