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  • The following term was not found in PubMed: Muilwijk-Koezen.
Rev Sci Instrum. 2016 Apr;87(4):045004. doi: 10.1063/1.4945801.

Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.

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School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore.
Key Laboratory for Optoelectronic Technology and Systems, Defense Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, International R&D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, China.
Excelitas Technologies, Singapore.
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea.


The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.


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