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Proc Natl Acad Sci U S A. 2019 Jun 25;116(26):12638-12641. doi: 10.1073/pnas.1901245116. Epub 2019 Jun 10.

Transport gap in SmB6 protected against disorder.

Author information

1
Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040; eohyung@umich.edu zfisk@uci.edu.
2
Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040.
3
Los Alamos National Laboratory, Los Alamos, NM 87545.
4
Department of Physics and Astronomy, University of California, Irvine, CA 92697 eohyung@umich.edu zfisk@uci.edu.

Abstract

The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7-10 orders of magnitude, suggesting that [Formula: see text] is an ideal insulator that is immune to disorder.

KEYWORDS:

heavy-fermion materials; semiconductors; topological insulator

PMID:
31182612
PMCID:
PMC6601007
[Available on 2019-12-10]
DOI:
10.1073/pnas.1901245116

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