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Items: 1 to 50 of 59

1.

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures.

Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E.

Nano Lett. 2018 Aug 24. doi: 10.1021/acs.nanolett.8b02770. [Epub ahead of print]

PMID:
30105907
2.

Topologically Protected Helical States in Minimally Twisted Bilayer Graphene.

Huang S, Kim K, Efimkin DK, Lovorn T, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E, LeRoy BJ.

Phys Rev Lett. 2018 Jul 20;121(3):037702. doi: 10.1103/PhysRevLett.121.037702.

PMID:
30085814
3.

Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands.

Wu F, Lovorn T, Tutuc E, MacDonald AH.

Phys Rev Lett. 2018 Jul 13;121(2):026402. doi: 10.1103/PhysRevLett.121.026402.

PMID:
30085734
4.

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures.

Burg GW, Prasad N, Kim K, Taniguchi T, Watanabe K, MacDonald AH, Register LF, Tutuc E.

Phys Rev Lett. 2018 Apr 27;120(17):177702. doi: 10.1103/PhysRevLett.120.177702.

PMID:
29756812
5.

Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}.

Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E.

Phys Rev Lett. 2018 Mar 9;120(10):107703. doi: 10.1103/PhysRevLett.120.107703.

PMID:
29570322
6.

Photonic-crystal exciton-polaritons in monolayer semiconductors.

Zhang L, Gogna R, Burg W, Tutuc E, Deng H.

Nat Commun. 2018 Feb 19;9(1):713. doi: 10.1038/s41467-018-03188-x.

7.

Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires.

Wen F, Tutuc E.

Nano Lett. 2018 Jan 10;18(1):94-100. doi: 10.1021/acs.nanolett.7b03450. Epub 2017 Dec 11.

PMID:
29185763
8.

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}.

Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E.

Phys Rev Lett. 2017 Jun 16;118(24):247701. doi: 10.1103/PhysRevLett.118.247701. Epub 2017 Jun 15.

PMID:
28665633
9.

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures.

Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E.

Nano Lett. 2017 Jun 14;17(6):3919-3925. doi: 10.1021/acs.nanolett.7b01505. Epub 2017 Jun 2.

PMID:
28557462
10.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E.

ACS Nano. 2017 May 23;11(5):4832-4839. doi: 10.1021/acsnano.7b01306. Epub 2017 Apr 17.

PMID:
28414214
11.

Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene.

Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E.

Proc Natl Acad Sci U S A. 2017 Mar 28;114(13):3364-3369. doi: 10.1073/pnas.1620140114. Epub 2017 Mar 14.

12.

Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment.

Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E.

Nano Lett. 2016 Sep 14;16(9):5968. doi: 10.1021/acs.nanolett.6b03255. Epub 2016 Aug 15. No abstract available.

PMID:
27526261
13.

Giant Frictional Drag in Double Bilayer Graphene Heterostructures.

Lee K, Xue J, Dillen DC, Watanabe K, Taniguchi T, Tutuc E.

Phys Rev Lett. 2016 Jul 22;117(4):046803. doi: 10.1103/PhysRevLett.117.046803. Epub 2016 Jul 18.

PMID:
27494492
14.

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.

Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK.

Nano Lett. 2016 Aug 10;16(8):4975-81. doi: 10.1021/acs.nanolett.6b01646. Epub 2016 Jul 20.

PMID:
27416362
15.

Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces.

Dabidian N, Dutta-Gupta S, Kholmanov I, Lai K, Lu F, Lee J, Jin M, Trendafilov S, Khanikaev A, Fallahazad B, Tutuc E, Belkin MA, Shvets G.

Nano Lett. 2016 Jun 8;16(6):3607-15. doi: 10.1021/acs.nanolett.6b00732. Epub 2016 May 12.

PMID:
27152557
16.

Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.

Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E.

Phys Rev Lett. 2016 Feb 26;116(8):086601. doi: 10.1103/PhysRevLett.116.086601. Epub 2016 Feb 23.

PMID:
26967432
17.

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK.

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11.

PMID:
26939890
18.

van der Waals Heterostructures with High Accuracy Rotational Alignment.

Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E.

Nano Lett. 2016 Mar 9;16(3):1989-95. doi: 10.1021/acs.nanolett.5b05263. Epub 2016 Feb 15. Erratum in: Nano Lett. 2016 Sep 14;16(9):5968.

PMID:
26859527
19.

Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

Dillen DC, Wen F, Kim K, Tutuc E.

Nano Lett. 2016 Jan 13;16(1):392-8. doi: 10.1021/acs.nanolett.5b03961. Epub 2015 Nov 30.

PMID:
26606651
20.

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK.

ACS Nano. 2015 Oct 27;9(10):10402-10. doi: 10.1021/acsnano.5b04611. Epub 2015 Sep 14.

PMID:
26343531
21.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK.

Nano Lett. 2015 Jul 8;15(7):4329-36. doi: 10.1021/acs.nanolett.5b00314. Epub 2015 Jun 26.

PMID:
26091062
22.

Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy.

Zhang Z, Dillen DC, Tutuc E, Yu ET.

Nano Lett. 2015 Jul 8;15(7):4303-10. doi: 10.1021/acs.nanolett.5b00176. Epub 2015 Jun 9.

PMID:
26053999
23.

Band Alignment in WSe2-Graphene Heterostructures.

Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E.

ACS Nano. 2015 Apr 28;9(4):4527-32. doi: 10.1021/acsnano.5b01114. Epub 2015 Mar 23.

PMID:
25768037
24.

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures.

Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S, Paggen M, Ali MN, Cava RJ, Tutuc E, LeRoy BJ.

Nano Lett. 2015 Mar 11;15(3):1925-9. doi: 10.1021/nl5047736. Epub 2015 Feb 12.

PMID:
25665012
25.

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK.

ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24.

PMID:
25514177
26.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E.

Nano Lett. 2015 Jan 14;15(1):428-33. doi: 10.1021/nl503756y. Epub 2014 Dec 8.

PMID:
25436861
27.

Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms.

Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK.

ACS Nano. 2014 Oct 28;8(10):10480-5. doi: 10.1021/nn5038509. Epub 2014 Oct 10.

PMID:
25259872
28.

Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene.

Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E.

Science. 2014 Jul 4;345(6192):58-61. doi: 10.1126/science.1251003.

29.

Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances.

Wu C, Arju N, Kelp G, Fan JA, Dominguez J, Gonzales E, Tutuc E, Brener I, Shvets G.

Nat Commun. 2014 May 27;5:3892. doi: 10.1038/ncomms4892.

PMID:
24861488
30.

Band offset and negative compressibility in graphene-MoS2 heterostructures.

Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E.

Nano Lett. 2014;14(4):2039-45. doi: 10.1021/nl500212s. Epub 2014 Mar 19.

PMID:
24611616
31.

Radial modulation doping in core-shell nanowires.

Dillen DC, Kim K, Liu ES, Tutuc E.

Nat Nanotechnol. 2014 Feb;9(2):116-20. doi: 10.1038/nnano.2013.301. Epub 2014 Jan 19.

PMID:
24441982
32.

The role of surface oxygen in the growth of large single-crystal graphene on copper.

Hao Y, Bharathi MS, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson CW, Tutuc E, Yakobson BI, McCarty KF, Zhang YW, Kim P, Hone J, Colombo L, Ruoff RS.

Science. 2013 Nov 8;342(6159):720-3. doi: 10.1126/science.1243879. Epub 2013 Oct 24.

33.

Direct measurement of the Fermi energy in graphene using a double-layer heterostructure.

Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E.

Phys Rev Lett. 2012 Mar 16;108(11):116404. Epub 2012 Mar 14.

PMID:
22540496
34.

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires.

Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E.

Nano Lett. 2012 Jan 11;12(1):108-12. doi: 10.1021/nl2030695. Epub 2011 Dec 6.

PMID:
22111925
35.

CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films.

Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK.

ACS Nano. 2011 Sep 27;5(9):7198-204. doi: 10.1021/nn202012m. Epub 2011 Aug 5.

