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Items: 44

1.

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene.

Liudi Mulyo A, Rajpalke MK, Vullum PE, Weman H, Kishino K, Fimland BO.

Sci Rep. 2020 Jan 21;10(1):853. doi: 10.1038/s41598-019-55424-z.

2.

The Neuropeptide Y Y2 Receptor Is Coexpressed with Nppb in Primary Afferent Neurons and Y2 Activation Reduces Histaminergic and IL-31-Induced Itch.

Ma H, Gao T, Jakobsson JET, Weman HM, Xu B, Larhammar D, Lagerström MC.

J Pharmacol Exp Ther. 2020 Jan;372(1):73-82. doi: 10.1124/jpet.119.262584. Epub 2019 Nov 26.

PMID:
31771994
3.

Spinal gastrin releasing peptide receptor expressing interneurons are controlled by local phasic and tonic inhibition.

Freitag FB, Ahemaiti A, Jakobsson JET, Weman HM, Lagerström MC.

Sci Rep. 2019 Nov 12;9(1):16573. doi: 10.1038/s41598-019-52642-3.

4.

Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications.

Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO.

Nanotechnology. 2019 Jul 19;30(29):294001. doi: 10.1088/1361-6528/ab13ed. Epub 2019 Mar 27.

PMID:
30917343
5.

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure.

Mukherjee A, Yun H, Shin DH, Nam J, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Kim KS, Lee SW, Kim DC.

ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13514-13522. doi: 10.1021/acsami.8b20581. Epub 2019 Mar 29.

PMID:
30892012
6.

GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode.

Høiaas IM, Liudi Mulyo A, Vullum PE, Kim DC, Ahtapodov L, Fimland BO, Kishino K, Weman H.

Nano Lett. 2019 Mar 13;19(3):1649-1658. doi: 10.1021/acs.nanolett.8b04607. Epub 2019 Feb 6.

PMID:
30702300
7.

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer.

Liudi Mulyo A, Rajpalke MK, Kuroe H, Vullum PE, Weman H, Fimland BO, Kishino K.

Nanotechnology. 2019 Jan 4;30(1):015604. doi: 10.1088/1361-6528/aae76b. Epub 2018 Oct 30.

PMID:
30375368
8.

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature.

Ren D, Ahtapodov L, Nilsen JS, Yang J, Gustafsson A, Huh J, Conibeer GJ, van Helvoort ATJ, Fimland BO, Weman H.

Nano Lett. 2018 Apr 11;18(4):2304-2310. doi: 10.1021/acs.nanolett.7b05015. Epub 2018 Mar 9.

PMID:
29502425
9.

Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires.

Ahtapodov L, Munshi AM, Nilsen JS, Reinertsen JF, Dheeraj DL, Fimland BO, van Helvoort AT, Weman H.

Nanotechnology. 2016 Nov 4;27(44):445711. Epub 2016 Sep 30.

PMID:
27688265
10.

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients.

Huh J, Kim DC, Munshi AM, Dheeraj DL, Jang D, Kim GT, Fimland BO, Weman H.

Nanotechnology. 2016 Sep 23;27(38):385703. doi: 10.1088/0957-4484/27/38/385703. Epub 2016 Aug 16.

PMID:
27528601
11.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort AT, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S.

Nano Lett. 2016 Jun 8;16(6):3524-32. doi: 10.1021/acs.nanolett.6b00484. Epub 2016 May 3.

PMID:
27124605
12.

In Situ Heat-Induced Replacement of GaAs Nanowires by Au.

Fauske VT, Huh J, Divitini G, Dheeraj DL, Munshi AM, Ducati C, Weman H, Fimland BO, van Helvoort AT.

Nano Lett. 2016 May 11;16(5):3051-7. doi: 10.1021/acs.nanolett.6b00109. Epub 2016 Apr 28.

PMID:
27104293
13.

New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

Ren D, Dheeraj DL, Jin C, Nilsen JS, Huh J, Reinertsen JF, Munshi AM, Gustafsson A, van Helvoort AT, Weman H, Fimland BO.

Nano Lett. 2016 Feb 10;16(2):1201-9. doi: 10.1021/acs.nanolett.5b04503. Epub 2016 Jan 8.

PMID:
26726825
14.

