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Items: 24

1.

Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy.

Gruart M, Jacopin G, Daudin B.

Nano Lett. 2019 Jul 10;19(7):4250-4256. doi: 10.1021/acs.nanolett.9b00023. Epub 2019 Jun 26.

PMID:
31241343
2.

Insights about the Absence of Rb Cation from the 3D Perovskite Lattice: Effect on the Structural, Morphological, and Photophysical Properties and Photovoltaic Performance.

Uchida R, Binet S, Arora N, Jacopin G, Alotaibi MH, Taubert A, Zakeeruddin SM, Dar MI, Graetzel M.

Small. 2018 Sep;14(36):e1802033. doi: 10.1002/smll.201802033. Epub 2018 Aug 9.

PMID:
30091843
3.

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

Dar MI, Jacopin G, Meloni S, Mattoni A, Arora N, Boziki A, Zakeeruddin SM, Rothlisberger U, Grätzel M.

Sci Adv. 2016 Oct 28;2(10):e1601156. eCollection 2016 Oct.

4.

Intrinsic and Extrinsic Stability of Formamidinium Lead Bromide Perovskite Solar Cells Yielding High Photovoltage.

Arora N, Dar MI, Abdi-Jalebi M, Giordano F, Pellet N, Jacopin G, Friend RH, Zakeeruddin SM, Grätzel M.

Nano Lett. 2016 Nov 9;16(11):7155-7162. Epub 2016 Oct 31.

PMID:
27776210
5.

Excitonic Diffusion in InGaN/GaN Core-Shell Nanowires.

Shahmohammadi M, Ganière JD, Zhang H, Ciechonski R, Vescovi G, Kryliouk O, Tchernycheva M, Jacopin G.

Nano Lett. 2016 Jan 13;16(1):243-9. doi: 10.1021/acs.nanolett.5b03611. Epub 2015 Dec 24.

PMID:
26674850
6.

Triazatruxene-Based Hole Transporting Materials for Highly Efficient Perovskite Solar Cells.

Rakstys K, Abate A, Dar MI, Gao P, Jankauskas V, Jacopin G, Kamarauskas E, Kazim S, Ahmad S, Grätzel M, Nazeeruddin MK.

J Am Chem Soc. 2015 Dec 30;137(51):16172-8. doi: 10.1021/jacs.5b11076. Epub 2015 Dec 14.

PMID:
26630459
7.

Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment.

Zhang H, Jacopin G, Neplokh V, Largeau L, Julien FH, Kryliouk O, Tchernycheva M.

Nanotechnology. 2015 Nov 20;26(46):465203. doi: 10.1088/0957-4484/26/46/465203. Epub 2015 Oct 28.

PMID:
26508299
8.

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O.

Nanoscale. 2015 Jul 21;7(27):11692-701. doi: 10.1039/c5nr00623f. Epub 2015 Jun 23.

PMID:
26100114
9.

Biexcitonic molecules survive excitons at the Mott transition.

Shahmohammadi M, Jacopin G, Rossbach G, Levrat J, Feltin E, Carlin JF, Ganière JD, Butté R, Grandjean N, Deveaud B.

Nat Commun. 2014 Oct 24;5:5251. doi: 10.1038/ncomms6251.

PMID:
25341721
10.

Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.

Tchernycheva M, Messanvi A, de Luna Bugallo A, Jacopin G, Lavenus P, Rigutti L, Zhang H, Halioua Y, Julien FH, Eymery J, Durand C.

Nano Lett. 2014 Jun 11;14(6):3515-20. doi: 10.1021/nl501124s. Epub 2014 May 22.

PMID:
24837282
11.

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

Tchernycheva M, Lavenus P, Zhang H, Babichev AV, Jacopin G, Shahmohammadi M, Julien FH, Ciechonski R, Vescovi G, Kryliouk O.

Nano Lett. 2014 May 14;14(5):2456-65. doi: 10.1021/nl5001295. Epub 2014 Apr 23.

PMID:
24742151
12.

Exciton drift in semiconductors under uniform strain gradients: application to bent ZnO microwires.

Fu X, Jacopin G, Shahmohammadi M, Liu R, Benameur M, Ganière JD, Feng J, Guo W, Liao ZM, Deveaud B, Yu D.

ACS Nano. 2014 Apr 22;8(4):3412-20. doi: 10.1021/nn4062353. Epub 2014 Mar 27.

