Format
Sort by
Items per page

Send to

Choose Destination

Search results

Items: 48

1.

Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO x Reduction.

Kavrik MS, Ercius P, Cheung J, Tang K, Wang Q, Fruhberger B, Kim M, Taur Y, McIntyre PC, Kummel AC.

ACS Appl Mater Interfaces. 2019 Apr 24;11(16):15111-15121. doi: 10.1021/acsami.8b22362. Epub 2019 Apr 15.

PMID:
30938163
2.

Dynamic thermal emission control with InAs-based plasmonic metasurfaces.

Park J, Kang JH, Liu X, Maddox SJ, Tang K, McIntyre PC, Bank SR, Brongersma ML.

Sci Adv. 2018 Dec 7;4(12):eaat3163. doi: 10.1126/sciadv.aat3163. eCollection 2018 Dec.

3.

The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes.

Tang-Kong R, Winter R, Brock R, Tracy J, Eizenberg M, Dauskardt RH, McIntyre PC.

ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37103-37109. doi: 10.1021/acsami.8b13576. Epub 2018 Oct 22.

PMID:
30346686
4.

Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging.

Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim M, Fruhberger B, Taur Y, McIntyre PC, Kummel AC.

ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30794-30802. doi: 10.1021/acsami.8b06547. Epub 2018 Aug 27.

PMID:
30073827
5.

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.

Zhang L, Janotti A, Meng AC, Tang K, Van de Walle CG, McIntyre PC.

ACS Appl Mater Interfaces. 2018 Feb 14;10(6):5140-5146. doi: 10.1021/acsami.7b19619. Epub 2018 Jan 30.

PMID:
29369616
6.

Thermal Stability of Mixed Cation Metal Halide Perovskites in Air.

Tan W, Bowring AR, Meng AC, McGehee MD, McIntyre PC.

ACS Appl Mater Interfaces. 2018 Feb 14;10(6):5485-5491. doi: 10.1021/acsami.7b15263. Epub 2018 Jan 30.

PMID:
29328620
7.

Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS.

ACS Appl Mater Interfaces. 2017 Dec 6;9(48):41863-41870. doi: 10.1021/acsami.7b12886. Epub 2017 Nov 22.

PMID:
29124928
8.

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.

Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal H, Palumbo F, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, Lanza M.

ACS Appl Mater Interfaces. 2017 Nov 15;9(45):39758-39770. doi: 10.1021/acsami.7b10948. Epub 2017 Nov 1.

PMID:
29039199
9.

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H.

Sci Rep. 2017 Aug 29;7(1):9769. doi: 10.1038/s41598-017-09888-6.

10.

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces.

Meng AC, Tang K, Braun MR, Zhang L, McIntyre PC.

Nanotechnology. 2017 Oct 13;28(41):415704. doi: 10.1088/1361-6528/aa842b. Epub 2017 Aug 4.

PMID:
28776501
11.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Tang K, Meng AC, Hui F, Shi Y, Petach T, Hitzman C, Koh AL, Goldhaber-Gordon D, Lanza M, McIntyre PC.

Nano Lett. 2017 Jul 12;17(7):4390-4399. doi: 10.1021/acs.nanolett.7b01460. Epub 2017 Jun 26.

PMID:
28604007
12.

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110).

Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC.

J Chem Phys. 2017 Feb 7;146(5):052820. doi: 10.1063/1.4975081.

PMID:
28178835
13.

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

Tang K, Palumbo FR, Zhang L, Droopad R, McIntyre PC.

ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7819-7825. doi: 10.1021/acsami.6b16232. Epub 2017 Feb 20.

PMID:
28152310
14.

Core-Shell Germanium/Germanium-Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence.

Meng AC, Fenrich CS, Braun MR, McVittie JP, Marshall AF, Harris JS, McIntyre PC.

Nano Lett. 2016 Dec 14;16(12):7521-7529. Epub 2016 Nov 10.

PMID:
27802056
15.

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Tang K, Meng AC, Droopad R, McIntyre PC.

ACS Appl Mater Interfaces. 2016 Nov 9;8(44):30601-30607. Epub 2016 Oct 31.

PMID:
27758108
16.

Characterization of the photocurrents generated by the laser of atomic force microscopes.

Ji Y, Hui F, Shi Y, Iglesias V, Lewis D, Niu J, Long S, Liu M, Hofer A, Frammelsberger W, Benstetter G, Scheuermann A, McIntyre PC, Lanza M.