In situ electronic probing of semiconducting nanowires in an electron microscope.

Fauske VT, Erlbeck MB, Huh J, Kim DC, Munshi AM, Dheeraj DL, Weman H, Fimland BO, Van Helvoort AT.

J Microsc. 2016 May;262(2):183-8. doi: 10.1111/jmi.12328. Epub 2015 Oct 26.

15.

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients.

Huh J, Yun H, Kim DC, Munshi AM, Dheeraj DL, Kauko H, van Helvoort AT, Lee S, Fimland BO, Weman H.

Nano Lett. 2015 Jun 10;15(6):3709-15. doi: 10.1021/acs.nanolett.5b00089. Epub 2015 May 12.

PMID:
25941743
16.

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress.

Signorello G, Lörtscher E, Khomyakov PA, Karg S, Dheeraj DL, Gotsmann B, Weman H, Riel H.

Nat Commun. 2014 Apr 10;5:3655. doi: 10.1038/ncomms4655.

PMID:
24718053
17.

Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography.

Munshi AM, Dheeraj DL, Fauske VT, Kim DC, Huh J, Reinertsen JF, Ahtapodov L, Lee KD, Heidari B, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2014 Feb 12;14(2):960-6. doi: 10.1021/nl404376m. Epub 2014 Jan 29.

PMID:
24467394
18.

Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.

Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.

Nanotechnology. 2013 Oct 11;24(40):405601. doi: 10.1088/0957-4484/24/40/405601. Epub 2013 Sep 12.

PMID:
24028926
19.

Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.

Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.

Nanotechnology. 2013 Jan 11;24(1):015601. doi: 10.1088/0957-4484/24/1/015601. Epub 2012 Dec 5.

PMID:
23220972
20.

A story told by a single nanowire: optical properties of wurtzite GaAs.

Ahtapodov L, Todorovic J, Olk P, Mjåland T, Slåttnes P, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2012 Dec 12;12(12):6090-5. doi: 10.1021/nl3025714. Epub 2012 Nov 16.

PMID:
23131181
21.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2012 Sep 12;12(9):4570-6. doi: 10.1021/nl3018115. Epub 2012 Aug 23.

PMID:
22889019
22.

Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM.

Kauko H, Grieb T, Bjørge R, Schowalter M, Munshi AM, Weman H, Rosenauer A, van Helvoort AT.

Micron. 2013 Jan;44:254-60. doi: 10.1016/j.micron.2012.07.002. Epub 2012 Jul 20.

PMID:
22854214
23.

Effects of substrate annealing on the gold-catalyzed growth of ZnO nanostructures.

Weigand CC, Skåre D, Ladam C, Grepstad J, Weman H.

Nanoscale Res Lett. 2011 Oct 26;6(1):566. doi: 10.1186/1556-276X-6-566.

24.

Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires.

Todorovic J, Moses AF, Karlberg T, Olk P, Dheeraj DL, Fimland BO, Weman H, van Helvoort AT.

Nanotechnology. 2011 Aug 12;22(32):325707. doi: 10.1088/0957-4484/22/32/325707. Epub 2011 Jul 20.

PMID:
21775779
25.

Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.

Ba Hoang T, Moses AF, Ahtapodov L, Zhou H, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2010 Aug 11;10(8):2927-33. doi: 10.1021/nl101087e.

PMID:
20604543
26.

Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.

Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.

Nanotechnology. 2009 Oct 14;20(41):415701. doi: 10.1088/0957-4484/20/41/415701. Epub 2009 Sep 16.

PMID:
19755725
27.

Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.

Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2008 Dec;8(12):4459-63. doi: 10.1021/nl802406d.

PMID:
19367852
28.

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.

Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.

Nanotechnology. 2008 Jul 9;19(27):275605. doi: 10.1088/0957-4484/19/27/275605. Epub 2008 May 28.

PMID:
21828712
29.

Relationship between nonparabolicity and confinement energies in In0.53Ga0.47As/InP quantum wires.

Hammersberg J, Weman H, Notomi M, Lundström T, Tamamura T, Potemski M.

Phys Rev B Condens Matter. 1996 Aug 15;54(7):4835-4842. No abstract available.

PMID:
9986444
30.

Magneto-optical determination of exciton binding energies in quantum-wire superlattices.

