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Items: 7

1.

Reaction paths of phosphine dissociation on silicon (001).

Warschkow O, Curson NJ, Schofield SR, Marks NA, Wilson HF, Radny MW, Smith PV, Reusch TC, McKenzie DR, Simmons MY.

J Chem Phys. 2016 Jan 7;144(1):014705. doi: 10.1063/1.4939124.

PMID:
26747816
2.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Scholz BJ, Frischeisen J, Jaeger A, Setz DS, Reusch TC, Brütting W.

Opt Express. 2012 Mar 12;20 Suppl 2:A205-12. doi: 10.1364/OE.20.00A205.

PMID:
22418669
3.

Ohm's law survives to the atomic scale.

Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY.

Science. 2012 Jan 6;335(6064):64-7. doi: 10.1126/science.1214319.

4.

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon.

Fuhrer A, Füchsle M, Reusch TC, Weber B, Simmons MY.

Nano Lett. 2009 Feb;9(2):707-10. doi: 10.1021/nl803196f.

PMID:
19119868
5.

Single P and As dopants in the Si(001) surface.

Radny MW, Smith PV, Reusch TC, Warschkow O, Marks NA, Shi HQ, McKenzie DR, Schofield SR, Curson NJ, Simmons MY.

J Chem Phys. 2007 Nov 14;127(18):184706.

PMID:
18020657
6.

Realization of atomically controlled dopant devices in silicon.

Ruess FJ, Pok W, Reusch TC, Butcher MJ, Goh KE, Oberbeck L, Scappucci G, Hamilton AR, Simmons MY.

Small. 2007 Apr;3(4):563-7. No abstract available.

PMID:
17340667
7.

Origin of Schottky barriers in gold contacts on GaAs110.

Reusch TC, Wenderoth M, Winking L, Quaas N, Ulbrich RG.

Phys Rev Lett. 2004 Nov 12;93(20):206801. Epub 2004 Nov 10.

PMID:
15600951

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