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Items: 1 to 50 of 93

1.

Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor.

Koch M, Keizer JG, Pakkiam P, Keith D, House MG, Peretz E, Simmons MY.

Nat Nanotechnol. 2019 Jan 7. doi: 10.1038/s41565-018-0338-1. [Epub ahead of print]

PMID:
30617309
2.

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

van der Heijden J, Kobayashi T, House MG, Salfi J, Barraud S, Laviéville R, Simmons MY, Rogge S.

Sci Adv. 2018 Dec 7;4(12):eaat9199. doi: 10.1126/sciadv.aat9199. eCollection 2018 Dec.

3.

Addressable electron spin resonance using donors and donor molecules in silicon.

Hile SJ, Fricke L, House MG, Peretz E, Chen CY, Wang Y, Broome M, Gorman SK, Keizer JG, Rahman R, Simmons MY.

Sci Adv. 2018 Jul 13;4(7):eaaq1459. doi: 10.1126/sciadv.aaq1459. eCollection 2018 Jul.

4.

Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon.

Pakkiam P, House MG, Koch M, Simmons MY.

Nano Lett. 2018 Jul 11;18(7):4081-4085. doi: 10.1021/acs.nanolett.8b00006. Epub 2018 Jun 4.

PMID:
29792333
5.

Two-electron spin correlations in precision placed donors in silicon.

Broome MA, Gorman SK, House MG, Hile SJ, Keizer JG, Keith D, Hill CD, Watson TF, Baker WJ, Hollenberg LCL, Simmons MY.

Nat Commun. 2018 Mar 7;9(1):980. doi: 10.1038/s41467-018-02982-x.

6.

High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon.

Broome MA, Watson TF, Keith D, Gorman SK, House MG, Keizer JG, Hile SJ, Baker W, Simmons MY.

Phys Rev Lett. 2017 Jul 28;119(4):046802. doi: 10.1103/PhysRevLett.119.046802. Epub 2017 Jul 25.

PMID:
29341777
7.

Atomically engineered electron spin lifetimes of 30 s in silicon.

Watson TF, Weber B, Hsueh YL, Hollenberg LLC, Rahman R, Simmons MY.

Sci Adv. 2017 Mar 31;3(3):e1602811. doi: 10.1126/sciadv.1602811. eCollection 2017 Mar.

8.

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A.

Sci Rep. 2017 May 4;7:46670. doi: 10.1038/srep46670.

9.

Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.

Tettamanzi GC, Hile SJ, House MG, Fuechsle M, Rogge S, Simmons MY.

ACS Nano. 2017 Mar 28;11(3):2444-2451. doi: 10.1021/acsnano.6b06362. Epub 2016 Nov 17. Erratum in: ACS Nano. 2017 Mar 28;11(3):3420.

10.

Correction to Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.

Tettamanzi GC, Hile SJ, House MG, Fuechsle M, Rogge S, Simmons MY.

ACS Nano. 2017 Mar 28;11(3):3420. doi: 10.1021/acsnano.6b08154. Epub 2017 Feb 27. No abstract available.

11.

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.

Cooil SP, Mazzola F, Klemm HW, Peschel G, Niu YR, Zakharov AA, Simmons MY, Schmidt T, Evans DA, Miwa JA, Wells JW.

ACS Nano. 2017 Feb 28;11(2):1683-1688. doi: 10.1021/acsnano.6b07359. Epub 2017 Feb 13.

PMID:
28182399
12.

Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques.

Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R.

Sci Rep. 2016 Nov 30;6:38120. doi: 10.1038/srep38120. No abstract available.

13.

Characterizing Si:P quantum dot qubits with spin resonance techniques.

Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R.

Sci Rep. 2016 Aug 23;6:31830. doi: 10.1038/srep31830. Erratum in: Sci Rep. 2016 Nov 30;6:38120.

14.

Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon.

Shamim S, Weber B, Thompson DW, Simmons MY, Ghosh A.

Nano Lett. 2016 Sep 14;16(9):5779-84. doi: 10.1021/acs.nanolett.6b02513. Epub 2016 Aug 23.

PMID:
27525390
15.

Spatial metrology of dopants in silicon with exact lattice site precision.

Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC.

Nat Nanotechnol. 2016 Sep;11(9):763-8. doi: 10.1038/nnano.2016.83. Epub 2016 Jun 6.

PMID:
27271965
16.

Quantum simulation of the Hubbard model with dopant atoms in silicon.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S.

Nat Commun. 2016 Apr 20;7:11342. doi: 10.1038/ncomms11342.

17.