PMID:
21800895
36.

Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields.

Kim S, Lee K, Tutuc E.

Phys Rev Lett. 2011 Jul 1;107(1):016803. Epub 2011 Jun 30.

PMID:
21797563
37.

Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking.

Lee K, Kim S, Points MS, Beechem TE, Ohta T, Tutuc E.

Nano Lett. 2011 Sep 14;11(9):3624-8. doi: 10.1021/nl201430a. Epub 2011 Aug 3.

PMID:
21797267
38.

Wire textured, multi-crystalline Si solar cells created using self-assembled masks.

Wang KA, Gunawan O, Moumen N, Tulevski G, Mohamed H, Fallahazad B, Tutuc E, Guha S.

Opt Express. 2010 Nov 8;18 Suppl 4:A568-74. doi: 10.1364/OE.18.00A568.

PMID:
21165090
39.

Low-frequency acoustic phonon temperature distribution in electrically biased graphene.

Jo I, Hsu IK, Lee YJ, Sadeghi MM, Kim S, Cronin S, Tutuc E, Banerjee SK, Yao Z, Shi L.

Nano Lett. 2011 Jan 12;11(1):85-90. doi: 10.1021/nl102858c. Epub 2010 Dec 2.

PMID:
21126050
40.

Lateral spin injection in germanium nanowires.

Liu ES, Nah J, Varahramyan KM, Tutuc E.

Nano Lett. 2010 Sep 8;10(9):3297-301. doi: 10.1021/nl1008663. Erratum in: Nano Lett. 2011 Sep 14;11(9):4027.

PMID:
20707379
41.

Large-area synthesis of high-quality and uniform graphene films on copper foils.

Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS.

Science. 2009 Jun 5;324(5932):1312-4. doi: 10.1126/science.1171245. Epub 2009 May 7.

42.

Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solids.

Wang Z, Chen YP, Engel LW, Tsui DC, Tutuc E, Shayegan M.

Phys Rev Lett. 2007 Sep 28;99(13):136804. Epub 2007 Sep 26.

PMID:
17930621
43.

Realization of a linear germanium nanowire p-n junction.

Tutuc E, Appenzeller J, Reuter MC, Guha S.

Nano Lett. 2006 Sep;6(9):2070-4.

PMID:
16968027
44.

Spin-dependent resistivity at transitions between integer quantum hall states.

Vakili K, Shkolnikov YP, Tutuc E, Bishop NC, De Poortere EP, Shayegan M.

Phys Rev Lett. 2005 May 6;94(17):176402. Epub 2005 May 4.

PMID:
15904319
45.

Thermopower of interacting GaAs bilayer hole systems in the reentrant insulating phase near nu=1.

Faniel S, Tutuc E, De Poortere EP, Gustin C, Vlad A, Melinte S, Shayegan M, Bayot V.

Phys Rev Lett. 2005 Feb 4;94(4):046802. Epub 2005 Feb 2.

PMID:
15783582
46.

Spin polarization dependence of the coulomb drag at large r(s).

Pillarisetty R, Noh H, Tutuc E, Poortere EP, Tsui DC, Shayegan M.

Phys Rev Lett. 2005 Jan 14;94(1):016807. Epub 2005 Jan 11.

PMID:
15698117
47.

Ballistic electron transport in AlAs quantum wells.

Gunawan O, Shkolnikov YP, Poortere EP, Tutuc E, Shayegan M.

Phys Rev Lett. 2004 Dec 10;93(24):246603. Epub 2004 Dec 8.

PMID:
15697841
48.

Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing.

Tutuc E, Shayegan M, Huse DA.

Phys Rev Lett. 2004 Jul 16;93(3):036802. Epub 2004 Jul 12.

PMID:
15323852
49.

Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells.

Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M.

Phys Rev Lett. 2004 Jun 4;92(22):226401. Epub 2004 Jun 1.

PMID:
15245241
50.

Realization of an interacting two-valley AlAs bilayer system.

Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M.

Phys Rev Lett. 2004 May 7;92(18):186404. Epub 2004 May 6.

PMID:
15169516

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