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Items: 4

1.

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides.

Mleczko MJ, Zhang C, Lee HR, Kuo HH, Magyari-Köpe B, Moore RG, Shen ZX, Fisher IR, Nishi Y, Pop E.

Sci Adv. 2017 Aug 11;3(8):e1700481. doi: 10.1126/sciadv.1700481. eCollection 2017 Aug.

2.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

Magyari-Köpe B, Tendulkar M, Park SG, Lee HD, Nishi Y.

Nanotechnology. 2011 Jun 24;22(25):254029. doi: 10.1088/0957-4484/22/25/254029. Epub 2011 May 16.

PMID:
21572196
3.

Self-diffusion rates in Al from combined first-principles and model-potential calculations.

Sandberg N, Magyari-Köpe B, Mattsson TR.

Phys Rev Lett. 2002 Aug 5;89(6):065901. Epub 2002 Jul 23.

PMID:
12190597
4.

Parametrization of perovskite structures: an ab initio study.

Magyari-Köpe B, Vitos L, Johansson B, Kollár J.

Acta Crystallogr B. 2001 Aug;57(Pt 4):491-6. Epub 2001 Jul 25.

PMID:
11468375

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