Reaction paths of phosphine dissociation on silicon (001).

Warschkow O, Curson NJ, Schofield SR, Marks NA, Wilson HF, Radny MW, Smith PV, Reusch TC, McKenzie DR, Simmons MY.

J Chem Phys. 2016 Jan 7;144(1):014705. doi: 10.1063/1.4939124.

PMID:
26747816
18.

A surface code quantum computer in silicon.

Hill CD, Peretz E, Hile SJ, House MG, Fuechsle M, Rogge S, Simmons MY, Hollenberg LC.

Sci Adv. 2015 Oct 30;1(9):e1500707. doi: 10.1126/sciadv.1500707. eCollection 2015 Oct.

19.

Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.

Keizer JG, Koelling S, Koenraad PM, Simmons MY.

ACS Nano. 2015 Dec 22;9(12):12537-41. doi: 10.1021/acsnano.5b06299. Epub 2015 Nov 20.

PMID:
26568129
20.

High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.

Watson TF, Weber B, House MG, Büch H, Simmons MY.

Phys Rev Lett. 2015 Oct 16;115(16):166806. doi: 10.1103/PhysRevLett.115.166806. Epub 2015 Oct 16.

PMID:
26550896
21.

Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots.

House MG, Kobayashi T, Weber B, Hile SJ, Watson TF, van der Heijden J, Rogge S, Simmons MY.

Nat Commun. 2015 Nov 9;6:8848. doi: 10.1038/ncomms9848.

22.

Bottom-up assembly of metallic germanium.

Scappucci G, Klesse WM, Yeoh LA, Carter DJ, Warschkow O, Marks NA, Jaeger DL, Capellini G, Simmons MY, Hamilton AR.

Sci Rep. 2015 Aug 10;5:12948. doi: 10.1038/srep12948.

23.

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

Keizer JG, McKibbin SR, Simmons MY.

ACS Nano. 2015 Jul 28;9(7):7080-4. doi: 10.1021/acsnano.5b01638. Epub 2015 Jun 24.

PMID:
26083628
24.

Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires.

Weber B, Ryu H, Tan YH, Klimeck G, Simmons MY.

Phys Rev Lett. 2014 Dec 12;113(24):246802. Epub 2014 Dec 10.

PMID:
25541793
25.

Spin-lattice relaxation times of single donors and donor clusters in silicon.

Hsueh YL, Büch H, Tan Y, Wang Y, Hollenberg LC, Klimeck G, Simmons MY, Rahman R.

Phys Rev Lett. 2014 Dec 12;113(24):246406. Epub 2014 Dec 11.

PMID:
25541787
26.

Noncollinear paramagnetism of a GaAs two-dimensional hole system.

Yeoh LA, Srinivasan A, Klochan O, Winkler R, Zülicke U, Simmons MY, Ritchie DA, Pepper M, Hamilton AR.

Phys Rev Lett. 2014 Dec 5;113(23):236401. Epub 2014 Dec 3.

PMID:
25526140
27.

A tight-binding study of single-atom transistors.

Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G.

Small. 2015 Jan 21;11(3):374-81. doi: 10.1002/smll.201400724. Epub 2014 Oct 8.

PMID:
25293353
28.

Determining the electronic confinement of a subsurface metallic state.

Mazzola F, Edmonds MT, Høydalsvik K, Carter DJ, Marks NA, Cowie BC, Thomsen L, Miwa J, Simmons MY, Wells JW.

ACS Nano. 2014 Oct 28;8(10):10223-8. doi: 10.1021/nn5045239. Epub 2014 Oct 3.

PMID:
25243326
29.

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A.

Phys Rev Lett. 2014 Jun 13;112(23):236602. Epub 2014 Jun 13.

PMID:
24972220
30.

Spin blockade and exchange in Coulomb-confined silicon double quantum dots.

Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY.

Nat Nanotechnol. 2014 Jun;9(6):430-5. doi: 10.1038/nnano.2014.63. Epub 2014 Apr 13.

PMID:
24727686
31.

Spatially resolving valley quantum interference of a donor in silicon.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S.

Nat Mater. 2014 Jun;13(6):605-10. doi: 10.1038/nmat3941. Epub 2014 Apr 6.

PMID:
24705384
32.

Transport in asymmetrically coupled donor-based silicon triple quantum dots.

Watson TF, Weber B, Miwa JA, Mahapatra S, Heijnen RM, Simmons MY.

Nano Lett. 2014;14(4):1830-5. doi: 10.1021/nl4045026. Epub 2014 Mar 24.

PMID:
24661142
33.

