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Items: 8

1.

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials.

Shim J, Bae SH, Kong W, Lee D, Qiao K, Nezich D, Park YJ, Zhao R, Sundaram S, Li X, Yeon H, Choi C, Kum H, Yue R, Zhou G, Ou Y, Lee K, Moodera J, Zhao X, Ahn JH, Hinkle C, Ougazzaden A, Kim J.

Science. 2018 Nov 9;362(6415):665-670. doi: 10.1126/science.aat8126. Epub 2018 Oct 11.

PMID:
30309906
2.

Polarity governs atomic interaction through two-dimensional materials.

Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, Bae SH, Rajan S, Shao-Horn Y, Cho K, Ougazzaden A, Grossman JC, Kim J.

Nat Mater. 2018 Nov;17(11):999-1004. doi: 10.1038/s41563-018-0176-4. Epub 2018 Oct 8.

PMID:
30297812
3.

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications.

Ayari T, Bishop C, Jordan MB, Sundaram S, Li X, Alam S, ElGmili Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A.

Sci Rep. 2017 Nov 9;7(1):15212. doi: 10.1038/s41598-017-15065-6.

4.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

Li X, Jordan MB, Ayari T, Sundaram S, El Gmili Y, Alam S, Alam M, Patriarche G, Voss PL, Paul Salvestrini J, Ougazzaden A.

Sci Rep. 2017 Apr 11;7(1):786. doi: 10.1038/s41598-017-00865-7.

5.

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.

Puybaret R, Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A.

Nanotechnology. 2017 May 12;28(19):195304. doi: 10.1088/1361-6528/aa6a43. Epub 2017 Mar 30.

PMID:
28358724
6.

Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

Halfaya Y, Bishop C, Soltani A, Sundaram S, Aubry V, Voss PL, Salvestrini JP, Ougazzaden A.

Sensors (Basel). 2016 Feb 23;16(3):273. doi: 10.3390/s16030273.

7.

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates.

Sundaram S, Li X, El Gmili Y, Bonanno PL, Puybaret R, Pradalier C, Pantzas K, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A.

Nanotechnology. 2016 Mar 18;27(11):115602. doi: 10.1088/0957-4484/27/11/115602. Epub 2016 Feb 15.

PMID:
26878255
8.

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy.

Pantzas K, Patriarche G, Troadec D, Gautier S, Moudakir T, Suresh S, Largeau L, Mauguin O, Voss PL, Ougazzaden A.

Nanotechnology. 2012 Nov 16;23(45):455707. doi: 10.1088/0957-4484/23/45/455707. Epub 2012 Oct 22.

PMID:
23089619

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