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Science. 2018 Jul 6;361(6397):60-63. doi: 10.1126/science.aao0290.

Observation of an environmentally insensitive solid-state spin defect in diamond.

Author information

1
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
2
Gemological Institute of America, New York, NY 10036, USA.
3
Element Six, Harwell OX11 0QR, UK.
4
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA. npdeleon@princeton.edu.

Abstract

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0 SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

PMID:
29976820
DOI:
10.1126/science.aao0290

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