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Items: 28

1.

Memristive and CMOS Devices for Neuromorphic Computing.

Milo V, Malavena G, Monzio Compagnoni C, Ielmini D.

Materials (Basel). 2020 Jan 1;13(1). pii: E166. doi: 10.3390/ma13010166. Review.

2.

Emerging neuromorphic devices.

Ielmini D, Ambrogio S.

Nanotechnology. 2019 Nov 7;31(9):092001. doi: 10.1088/1361-6528/ab554b. [Epub ahead of print]

PMID:
31698347
3.

Solving matrix equations in one step with cross-point resistive arrays.

Sun Z, Pedretti G, Ambrosi E, Bricalli A, Wang W, Ielmini D.

Proc Natl Acad Sci U S A. 2019 Mar 5;116(10):4123-4128. doi: 10.1073/pnas.1815682116. Epub 2019 Feb 19.

4.

Phase-change memories (PCM) - Experiments and modelling: general discussion.

Bartlett P, Berg AI, Bernasconi M, Brown S, Burr G, Foroutan-Nejad C, Gale E, Huang R, Ielmini D, Kissling G, Kolosov V, Kozicki M, Nakamura H, Rushchanskii K, Salinga M, Shluger A, Thompson D, Valov I, Wang W, Waser R, Williams RS.

Faraday Discuss. 2019 Feb 18;213(0):393-420. doi: 10.1039/C8FD90064G. No abstract available.

PMID:
30697618
5.

Synaptic and neuromorphic functions: general discussion.

Berg AI, Brivio S, Brown S, Burr G, Deswal S, Deuermeier J, Gale E, Hwang H, Ielmini D, Indiveri G, Kenyon AJ, Kiazadeh A, Köymen I, Kozicki M, Li Y, Mannion D, Prodromakis T, Ricciardi C, Siegel S, Speckbacher M, Valov I, Wang W, Williams RS, Wouters D, Yang Y.

Faraday Discuss. 2019 Feb 18;213(0):553-578. doi: 10.1039/C8FD90065E. No abstract available.

PMID:
30697617
6.

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion.

Aono M, Baeumer C, Bartlett P, Brivio S, Burr G, Burriel M, Carlos E, Deswal S, Deuermeier J, Dittmann R, Du H, Gale E, Hambsch S, Hilgenkamp H, Ielmini D, Kenyon AJ, Kiazadeh A, Kindsmüller A, Kissling G, Köymen I, Menzel S, Pla Asesio D, Prodromakis T, Santamaria M, Shluger A, Thompson D, Valov I, Wang W, Waser R, Williams RS, Wrana D, Wouters D, Yang Y, Zaffora A.

Faraday Discuss. 2019 Feb 18;213(0):259-286. doi: 10.1039/c8fd90057d. No abstract available.

PMID:
30664143
7.

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion.

Ambrosi E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga MA, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, Goux L, Hasegawa T, Hilgenkamp H, Huang R, Ibrahim S, Ielmini D, Kenyon AJ, Kolosov V, Li Y, Majumdar S, Milano G, Prodromakis T, Raeishosseini N, Rana V, Ricciardi C, Santamaria M, Shluger A, Valov I, Waser R, Williams RS, Wouters D, Yang Y, Zaffora A.

Faraday Discuss. 2019 Feb 18;213(0):115-150. doi: 10.1039/c8fd90059k. No abstract available.

PMID:
30663725
8.

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices.

Wang W, Wang M, Ambrosi E, Bricalli A, Laudato M, Sun Z, Chen X, Ielmini D.

Nat Commun. 2019 Jan 8;10(1):81. doi: 10.1038/s41467-018-07979-0.

9.

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.

Ambrosi E, Bricalli A, Laudato M, Ielmini D.

Faraday Discuss. 2019 Feb 18;213(0):87-98. doi: 10.1039/c8fd00106e.

PMID:
30364922
10.

Computing of temporal information in spiking neural networks with ReRAM synapses.

Wang W, Pedretti G, Milo V, Carboni R, Calderoni A, Ramaswamy N, Spinelli AS, Ielmini D.

Faraday Discuss. 2019 Feb 18;213(0):453-469. doi: 10.1039/c8fd00097b.

11.

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses.

Wang W, Pedretti G, Milo V, Carboni R, Calderoni A, Ramaswamy N, Spinelli AS, Ielmini D.

Sci Adv. 2018 Sep 12;4(9):eaat4752. doi: 10.1126/sciadv.aat4752. eCollection 2018 Sep.

12.

Logic Computing with Stateful Neural Networks of Resistive Switches.

Sun Z, Ambrosi E, Bricalli A, Ielmini D.

Adv Mater. 2018 Sep;30(38):e1802554. doi: 10.1002/adma.201802554. Epub 2018 Aug 5.