Weman H, Potemski M, Lazzouni ME, Miller MS, Merz JL.

Phys Rev B Condens Matter. 1996 Mar 15;53(11):6959-6962. No abstract available.

PMID:
9982132
31.

Dimensionality effects on strain and quantum confinement in lattice-mismatched InAsxP1-x/InP quantum wires.

Notomi M, Hammersberg J, Weman H, Nojima S, Sugiura H, Okamoto M, Tamamura T, Potemski M.

Phys Rev B Condens Matter. 1995 Oct 15;52(15):11147-11158. No abstract available.

PMID:
9980215
32.

Size dependence of lateral quantum-confinement effects of the optical response in In0.53Ga0.47As/InP quantum wires.

Notomi M, Nojima S, Okamoto M, Iwamura H, Tamamura T, Hammersberg J, Weman H.

Phys Rev B Condens Matter. 1995 Oct 15;52(15):11073-11088. No abstract available.

PMID:
9980205
33.

Optical properties of quantum-wire arrays in (Al,Ga)As serpentine-superlattice structures.

Weman H, Miller MS, Pryor CE, Li YJ, Bergman P, Petroff PM, Merz JL.

Phys Rev B Condens Matter. 1993 Sep 15;48(11):8047-8060. No abstract available.

PMID:
10006994
34.

Comment on "Optical anisotropy in a quantum-well-wire array with two-dimensional quantum confinement"

Weman H, Miller MS, Merz JL.

Phys Rev Lett. 1992 Jun 15;68(24):3656. No abstract available.

PMID:
10045761
35.

Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substrates.

Miller MS, Weman H, Pryor CE, Krishnamurthy M, Petroff PM, Kroemer H, Merz JL.

Phys Rev Lett. 1992 Jun 8;68(23):3464-3467. No abstract available.

PMID:
10045710
36.

Impact ionization of excitons and donors in AlxGa1-xAs/(n-type GaAs):Si quantum wells.

Weman H, Treacy GM, Hjalmarson HP, Law KK, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1992 Mar 15;45(11):6263-6266. No abstract available.

PMID:
10000375
37.

Intensity of exciton luminescence in silicon in a weak magnetic field.

Chen WM, Awadelkarim OO, Weman H, Monemar B.

Phys Rev B Condens Matter. 1990 Sep 15;42(8):5120-5125. No abstract available.

PMID:
9996073
38.

Strain-induced quantum confinement of carriers due to extended defects in silicon.

Weman H, Monemar B, Oehrlein GS, Jeng SJ.

Phys Rev B Condens Matter. 1990 Aug 15;42(5):3109-3112. No abstract available.

PMID:
9995807
39.

Defect annealing in electron-irradiated boron-doped silicon.

Awadelkarim OO, Chen WM, Weman H, Monemar B.

Phys Rev B Condens Matter. 1990 Jan 15;41(2):1019-1027. No abstract available.

PMID:
9993798
40.

Optically detected magnetic resonance of a thermally induced deep center in electron-irradiated silicon.

Chen WM, Awadelkarim OO, Weman H, Monemar B.

Phys Rev B Condens Matter. 1989 Nov 15;40(14):10013-10016. No abstract available.

PMID:
9991541
41.

Optical detection of microwave-induced impact ionization of bound excitons in silicon.

Weman H, Godlewski M, Monemar B.

Phys Rev B Condens Matter. 1988 Dec 15;38(17):12525-12530. No abstract available.

PMID:
9946197
42.

Impact ionization of free excitons and electron-hole droplets in silicon in weak electric and magnetic fields.

Zhao QX, Weman H, Monemar B.

Phys Rev B Condens Matter. 1988 Oct 15;38(12):8529-8532. No abstract available.

PMID:
9945627
43.

Electric-field-induced quenching of shallow and deep bound excitons in silicon.

Weman H, Zhao QX, Monemar B.

Phys Rev B Condens Matter. 1988 Sep 15;38(9):6185-6190. No abstract available.

PMID:
9947079
44.

Impact ionization of excitons and electron-hole droplets in silicon.

Weman H, Zhao QX, Monemar B.

Phys Rev B Condens Matter. 1987 Sep 15;36(9):5054-5057. No abstract available.

PMID:
9943533

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