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  • The following term was not found in PubMed: Muilwijk-Koezen.
Rev Sci Instrum. 2016 Apr;87(4):045004. doi: 10.1063/1.4945801.

Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.

Author information

1
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
2
Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore.
3
Key Laboratory for Optoelectronic Technology and Systems, Defense Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, International R&D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, China.
4
Excelitas Technologies, Singapore.
5
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea.

Abstract

The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.

PMID:
27131699
DOI:
10.1063/1.4945801

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