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Items: 12

1.

Standing at odds: mutated RAS and hematopoietic stem cells.

Nafria M, Bonifer C.

Haematologica. 2019 Nov;104(11):2125-2128. doi: 10.3324/haematol.2019.230029. No abstract available.

2.

Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme.

Pedró M, Martín-Martínez J, Maestro-Izquierdo M, Rodríguez R, Nafría M.

Materials (Basel). 2019 Oct 24;12(21). pii: E3482. doi: 10.3390/ma12213482.

3.

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization.

Vescio G, Martín G, Crespo-Yepes A, Claramunt S, Alonso D, López-Vidrier J, Estradé S, Porti M, Rodríguez R, Peiró F, Cornet A, Cirera A, Nafría M.

ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23659-23666. doi: 10.1021/acsami.9b01731. Epub 2019 Jun 21.

PMID:
31180626
4.

Fine-Tuning Mybl2 Is Required for Proper Mesenchymal-to-Epithelial Transition during Somatic Reprogramming.

Ward C, Volpe G, Cauchy P, Ptasinska A, Almaghrabi R, Blakemore D, Nafria M, Kestner D, Frampton J, Murphy G, Buganim Y, Kaji K, García P.

Cell Rep. 2018 Aug 7;24(6):1496-1511.e8. doi: 10.1016/j.celrep.2018.07.026.

5.

Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid.

Berthold T, Benstetter G, Frammelsberger W, Rodríguez R, Nafría M.

Scanning. 2017 Jul 26;2017:6286595. doi: 10.1155/2017/6286595. eCollection 2017.

6.

Current-limiting and ultrafast system for the characterization of resistive random access memories.

Diaz-Fortuny J, Maestro M, Martin-Martinez J, Crespo-Yepes A, Rodriguez R, Nafria M, Aymerich X.

Rev Sci Instrum. 2016 Jun;87(6):064705. doi: 10.1063/1.4954973.

PMID:
27370480
7.

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.

Pérez-Tomás A, Catalàn G, Fontserè A, Iglesias V, Chen H, Gammon PM, Jennings MR, Thomas M, Fisher CA, Sharma YK, Placidi M, Chmielowska M, Chenot S, Porti M, Nafría M, Cordier Y.

Nanotechnology. 2015 Mar 20;26(11):115203. doi: 10.1088/0957-4484/26/11/115203. Epub 2015 Feb 26.

PMID:
25719801
8.

Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

Lanza M, Bayerl A, Gao T, Porti M, Nafria M, Jing GY, Zhang YF, Liu ZF, Duan HL.

Adv Mater. 2013 Mar 13;25(10):1440-4. doi: 10.1002/adma.201204380. Epub 2012 Dec 27.

PMID:
23280635
9.

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M.

Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12.

PMID:
22971927
10.

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics.

Lanza M, Iglesias V, Porti M, Nafria M, Aymerich X.

Nanoscale Res Lett. 2011 Jan 31;6(1):108. doi: 10.1186/1556-276X-6-108.

11.

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces.

Lanza M, Porti M, Nafría M, Aymerich X, Whittaker E, Hamilton B.

Rev Sci Instrum. 2010 Oct;81(10):106110. doi: 10.1063/1.3491956.

PMID:
21034138
12.

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter.

Aguilera L, Lanza M, Porti M, Grifoll J, Nafría M, Aymerich X.

Rev Sci Instrum. 2008 Jul;79(7):073701. doi: 10.1063/1.2952058.

PMID:
18681702

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