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Items: 5

1.

Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device.

Kawasugi Y, Seki K, Tajima S, Pu J, Takenobu T, Yunoki S, Yamamoto HM, Kato R.

Sci Adv. 2019 May 10;5(5):eaav7282. doi: 10.1126/sciadv.aav7282. eCollection 2019 May.

2.

Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.

Sato Y, Kawasugi Y, Suda M, Yamamoto HM, Kato R.

Nano Lett. 2017 Feb 8;17(2):708-714. doi: 10.1021/acs.nanolett.6b03817. Epub 2017 Jan 10.

PMID:
28038313
3.

Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.

Kawasugi Y, Seki K, Edagawa Y, Sato Y, Pu J, Takenobu T, Yunoki S, Yamamoto HM, Kato R.

Nat Commun. 2016 Aug 5;7:12356. doi: 10.1038/ncomms12356.

4.

Strain-tunable superconducting field-effect transistor with an organic strongly-correlated electron system.

Suda M, Kawasugi Y, Minari T, Tsukagoshi K, Kato R, Yamamoto HM.

Adv Mater. 2014 Jun 4;26(21):3490-5. doi: 10.1002/adma.201305797. Epub 2014 Mar 24.

PMID:
24664491
5.

Field-induced carrier delocalization in the strain-induced mott insulating state of an organic superconductor.

Kawasugi Y, Yamamoto HM, Tajima N, Fukunaga T, Tsukagoshi K, Kato R.

Phys Rev Lett. 2009 Sep 11;103(11):116801. Epub 2009 Sep 8.

PMID:
19792389

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