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Items: 14

1.

Tailoring emergent spin phenomena in Dirac material heterostructures.

Khokhriakov D, Cummings AW, Song K, Vila M, Karpiak B, Dankert A, Roche S, Dash SP.

Sci Adv. 2018 Sep 21;4(9):eaat9349. doi: 10.1126/sciadv.aat9349. eCollection 2018 Sep.

2.

Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures.

Dankert A, Karpiak B, Dash SP.

Sci Rep. 2017 Nov 9;7(1):15231. doi: 10.1038/s41598-017-12277-8.

3.

Electrical gate control of spin current in van der Waals heterostructures at room temperature.

Dankert A, Dash SP.

Nat Commun. 2017 Jul 5;8:16093. doi: 10.1038/ncomms16093.

4.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

Dankert A, Pashaei P, Kamalakar MV, Gaur APS, Sahoo S, Rungger I, Narayan A, Dolui K, Hoque MA, Patel RS, de Jong MP, Katiyar RS, Sanvito S, Dash SP.

ACS Nano. 2017 Jun 27;11(6):6389-6395. doi: 10.1021/acsnano.7b02819. Epub 2017 May 30.

PMID:
28557439
5.

Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures.

Kamalakar MV, Dankert A, Kelly PJ, Dash SP.

Sci Rep. 2016 Feb 17;6:21168. doi: 10.1038/srep21168.

6.

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators.

Dankert A, Geurs J, Kamalakar MV, Charpentier S, Dash SP.

Nano Lett. 2015 Dec 9;15(12):7976-81. doi: 10.1021/acs.nanolett.5b03080. Epub 2015 Nov 11.

PMID:
26560203
7.

Long distance spin communication in chemical vapour deposited graphene.

Kamalakar MV, Groenveld C, Dankert A, Dash SP.

Nat Commun. 2015 Apr 10;6:6766. doi: 10.1038/ncomms7766.

8.

Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.

Kamalakar MV, Madhushankar BN, Dankert A, Dash SP.

Small. 2015 May 13;11(18):2209-16. doi: 10.1002/smll.201402900. Epub 2015 Jan 14.

PMID:
25586013
9.

Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride.

Kamalakar MV, Dankert A, Bergsten J, Ive T, Dash SP.

Sci Rep. 2014 Aug 26;4:6146. doi: 10.1038/srep06146.

10.

High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts.

Dankert A, Langouche L, Kamalakar MV, Dash SP.

ACS Nano. 2014 Jan 28;8(1):476-82. doi: 10.1021/nn404961e. Epub 2014 Jan 8.

PMID:
24377305
11.

Efficient spin injection into silicon and the role of the Schottky barrier.

Dankert A, Dulal RS, Dash SP.

Sci Rep. 2013 Nov 12;3:3196. doi: 10.1038/srep03196.

12.

Fear of progression in chronic diseases: psychometric properties of the Fear of Progression Questionnaire.

Herschbach P, Berg P, Dankert A, Duran G, Engst-Hastreiter U, Waadt S, Keller M, Ukat R, Henrich G.

J Psychosom Res. 2005 Jun;58(6):505-11.

PMID:
16125517
13.

[Fear of progression in patients with cancer, diabetes mellitus and chronic arthritis].

Dankert A, Duran G, Engst-Hastreiter U, Keller M, Waadt S, Henrich G, Herschbach P.

Rehabilitation (Stuttg). 2003 Jun;42(3):155-63. German.

PMID:
12813652
14.

Intraoperative corneal topography for image registration.

Schruender SA, Fuchs H, Spasovski S, Dankert A.

J Refract Surg. 2002 Sep-Oct;18(5):S624-9.

PMID:
12361170

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