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Items: 4

1.

Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn.

Zhou J, Wang X, Liu Y, Yu J, Fu H, Liu L, Chen S, Deng J, Lin W, Shu X, Yoong HY, Hong T, Matsuda M, Yang P, Adams S, Yan B, Han X, Chen J.

Sci Adv. 2019 May 10;5(5):eaau6696. doi: 10.1126/sciadv.aau6696. eCollection 2019 May.

2.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit.

Wang H, Liu ZR, Yoong HY, Paudel TR, Xiao JX, Guo R, Lin WN, Yang P, Wang J, Chow GM, Venkatesan T, Tsymbal EY, Tian H, Chen JS.

Nat Commun. 2018 Aug 20;9(1):3319. doi: 10.1038/s41467-018-05662-y.

3.

Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering.

Guo R, Zhou Y, Wu L, Wang Z, Lim Z, Yan X, Lin W, Wang H, Yoong HY, Chen S, Ariando, Venkatesan T, Wang J, Chow GM, Gruverman A, Miao X, Zhu Y, Chen J.

ACS Appl Mater Interfaces. 2018 Apr 18;10(15):12862-12869. doi: 10.1021/acsami.8b01469. Epub 2018 Apr 4.

PMID:
29617112
4.

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions.

Guo R, Wang Y, Yoong HY, Chai J, Wang H, Lin W, Chen S, Yan X, Venkatesan T, Ariando, Gruverman A, Wu Y, Chen J.

ACS Appl Mater Interfaces. 2017 Feb 15;9(6):5050-5055. doi: 10.1021/acsami.6b15564. Epub 2017 Feb 6.

PMID:
28165212

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