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Items: 1 to 20 of 99

1.

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm.

Dumas DC, Gallacher K, Rhead S, Myronov M, Leadley DR, Paul DJ.

Opt Express. 2014 Aug 11;22(16):19284-92. doi: 10.1364/OE.22.019284.

PMID:
25321013
2.

23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.

Chaisakul P, Marris-Morini D, Rouifed MS, Isella G, Chrastina D, Frigerio J, Le Roux X, Edmond S, Coudevylle JR, Vivien L.

Opt Express. 2012 Jan 30;20(3):3219-24. doi: 10.1364/OE.20.003219.

PMID:
22330559
3.

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators.

Edwards EH, Audet RM, Fei ET, Claussen SA, Schaevitz RK, Tasyurek E, Rong Y, Kamins TI, Harris JS, Miller DA.

Opt Express. 2012 Dec 31;20(28):29164-73. doi: 10.1364/OE.20.029164.

PMID:
23388742
4.

Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.

Edwards EH, Lever L, Fei ET, Kamins TI, Ikonic Z, Harris JS, Kelsall RW, Miller DA.

Opt Express. 2013 Jan 14;21(1):867-76. doi: 10.1364/OE.21.000867.

PMID:
23388980
5.

Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

Rouifed MS, Chaisakul P, Marris-Morini D, Frigerio J, Isella G, Chrastina D, Edmond S, Le Roux X, Coudevylle JR, Vivien L.

Opt Lett. 2012 Oct 1;37(19):3960-2. doi: 10.1364/OL.37.003960.

PMID:
23027245
6.

Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.

Lever L, Hu Y, Myronov M, Liu X, Owens N, Gardes FY, Marko IP, Sweeney SJ, Ikonić Z, Leadley DR, Reed GT, Kelsall RW.

Opt Lett. 2011 Nov 1;36(21):4158-60. doi: 10.1364/OL.36.004158.

PMID:
22048350
7.

Giant electro-optic effect in Ge/SiGe coupled quantum wells.

Frigerio J, Vakarin V, Chaisakul P, Ferretto M, Chrastina D, Le Roux X, Vivien L, Isella G, Marris-Morini D.

Sci Rep. 2015 Oct 19;5:15398. doi: 10.1038/srep15398.

8.

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon.

Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS.

Nature. 2005 Oct 27;437(7063):1334-6.

PMID:
16251959
9.

Theoretical analysis of electro-refractive index variation in asymmetric Ge/SiGe coupled quantum wells.

Zhang Y, Sun J, Gao J.

Opt Express. 2017 Nov 27;25(24):30032-30042. doi: 10.1364/OE.25.030032.

PMID:
29221038
10.

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.

Chaisakul P, Marris-Morini D, Isella G, Chrastina D, Le Roux X, Gatti E, Edmond S, Osmond J, Cassan E, Vivien L.

Opt Lett. 2010 Sep 1;35(17):2913-5. doi: 10.1364/OL.35.002913.

PMID:
20808367
11.

Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides.

Chaisakul P, Marris-Morini D, Isella G, Chrastina D, Le Roux X, Edmond S, Coudevylle JR, Cassan E, Vivien L.

Opt Lett. 2011 May 15;36(10):1794-6. doi: 10.1364/OL.36.001794.

PMID:
21593893
12.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
13.

Design and analysis of electro-absorption modulators with uniaxially stressed Ge/SiGe multiple quantum wells.

Gao J, Sun J, Jiang J, Zhou H, Zhou Y.

Opt Express. 2017 May 15;25(10):10874-10884. doi: 10.1364/OE.25.010874.

PMID:
28788775
14.

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

Chen HS, Liu ZH, Shih PY, Su CY, Chen CY, Lin CH, Yao YF, Kiang YW, Yang CC.

Opt Express. 2014 Apr 7;22(7):8367-75. doi: 10.1364/OE.22.008367.

PMID:
24718210
15.

Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.

Chang GE, Chen SW, Cheng HH.

Opt Express. 2016 Aug 8;24(16):17562-71. doi: 10.1364/OE.24.017562.

PMID:
27505727
16.

Optical modulator on silicon employing germanium quantum wells.

Roth JE, Fidaner O, Schaevitz RK, Kuo YH, Kamins TI, Harris JS, Miller DA.

Opt Express. 2007 Apr 30;15(9):5851-9.

PMID:
19532843
17.

10 Gb/s InP-based Mach-Zehnder modulator for operation at 2 μm wavelengths.

Sadiq MU, Gleeson MR, Ye N, O'Callaghan J, Morrissey P, Zhang HY, Thomas K, Gocalinska A, Pelucchi E, Gunning FC, Roycroft B, Peters FH, Corbett B.

Opt Express. 2015 May 4;23(9):10905-13. doi: 10.1364/OE.23.010905.

PMID:
25969186
18.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

Feng NN, Liao S, Feng D, Wang X, Dong P, Liang H, Kung CC, Qian W, Liu Y, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 25;19(9):8715-20. doi: 10.1364/OE.19.008715.

PMID:
21643123
19.

A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.

Krishnamoorthy AV, Zheng X, Feng D, Lexau J, Buckwalter JF, Thacker HD, Liu F, Luo Y, Chang E, Amberg P, Shubin I, Djordjevic SS, Lee JH, Lin S, Liang H, Abed A, Shafiiha R, Raj K, Ho R, Asghari M, Cunningham JE.

Opt Express. 2014 May 19;22(10):12289-95. doi: 10.1364/OE.22.012289.

PMID:
24921347
20.

A PN-type quantum barrier for InGaN/GaN light emitting diodes.

Zhang ZH, Tan ST, Ji Y, Liu W, Ju Z, Kyaw Z, Sun XW, Demir HV.

Opt Express. 2013 Jul 1;21(13):15676-85. doi: 10.1364/OE.21.015676.

PMID:
23842353

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