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Items: 12

1.

Gigahertz Single-Electron Pumping Mediated by Parasitic States.

Rossi A, Klochan J, Timoshenko J, Hudson FE, Möttönen M, Rogge S, Dzurak AS, Kashcheyevs V, Tettamanzi GC.

Nano Lett. 2018 Jul 11;18(7):4141-4147. doi: 10.1021/acs.nanolett.8b00874. Epub 2018 Jun 26.

PMID:
29916248
2.

A dressed spin qubit in silicon.

Laucht A, Kalra R, Simmons S, Dehollain JP, Muhonen JT, Mohiyaddin FA, Freer S, Hudson FE, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A.

Nat Nanotechnol. 2017 Jan;12(1):61-66. doi: 10.1038/nnano.2016.178. Epub 2016 Oct 17.

PMID:
27749833
3.

Electrically controlling single-spin qubits in a continuous microwave field.

Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A.

Sci Adv. 2015 Apr 10;1(3):e1500022. doi: 10.1126/sciadv.1500022. eCollection 2015 Apr.

4.

A two-qubit logic gate in silicon.

Veldhorst M, Yang CH, Hwang JC, Huang W, Dehollain JP, Muhonen JT, Simmons S, Laucht A, Hudson FE, Itoh KM, Morello A, Dzurak AS.

Nature. 2015 Oct 15;526(7573):410-4. doi: 10.1038/nature15263. Epub 2015 Oct 5.

PMID:
26436453
5.

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot.

Li R, Hudson FE, Dzurak AS, Hamilton AR.

Nano Lett. 2015 Nov 11;15(11):7314-8. doi: 10.1021/acs.nanolett.5b02561. Epub 2015 Oct 12.

PMID:
26434407
6.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

Rossi A, Tanttu T, Hudson FE, Sun Y, Möttönen M, Dzurak AS.

J Vis Exp. 2015 Jun 3;(100):e52852. doi: 10.3791/52852.

7.

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.

Muhonen JT, Laucht A, Simmons S, Dehollain JP, Kalra R, Hudson FE, Freer S, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A.

J Phys Condens Matter. 2015 Apr 22;27(15):154205. doi: 10.1088/0953-8984/27/15/154205. Epub 2015 Mar 18.

PMID:
25783435
8.

Single atom devices by ion implantation.

van Donkelaar J, Yang C, Alves AD, McCallum JC, Hougaard C, Johnson BC, Hudson FE, Dzurak AS, Morello A, Spemann D, Jamieson DN.

J Phys Condens Matter. 2015 Apr 22;27(15):154204. doi: 10.1088/0953-8984/27/15/154204. Epub 2015 Mar 18.

PMID:
25783169
9.

Storing quantum information for 30 seconds in a nanoelectronic device.

Muhonen JT, Dehollain JP, Laucht A, Hudson FE, Kalra R, Sekiguchi T, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A.

Nat Nanotechnol. 2014 Dec;9(12):986-91. doi: 10.1038/nnano.2014.211. Epub 2014 Oct 12.

PMID:
25305745
10.

An addressable quantum dot qubit with fault-tolerant control-fidelity.

Veldhorst M, Hwang JC, Yang CH, Leenstra AW, de Ronde B, Dehollain JP, Muhonen JT, Hudson FE, Itoh KM, Morello A, Dzurak AS.

Nat Nanotechnol. 2014 Dec;9(12):981-5. doi: 10.1038/nnano.2014.216. Epub 2014 Oct 12.

PMID:
25305743
11.

Gate-controlled charge transfer in Si:P double quantum dots.

Hudson FE, Ferguson AJ, Escott CC, Yang C, Jamieson DN, Clark RG, Dzurak AS.

Nanotechnology. 2008 May 14;19(19):195402. doi: 10.1088/0957-4484/19/19/195402. Epub 2008 Apr 7.

PMID:
21825715
12.

Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair transistor.

Ferguson AJ, Court NA, Hudson FE, Clark RG.

Phys Rev Lett. 2006 Sep 8;97(10):106603. Epub 2006 Sep 7.

PMID:
17025837

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