PMID:
30079525
13.

Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch.

Wang M, Wang W, Leow WR, Wan C, Chen G, Zeng Y, Yu J, Liu Y, Cai P, Wang H, Ielmini D, Chen X.

Adv Mater. 2018 Jul 3:e1802516. doi: 10.1002/adma.201802516. [Epub ahead of print]

PMID:
29971867
14.

Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

Mehonic A, Shluger AL, Gao D, Valov I, Miranda E, Ielmini D, Bricalli A, Ambrosi E, Li C, Yang JJ, Xia Q, Kenyon AJ.

Adv Mater. 2018 Oct;30(43):e1801187. doi: 10.1002/adma.201801187. Epub 2018 Jun 29. Review.

PMID:
29957849
15.

Publisher Correction: Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity.

Pedretti G, Milo V, Ambrogio S, Carboni R, Bianchi S, Calderoni A, Ramaswamy N, Spinelli AS, Ielmini D.

Sci Rep. 2018 Jun 18;8(1):9485. doi: 10.1038/s41598-018-26716-7.

16.

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity.

Pedretti G, Milo V, Ambrogio S, Carboni R, Bianchi S, Calderoni A, Ramaswamy N, Spinelli AS, Ielmini D.

Sci Rep. 2017 Jul 13;7(1):5288. doi: 10.1038/s41598-017-05480-0. Erratum in: Sci Rep. 2018 Jun 18;8(1):9485.

17.

Bipolar switching in chalcogenide phase change memory.

Ciocchini N, Laudato M, Boniardi M, Varesi E, Fantini P, Lacaita AL, Ielmini D.

Sci Rep. 2016 Jul 5;6:29162. doi: 10.1038/srep29162.

18.

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses.

Ambrogio S, Ciocchini N, Laudato M, Milo V, Pirovano A, Fantini P, Ielmini D.

Front Neurosci. 2016 Mar 8;10:56. doi: 10.3389/fnins.2016.00056. eCollection 2016.

19.

A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems.

Wang Z, Ambrogio S, Balatti S, Ielmini D.

Front Neurosci. 2015 Jan 15;8:438. doi: 10.3389/fnins.2014.00438. eCollection 2014.

20.

Impact of the mechanical stress on switching characteristics of electrochemical resistive memory.

Ambrogio S, Balatti S, Choi S, Ielmini D.

Adv Mater. 2014 Jun 18;26(23):3885-92. doi: 10.1002/adma.201306250. Epub 2014 Mar 26. No abstract available.

PMID:
24668899
21.

Spike-timing dependent plasticity in a transistor-selected resistive switching memory.

Ambrogio S, Balatti S, Nardi F, Facchinetti S, Ielmini D.

Nanotechnology. 2013 Sep 27;24(38):384012. doi: 10.1088/0957-4484/24/38/384012. Epub 2013 Sep 2.

PMID:
23999495
22.

Logic computation in phase change materials by threshold and memory switching.

Cassinerio M, Ciocchini N, Ielmini D.

Adv Mater. 2013 Nov 6;25(41):5975-80. doi: 10.1002/adma.201301940. Epub 2013 Aug 15.

PMID:
23946217
23.

Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament.

Balatti S, Larentis S, Gilmer DC, Ielmini D.

Adv Mater. 2013 Mar 13;25(10):1474-8. doi: 10.1002/adma.201204097. Epub 2013 Jan 3.

PMID:
23288623
24.

Self-aligned nanotube-nanowire phase change memory.

Xiong F, Bae MH, Dai Y, Liao AD, Behnam A, Carrion EA, Hong S, Ielmini D, Pop E.

Nano Lett. 2013 Feb 13;13(2):464-9. doi: 10.1021/nl3038097. Epub 2013 Jan 11.

PMID:
23259592
25.

Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.

Cagli C, Nardi F, Harteneck B, Tan Z, Zhang Y, Ielmini D.

Small. 2011 Oct 17;7(20):2899-905. doi: 10.1002/smll.201101157. Epub 2011 Aug 23.

PMID:
21874659
26.

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories.

Ielmini D, Nardi F, Cagli C.

Nanotechnology. 2011 Jun 24;22(25):254022. doi: 10.1088/0957-4484/22/25/254022. Epub 2011 May 16.

PMID:
21572207
27.

Phase change materials and their application to nonvolatile memories.

Raoux S, Wełnic W, Ielmini D.

Chem Rev. 2010 Jan;110(1):240-67. doi: 10.1021/cr900040x. No abstract available.

PMID:
19715293
28.

Silicon nanocrystal memories: a status update.

Compagnoni CM, Gusmeroli R, Ielmini D, Spinelli AS, Lacaita AL.

J Nanosci Nanotechnol. 2007 Jan;7(1):193-205. Review.

PMID:
17455484

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