Rev Sci Instrum. 2016 Aug;87(8):083703. doi: 10.1063/1.4960597.

PMID:
27587127
17.

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes.

Hendricks OL, Scheuermann AG, Schmidt M, Hurley PK, McIntyre PC, Chidsey CE.

ACS Appl Mater Interfaces. 2016 Sep 14;8(36):23763-73. doi: 10.1021/acsami.6b08558. Epub 2016 Sep 1.

PMID:
27548719
18.

Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

Negara MA, Kitano M, Long RD, McIntyre PC.

ACS Appl Mater Interfaces. 2016 Aug 17;8(32):21089-94. doi: 10.1021/acsami.6b03862. Epub 2016 Aug 8.

PMID:
27459343
19.

Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells.

Scheuermann AG, McIntyre PC.

J Phys Chem Lett. 2016 Jul 21;7(14):2867-78. doi: 10.1021/acs.jpclett.6b00631. Epub 2016 Jul 15.

PMID:
27359352
20.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Zhang L, Guo Y, Hassan VV, Tang K, Foad MA, Woicik JC, Pianetta P, Robertson J, McIntyre PC.

ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19110-8. doi: 10.1021/acsami.6b03331. Epub 2016 Jul 12.

PMID:
27345195
21.

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

Winter R, Shekhter P, Tang K, Floreano L, Verdini A, McIntyre PC, Eizenberg M.

ACS Appl Mater Interfaces. 2016 Jul 6;8(26):16979-84. doi: 10.1021/acsami.6b02957. Epub 2016 Jun 23.

PMID:
27282201
22.

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes.

Scheuermann AG, Lawrence JP, Meng AC, Tang K, Hendricks OL, Chidsey CE, McIntyre PC.

ACS Appl Mater Interfaces. 2016 Jun 15;8(23):14596-603. doi: 10.1021/acsami.6b03688. Epub 2016 May 31.

PMID:
27196628
23.

Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance.

Satterthwaite PF, Scheuermann AG, Hurley PK, Chidsey CE, McIntyre PC.

ACS Appl Mater Interfaces. 2016 May 25;8(20):13140-9. doi: 10.1021/acsami.6b03029. Epub 2016 May 16.

PMID:
27096845
24.

Spontaneous, Defect-Free Kinking via Capillary Instability during Vapor-Liquid-Solid Nanowire Growth.

Li Y, Wang Y, Ryu S, Marshall AF, Cai W, McIntyre PC.

Nano Lett. 2016 Mar 9;16(3):1713-8. doi: 10.1021/acs.nanolett.5b04633. Epub 2016 Feb 10.

PMID:
26837774
25.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.

Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

26.

Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes.

Scheuermann AG, Lawrence JP, Kemp KW, Ito T, Walsh A, Chidsey CE, Hurley PK, McIntyre PC.

Nat Mater. 2016 Jan;15(1):99-105. doi: 10.1038/nmat4451. Epub 2015 Oct 19.

PMID:
26480231
27.

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC.

ACS Appl Mater Interfaces. 2015 Sep 23;7(37):20499-506. doi: 10.1021/acsami.5b06087. Epub 2015 Sep 9.

PMID:
26334784
28.

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

Zhernokletov DM, Negara MA, Long RD, Aloni S, Nordlund D, McIntyre PC.

ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12774-80. doi: 10.1021/acsami.5b01600. Epub 2015 Jun 2.

PMID:
25988586
29.

Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.

Byun YC, Choi S, An Y, McIntyre PC, Kim H.

ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7445. doi: 10.1021/acsami.5b02372. Epub 2015 Mar 30. No abstract available.

PMID:
25823007
30.

Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.

Byun YC, Choi S, An Y, McIntyre PC, Kim H.

ACS Appl Mater Interfaces. 2014 Jul 9;6(13):10482-8. doi: 10.1021/am502048d. Epub 2014 Jun 18. Erratum in: Chem Commun (Camb). 2015 Apr 25;51(32):7072. ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7445.

PMID:
24911531
31.

Ultrafast electron and phonon response of oriented and diameter-controlled germanium nanowire arrays.

Li Y, Clady R, Park J, Thombare SV, Schmidt TW, Brongersma ML, McIntyre PC.

Nano Lett. 2014 Jun 11;14(6):3427-31. doi: 10.1021/nl500953p. Epub 2014 May 19.

