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Items: 10

1.

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach.

Masullo M, Bergamaschini R, Albani M, Kreiliger T, Mauceri M, Crippa D, La Via F, Montalenti F, von Känel H, Miglio L.

Materials (Basel). 2019 Oct 1;12(19). pii: E3223. doi: 10.3390/ma12193223.

2.

Optically reconfigurable polarized emission in Germanium.

De Cesari S, Bergamaschini R, Vitiello E, Giorgioni A, Pezzoli F.

Sci Rep. 2018 Jul 24;8(1):11119. doi: 10.1038/s41598-018-29409-3.

3.

Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires.

Albani M, Assali S, Verheijen MA, Koelling S, Bergamaschini R, Pezzoli F, Bakkers EPAM, Miglio L.

Nanoscale. 2018 Apr 19;10(15):7250-7256. doi: 10.1039/c7nr09568f.

PMID:
29632946
4.

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD.

Yamamoto Y, Zaumseil P, Capellini G, Andreas Schubert M, Hesse A, Albani M, Bergamaschini R, Montalenti F, Schroeder T, Tillack B.

Nanotechnology. 2017 Dec 1;28(48):485303. doi: 10.1088/1361-6528/aa91c1.

PMID:
28985186
5.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

Skibitzki O, Capellini G, Yamamoto Y, Zaumseil P, Schubert MA, Schroeder T, Ballabio A, Bergamaschini R, Salvalaglio M, Miglio L, Montalenti F.

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26374-26380. Epub 2016 Sep 26.

PMID:
27603117
6.

Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si.

Salvalaglio M, Bergamaschini R, Isa F, Scaccabarozzi A, Isella G, Backofen R, Voigt A, Montalenti F, Capellini G, Schroeder T, von Känel H, Miglio L.

ACS Appl Mater Interfaces. 2015 Sep 2;7(34):19219-25. doi: 10.1021/acsami.5b05054. Epub 2015 Aug 20.

PMID:
26252761
7.

Anomalous smoothing preceding island formation during growth on patterned substrates.

Bergamaschini R, Tersoff J, Tu Y, Zhang JJ, Bauer G, Montalenti F.

Phys Rev Lett. 2012 Oct 12;109(15):156101. Epub 2012 Oct 9.

PMID:
23102337
8.

Scaling hetero-epitaxy from layers to three-dimensional crystals.

Falub CV, von Känel H, Isa F, Bergamaschini R, Marzegalli A, Chrastina D, Isella G, Müller E, Niedermann P, Miglio L.

Science. 2012 Mar 16;335(6074):1330-4. doi: 10.1126/science.1217666.

9.

Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001).

Bergamaschini R, Brehm M, Grydlik M, Fromherz T, Bauer G, Montalenti F.

Nanotechnology. 2011 Jul 15;22(28):285704. doi: 10.1088/0957-4484/22/28/285704. Epub 2011 Jun 7.

PMID:
21646691
10.

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).

Bergamaschini R, Montalenti F, Miglio L.

Nanoscale Res Lett. 2010 Aug 6;5(12):1873-7. doi: 10.1007/s11671-010-9723-x.

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