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Items: 21

1.

Gate-controlled quantum dots and superconductivity in planar germanium.

Hendrickx NW, Franke DP, Sammak A, Kouwenhoven M, Sabbagh D, Yeoh L, Li R, Tagliaferri MLV, Virgilio M, Capellini G, Scappucci G, Veldhorst M.

Nat Commun. 2018 Jul 19;9(1):2835. doi: 10.1038/s41467-018-05299-x.

2.

Strong spin-photon coupling in silicon.

Samkharadze N, Zheng G, Kalhor N, Brousse D, Sammak A, Mendes UC, Blais A, Scappucci G, Vandersypen LMK.

Science. 2018 Mar 9;359(6380):1123-1127. doi: 10.1126/science.aar4054. Epub 2018 Jan 25.

PMID:
29371427
3.

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A.

Sci Rep. 2017 May 4;7:46670. doi: 10.1038/srep46670.

4.

Bottom-up assembly of metallic germanium.

Scappucci G, Klesse WM, Yeoh LA, Carter DJ, Warschkow O, Marks NA, Jaeger DL, Capellini G, Simmons MY, Hamilton AR.

Sci Rep. 2015 Aug 10;5:12948. doi: 10.1038/srep12948.

5.

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A.

Phys Rev Lett. 2014 Jun 13;112(23):236602. Epub 2014 Jun 13.

PMID:
24972220
6.

Lithography and doping in strained Si towards atomically precise device fabrication.

Lee WC, McKibbin SR, Thompson DL, Xue K, Scappucci G, Bishop N, Celler GK, Carroll MS, Simmons MY.

Nanotechnology. 2014 Apr 11;25(14):145302. doi: 10.1088/0957-4484/25/14/145302. Epub 2014 Mar 14.

PMID:
24633016
7.

Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.

Mattoni G, Klesse WM, Capellini G, Simmons MY, Scappucci G.

ACS Nano. 2013 Dec 23;7(12):11310-6. doi: 10.1021/nn4051634. Epub 2013 Nov 13.

PMID:
24224765
8.

Exploring the limits of N-type ultra-shallow junction formation.

Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M.

ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30.

PMID:
23721101
9.

New avenues to an old material: controlled nanoscale doping of germanium.

Scappucci G, Capellini G, Klesse WM, Simmons MY.

Nanoscale. 2013 Apr 7;5(7):2600-15. doi: 10.1039/c3nr34258a.

PMID:
23455600
10.

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

McKibbin SR, Scappucci G, Pok W, Simmons MY.

Nanotechnology. 2013 Feb 1;24(4):045303. doi: 10.1088/0957-4484/24/4/045303. Epub 2013 Jan 4.

PMID:
23291418
11.

n-type doping of germanium from phosphine: early stages resolved at the atomic level.

Scappucci G, Warschkow O, Capellini G, Klesse WM, McKenzie DR, Simmons MY.

Phys Rev Lett. 2012 Aug 17;109(7):076101. Epub 2012 Aug 13.

PMID:
23006385
12.

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport.

Scappucci G, Klesse WM, Hamilton AR, Capellini G, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons MY.

Nano Lett. 2012 Sep 12;12(9):4953-9. doi: 10.1021/nl302558b. Epub 2012 Sep 4.

PMID:
22935029
13.

Over-expression of miR-223 in T-lymphocytes of early rheumatoid arthritis patients.

Sebastiani GD, Fulci V, Niccolini S, Giannitti C, Bugatti S, Minisola G, Barnaba V, Scappucci G, Macino G, Galeazzi M.

Clin Exp Rheumatol. 2011 Nov-Dec;29(6):1058-9. Epub 2011 Dec 22. No abstract available.

PMID:
22032299
14.

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers.

Scappucci G, Capellini G, Klesse WM, Simmons MY.

Nanotechnology. 2011 Sep 16;22(37):375203. doi: 10.1088/0957-4484/22/37/375203. Epub 2011 Aug 22.

PMID:
21857100
15.

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY.

Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10.

PMID:
21553900
16.

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices.

Klesse WM, Scappucci G, Capellini G, Simmons MY.

Nanotechnology. 2011 Apr 8;22(14):145604. doi: 10.1088/0957-4484/22/14/145604. Epub 2011 Mar 3.

PMID:
21368353
17.

Gene expression profiling identifies a subset of adult T-cell acute lymphoblastic leukemia with myeloid-like gene features and over-expression of miR-223.

Chiaretti S, Messina M, Tavolaro S, Zardo G, Elia L, Vitale A, Fatica A, Gorello P, Piciocchi A, Scappucci G, Bozzoni I, Fozza C, Candoni A, Guarini A, Foà R.

Haematologica. 2010 Jul;95(7):1114-21. doi: 10.3324/haematol.2009.015099. Epub 2010 Apr 23.

18.

miR-223 is overexpressed in T-lymphocytes of patients affected by rheumatoid arthritis.

Fulci V, Scappucci G, Sebastiani GD, Giannitti C, Franceschini D, Meloni F, Colombo T, Citarella F, Barnaba V, Minisola G, Galeazzi M, Macino G.

Hum Immunol. 2010 Feb;71(2):206-11. doi: 10.1016/j.humimm.2009.11.008. Epub 2009 Nov 18.

PMID:
19931339
19.

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy.

Scappucci G, Capellini G, Lee WC, Simmons MY.

Nanotechnology. 2009 Dec 9;20(49):495302. doi: 10.1088/0957-4484/20/49/495302. Epub 2009 Nov 6.

PMID:
19893153
20.

Realization of atomically controlled dopant devices in silicon.

Ruess FJ, Pok W, Reusch TC, Butcher MJ, Goh KE, Oberbeck L, Scappucci G, Hamilton AR, Simmons MY.

Small. 2007 Apr;3(4):563-7. No abstract available.

PMID:
17340667
21.

Deletion of the glucose-6-phosphate dehydrogenase gene KlZWF1 affects both fermentative and respiratory metabolism in Kluyveromyces lactis.

Saliola M, Scappucci G, De Maria I, Lodi T, Mancini P, Falcone C.

Eukaryot Cell. 2007 Jan;6(1):19-27. Epub 2006 Nov 3.

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