Lithography and doping in strained Si towards atomically precise device fabrication.

Lee WC, McKibbin SR, Thompson DL, Xue K, Scappucci G, Bishop N, Celler GK, Carroll MS, Simmons MY.

Nanotechnology. 2014 Apr 11;25(14):145302. doi: 10.1088/0957-4484/25/14/145302. Epub 2014 Mar 14.

PMID:
24633016
34.

Valley splitting in a silicon quantum device platform.

Miwa JA, Warschkow O, Carter DJ, Marks NA, Mazzola F, Simmons MY, Wells JW.

Nano Lett. 2014 Mar 12;14(3):1515-9. doi: 10.1021/nl404738j. Epub 2014 Mar 3.

PMID:
24571617
35.

Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.

Mattoni G, Klesse WM, Capellini G, Simmons MY, Scappucci G.

ACS Nano. 2013 Dec 23;7(12):11310-6. doi: 10.1021/nn4051634. Epub 2013 Nov 13.

PMID:
24224765
36.

Atomistic modeling of metallic nanowires in silicon.

Ryu H, Lee S, Weber B, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G.

Nanoscale. 2013 Sep 21;5(18):8666-74. doi: 10.1039/c3nr01796f.

PMID:
23897026
37.

Spin readout and addressability of phosphorus-donor clusters in silicon.

Büch H, Mahapatra S, Rahman R, Morello A, Simmons MY.

Nat Commun. 2013;4:2017. doi: 10.1038/ncomms3017.

PMID:
23774081
38.

Direct measurement of the band structure of a buried two-dimensional electron gas.

Miwa JA, Hofmann P, Simmons MY, Wells JW.

Phys Rev Lett. 2013 Mar 29;110(13):136801. Epub 2013 Mar 25.

PMID:
23581353
39.

Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas.

Huang TY, Liang CT, Chen YF, Simmons MY, Kim GH, Ritchie DA.

Nanoscale Res Lett. 2013 Mar 25;8(1):138. doi: 10.1186/1556-276X-8-138.

40.

New avenues to an old material: controlled nanoscale doping of germanium.

Scappucci G, Capellini G, Klesse WM, Simmons MY.

Nanoscale. 2013 Apr 7;5(7):2600-15. doi: 10.1039/c3nr34258a.

PMID:
23455600
41.

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

McKibbin SR, Scappucci G, Pok W, Simmons MY.

Nanotechnology. 2013 Feb 1;24(4):045303. doi: 10.1088/0957-4484/24/4/045303. Epub 2013 Jan 4.

PMID:
23291418
42.

n-type doping of germanium from phosphine: early stages resolved at the atomic level.

Scappucci G, Warschkow O, Capellini G, Klesse WM, McKenzie DR, Simmons MY.

Phys Rev Lett. 2012 Aug 17;109(7):076101. Epub 2012 Aug 13.

PMID:
23006385
43.

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport.

Scappucci G, Klesse WM, Hamilton AR, Capellini G, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons MY.

Nano Lett. 2012 Sep 12;12(9):4953-9. doi: 10.1021/nl302558b. Epub 2012 Sep 4.

PMID:
22935029
44.

Engineering independent electrostatic control of atomic-scale (∼4 nm) silicon double quantum dots.

Weber B, Mahapatra S, Watson TF, Simmons MY.

Nano Lett. 2012 Aug 8;12(8):4001-6. doi: 10.1021/nl3012903. Epub 2012 Jul 12.

PMID:
22686257
45.

A single-atom transistor.

Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY.

Nat Nanotechnol. 2012 Feb 19;7(4):242-6. doi: 10.1038/nnano.2012.21.

PMID:
22343383
46.

Ohm's law survives to the atomic scale.

Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY.

Science. 2012 Jan 6;335(6064):64-7. doi: 10.1126/science.1214319.

47.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

Polley CM, Clarke WR, Simmons MY.

Nanoscale Res Lett. 2011 Oct 3;6:538. doi: 10.1186/1556-276X-6-538.

48.

Charge sensing of precisely positioned p donors in Si.

Mahapatra S, Büch H, Simmons MY.

Nano Lett. 2011 Oct 12;11(10):4376-81. doi: 10.1021/nl2025079. Epub 2011 Sep 28.

PMID:
21919458
49.

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers.

Scappucci G, Capellini G, Klesse WM, Simmons MY.

Nanotechnology. 2011 Sep 16;22(37):375203. doi: 10.1088/0957-4484/22/37/375203. Epub 2011 Aug 22.

PMID:
21857100
50.

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY.

Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10.

PMID:
21553900

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