PMID:
24797453
32.

Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation.

Gunji M, Thombare SV, Hu S, McIntyre PC.

Nanotechnology. 2012 Sep 28;23(38):385603. doi: 10.1088/0957-4484/23/38/385603. Epub 2012 Sep 4.

PMID:
22947505
33.

Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells.

Hu S, Kawamura Y, Huang KC, Li Y, Marshall AF, Itoh KM, Brongersma ML, McIntyre PC.

Nano Lett. 2012 Mar 14;12(3):1385-91. doi: 10.1021/nl204053w. Epub 2012 Feb 24.

PMID:
22364183
34.

Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation.

Chen YW, Prange JD, Dühnen S, Park Y, Gunji M, Chidsey CE, McIntyre PC.

Nat Mater. 2011 Jun 19;10(7):539-44. doi: 10.1038/nmat3047.

PMID:
21685904
35.

Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth.

Marshall AF, Goldthorpe IA, Adhikari H, Koto M, Wang YC, Fu L, Olsson E, McIntyre PC.

Nano Lett. 2010 Sep 8;10(9):3302-6. doi: 10.1021/nl100913d.

PMID:
20687570
36.

Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon.

Koto M, Marshall AF, Goldthorpe IA, McIntyre PC.

Small. 2010 May 7;6(9):1032-7. doi: 10.1002/smll.200901764.

PMID:
20411571
37.

Single-crystal germanium layers grown on silicon by nanowire seeding.

Hu S, Leu PW, Marshall AF, McIntyre PC.

Nat Nanotechnol. 2009 Oct;4(10):649-53. doi: 10.1038/nnano.2009.233. Epub 2009 Aug 23.

PMID:
19809455
38.

Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires.

Goldthorpe IA, Marshall AF, McIntyre PC.

Nano Lett. 2009 Nov;9(11):3715-9. doi: 10.1021/nl9018148.

PMID:
19795838
39.

Gold removal from germanium nanowires.

Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE.

Langmuir. 2009 Aug 18;25(16):9473-9. doi: 10.1021/la900725b.

PMID:
19419180
40.

Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties.

Leu PW, Adhikari H, Koto M, Kim KH, Rouffignac Pd, Marshall AF, Gordon RG, Chidsey CE, McIntyre PC.

Nanotechnology. 2008 Dec 3;19(48):485705. doi: 10.1088/0957-4484/19/48/485705. Epub 2008 Nov 12.

PMID:
21836312
41.

Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays.

Goldthorpe IA, Marshall AF, McIntyre PC.

Nano Lett. 2008 Nov;8(11):4081-6. doi: 10.1021/nl802408y. Epub 2008 Oct 28.

PMID:
18954126
42.

Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature.

Adhikari H, Marshall AF, Goldthorpe IA, Chidsey CE, McIntyre PC.

ACS Nano. 2007 Dec;1(5):415-22. doi: 10.1021/nn7001486.

PMID:
19206662
43.

Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal.

Woodruff JH, Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CE.

Nano Lett. 2007 Jun;7(6):1637-42. Epub 2007 May 27.

PMID:
17530912
44.

ALD resist formed by vapor-deposited self-assembled monolayers.

Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF.

Langmuir. 2007 Jan 30;23(3):1160-5.

PMID:
17241027
45.

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si.

Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC.

Opt Lett. 2006 Sep 1;31(17):2565-7.

PMID:
16902620
46.

Germanium nanowire epitaxy: shape and orientation control.

Adhikari H, Marshall AF, Chidsey CE, McIntyre PC.

Nano Lett. 2006 Feb;6(2):318-23.

PMID:
16464057
47.

High-quality epitaxial growth of gamma -alumina films on alpha -alumina sapphire induced by ion-beam bombardment.

Yu N, McIntyre PC, Nastasi M, Sickafus KE.

Phys Rev B Condens Matter. 1995 Dec 15;52(24):17518-17522. No abstract available.

PMID:
9981183
48.

Current-voltage measurements of thin YBa2Cu3O6.9 films compared with a modified Ambegaokar-Halperin theory.

Liebenberg DH, Soulen RJ Jr, Francavilla TL, Fuller-Mora WW, McIntyre PC, Cima MJ.

Phys Rev B Condens Matter. 1995 May 1;51(17):11838-11847. No abstract available.

PMID:
9977926

Supplemental Content

Loading ...
Support Center