PMID:
24654837
13.

Coupling atom probe tomography and photoluminescence spectroscopy: exploratory results and perspectives.

Rigutti L, Vella A, Vurpillot F, Gaillard A, Sevelin-Radiguet N, Houard J, Hideur A, Martel G, Jacopin G, De Luna Bugallo A, Deconihout B.

Ultramicroscopy. 2013 Sep;132:75-80. doi: 10.1016/j.ultramic.2013.02.002. Epub 2013 Feb 19.

PMID:
23489908
14.

Optical properties of GaN-based nanowires containing a single Al(0.14)Ga(0.86)N/GaN quantum disc.

Jacopin G, Rigutti L, Teubert J, Julien FH, Furtmayr F, Komninou P, Kehagias T, Eickhoff M, Tchernycheva M.

Nanotechnology. 2013 Mar 29;24(12):125201. doi: 10.1088/0957-4484/24/12/125201. Epub 2013 Mar 4.

PMID:
23459100
15.

Self-assembled GaN quantum wires on GaN/AlN nanowire templates.

Arbiol J, Magen C, Becker P, Jacopin G, Chernikov A, Schäfer S, Furtmayr F, Tchernycheva M, Rigutti L, Teubert J, Chatterjee S, Morante JR, Eickhoff M.

Nanoscale. 2012 Dec 7;4(23):7517-24. doi: 10.1039/c2nr32173d.

PMID:
23100169
16.

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires.

Zagonel LF, Rigutti L, Tchernycheva M, Jacopin G, Songmuang R, Kociak M.

Nanotechnology. 2012 Nov 16;23(45):455205. doi: 10.1088/0957-4484/23/45/455205. Epub 2012 Oct 22.

PMID:
23090422
17.

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.

Jacopin G, Rigutti L, Bellei S, Lavenus P, Julien FH, Davydov AV, Tsvetkov D, Bertness KA, Sanford NA, Schlager JB, Tchernycheva M.

Nanotechnology. 2012 Aug 17;23(32):325701. doi: 10.1088/0957-4484/23/32/325701. Epub 2012 Jul 17.

PMID:
22802219
18.

Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate.

Tchernycheva M, Rigutti L, Jacopin G, de Luna Bugallo A, Lavenus P, Julien FH, Timofeeva M, Bouravleuv AD, Cirlin GE, Dhaka V, Lipsanen H, Largeau L.

Nanotechnology. 2012 Jul 5;23(26):265402. doi: 10.1088/0957-4484/23/26/265402. Epub 2012 Jun 15.

PMID:
22699243
19.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.

PMID:
21967509
20.

High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires.

Jacopin G, Rigutti L, Bugallo Ade L, Julien FH, Baratto C, Comini E, Ferroni M, Tchernycheva M.

Nanoscale Res Lett. 2011 Aug 19;6(1):501. doi: 10.1186/1556-276X-6-501.

21.

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure.

Zagonel LF, Mazzucco S, Tencé M, March K, Bernard R, Laslier B, Jacopin G, Tchernycheva M, Rigutti L, Julien FH, Songmuang R, Kociak M.

Nano Lett. 2011 Feb 9;11(2):568-73. doi: 10.1021/nl103549t. Epub 2010 Dec 23.

PMID:
21182283
22.

Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs.

Rigutti L, Jacopin G, Bugallo Ade L, Tchernycheva M, Warde E, Julien FH, Songmuang R, Galopin E, Largeau L, Harmand JC.

Nanotechnology. 2010 Oct 22;21(42):425206. doi: 10.1088/0957-4484/21/42/425206. Epub 2010 Sep 24.

PMID:
20864782
23.

Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.

Bugallo Ade L, Tchernycheva M, Jacopin G, Rigutti L, Julien FH, Chou ST, Lin YT, Tseng PH, Tu LW.

Nanotechnology. 2010 Aug 6;21(31):315201. doi: 10.1088/0957-4484/21/31/315201. Epub 2010 Jul 15.

PMID:
20634569
24.

Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire.

Rigutti L, Tchernycheva M, De Luna Bugallo A, Jacopin G, Julien FH, Zagonel LF, March K, Stephan O, Kociak M, Songmuang R.

Nano Lett. 2010 Aug 11;10(8):2939-43. doi: 10.1021/nl1010977. Erratum in: Nano Lett. 2010 Oct 13;10(10):4284.

PMID:
20617803

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