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Items: 23

1.

Slow relaxation of excited states in strain-induced quantum dots.

Gfroerer TH, Sturge MD, Kash K, Yater JA, Plaut AS, Lin PS, Florez LT, Harbison JP, Das SR, Lebrun L.

Phys Rev B Condens Matter. 1996 Jun 15;53(24):16474-16480. No abstract available.

PMID:
9983489
2.

Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots.

Zhang Y, Sturge MD, Kash K, van der Gaag BP, Gozdz AS, Florez LT, Harbison JP.

Phys Rev B Condens Matter. 1995 May 15;51(19):13303-13314. No abstract available.

PMID:
9978133
3.

Real-time observation of atomic ordering in (001) In0.53Ga0.47As epitaxial layers.

Philips BA, Kamiya I I, Hingerl K, Florez LT, Aspnes DE, Mahajan S, Harbison JP.

Phys Rev Lett. 1995 May 1;74(18):3640-3643. No abstract available.

PMID:
10058256
4.

Photon-mediated sequential resonant tunneling in intense terahertz electric fields.

GuimarĂ£es PS, Keay BJ, Kaminski JP, Allen SJ Jr, Hopkins PF, Gossard AC, Florez LT, Harbison JP.

Phys Rev Lett. 1993 Jun 14;70(24):3792-3795. No abstract available.

PMID:
10053963
5.

Fano-like resonant interference in Raman spectra of electronic and LO-vibronic excitations in periodically delta -doped GaAs.

Nunes LA, Ioriatti L, Florez LT, Harbison JP.

Phys Rev B Condens Matter. 1993 May 15;47(19):13011-13014. No abstract available.

PMID:
10005514
6.

Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum.

Kamiya I I, Aspnes DE, Florez LT, Harbison JP.

Phys Rev B Condens Matter. 1992 Dec 15;46(24):15894-15904. No abstract available.

PMID:
10003729
7.

Metastable energy distribution and localization of spatially indirect excitons.

Golub JE, Kash K, Harbison JP, Florez LT.

Phys Rev B Condens Matter. 1992 Apr 15;45(16):9477-9480. No abstract available.

PMID:
10000825
8.

Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition.

Kamiya I I, Aspnes DE, Tanaka H, Florez LT, Harbison JP, Bhat R.

Phys Rev Lett. 1992 Feb 3;68(5):627-630. No abstract available.

PMID:
10045949
9.

Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy.

Mao D, Santos M, Shayegan M, Kahn A, Le Lay G, Hwu Y, Margaritondo G, Florez LT, Harbison JP.

Phys Rev B Condens Matter. 1992 Jan 15;45(3):1273-1283. No abstract available.

PMID:
10001605
10.

Observation of pair currents in superconductor-semiconductor contacts.

Kastalsky A, Kleinsasser AW, Greene LH, Bhat R, Milliken FP, Harbison JP.

Phys Rev Lett. 1991 Nov 18;67(21):3026-3029. No abstract available.

PMID:
10044619
11.

Observation of quantum confinement by strain gradients.

Kash K, Van der Gaag BP, Mahoney DD, Gozdz AS, Florez LT, Harbison JP, Sturge MD.

Phys Rev Lett. 1991 Sep 2;67(10):1326-1329. No abstract available.

PMID:
10044117
12.

Far-infrared spectroscopy of minibands and confined donors in GaAs/AlxGa1-xAs superlattices.

Helm M, Peeters FM, DeRosa F, Colas E, Harbison JP, Florez LT.

Phys Rev B Condens Matter. 1991 Jun 15;43(17):13983-13991. No abstract available.

PMID:
9997267
13.

Long-lived spatially indirect excitons in coupled GaAs/AlxGa1-xAs quantum wells.

Golub JE, Kash K, Harbison JP, Florez LT.

Phys Rev B Condens Matter. 1990 Apr 15;41(12):8564-8567. No abstract available.

PMID:
9993192
14.

Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers.

Brozak G, de Andrada e Silva EA, Sham LJ, DeRosa F, Miceli P, Schwarz SA, Harbison JP, Florez LT, Allen SJ Jr.

Phys Rev Lett. 1990 Jan 22;64(4):471-474. No abstract available.

PMID:
10041988
15.

Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs.

Aspnes DE, Chang YC, Studna AA, Florez LT, Farrell HH, Harbison JP.

Phys Rev Lett. 1990 Jan 8;64(2):192-195. No abstract available.

PMID:
10041673
16.

GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy.

Sandroff CJ, Harbison JP, Ramesh R, Andrejco MJ, Hegde MS, Chang CC, Vogel EM, Hwang DM.

Science. 1989 Jul 28;245(4916):391-3.

PMID:
17744146
17.

Quenching of the Hall effect in a one-dimensional wire.

Roukes ML, Scherer A, Allen SJ Jr, Craighead HG, Ruthen RM, Beebe ED, Harbison JP.

Phys Rev Lett. 1987 Dec 28;59(26):3011-3014. No abstract available.

PMID:
10035710
18.

Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001).

Aspnes DE, Harbison JP, Studna AA, Florez LT.

Phys Rev Lett. 1987 Oct 12;59(15):1687-1690. No abstract available.

PMID:
10035303
19.

Light-induced defect creation in hydrogenated amorphous silicon: A detailed examination using junction-capacitance methods.

Mahavadi KK, Zellama K, Cohen JD, Harbison JP.

Phys Rev B Condens Matter. 1987 May 15;35(14):7776-7779. No abstract available.

PMID:
9941103
20.

Observtion of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films.

Michelson CE, Gelatos AV, Cohen JD, Harbison JP.

Phys Rev B Condens Matter. 1987 Mar 15;35(8):4141-4144. No abstract available.

PMID:
9941955
21.

Photoluminescence in ultrathin a-Si:H layers.

Wilson BA, Taylor CM, Harbison JP.

Phys Rev B Condens Matter. 1986 Dec 15;34(12):8733-8739. No abstract available.

PMID:
9939594
22.

Layer-thickness dependence of cw photoluminescence in single a-Si:H layers.

Wilson BA, Taylor CM, Harbison JP.

Phys Rev B Condens Matter. 1986 Sep 15;34(6):4429-4431. No abstract available.

PMID:
9940232
23.

Optical studies of thermalization mechanisms in a-Si:H.

Wilson BA, Kerwin TP, Harbison JP.

Phys Rev B Condens Matter. 1985 Jun 15;31(12):7953-7957. No abstract available.

PMID:
9935742

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