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Science. 2017 Mar 17;355(6330):1203-1206. doi: 10.1126/science.aam5830. Epub 2017 Mar 16.

Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics.

Author information

1
Department of Materials Science and Engineering and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, MO 65409, USA.
2
Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, MO 65409, USA.
3
School of Engineering, Brown University, Providence, RI 02912, USA.
4
Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, MO 65409, USA. jswitzer@mst.edu.

Abstract

We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiO x layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.

PMID:
28302857
DOI:
10.1126/science.aam5830

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