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Items: 25

1.

New strategies for producing defect free SiGe strained nanolayers.

David T, Aqua JN, Liu K, Favre L, Ronda A, Abbarchi M, Claude JB, Berbezier I.

Sci Rep. 2018 Feb 13;8(1):2891. doi: 10.1038/s41598-018-21299-9.

2.

Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures.

Naffouti M, Backofen R, Salvalaglio M, Bottein T, Lodari M, Voigt A, David T, Benkouider A, Fraj I, Favre L, Ronda A, Berbezier I, Grosso D, Abbarchi M, Bollani M.

Sci Adv. 2017 Nov 10;3(11):eaao1472. doi: 10.1126/sciadv.aao1472. eCollection 2017 Nov.

3.

Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation.

David T, Liu K, Ronda A, Favre L, Abbarchi M, Gailhanou M, Gentile P, Buttard D, Calvo V, Amato M, Aqua JN, Berbezier I.

Nano Lett. 2017 Dec 13;17(12):7299-7305. doi: 10.1021/acs.nanolett.7b02832. Epub 2017 Nov 14.

PMID:
29116815
4.

Formation of Silicene Nanosheets on Graphite.

De Crescenzi M, Berbezier I, Scarselli M, Castrucci P, Abbarchi M, Ronda A, Jardali F, Park J, Vach H.

ACS Nano. 2016 Dec 27;10(12):11163-11171. doi: 10.1021/acsnano.6b06198. Epub 2016 Nov 16.

PMID:
28024331
5.

Templated Solid-State Dewetting of Thin Silicon Films.

Naffouti M, David T, Benkouider A, Favre L, Delobbe A, Ronda A, Berbezier I, Abbarchi M.

Small. 2016 Nov;12(44):6115-6123. doi: 10.1002/smll.201601744. Epub 2016 Sep 22.

PMID:
27717242
6.

van der Waals Heteroepitaxy of Germanene Islands on Graphite.

Persichetti L, Jardali F, Vach H, Sgarlata A, Berbezier I, Crescenzi MD, Balzarotti A.

J Phys Chem Lett. 2016 Aug 18;7(16):3246-51. doi: 10.1021/acs.jpclett.6b01284. Epub 2016 Aug 8.

PMID:
27487453
7.

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry.

Naffouti M, David T, Benkouider A, Favre L, Cabie M, Ronda A, Berbezier I, Abbarchi M.

Nanotechnology. 2016 Jul 29;27(30):305602. doi: 10.1088/0957-4484/27/30/305602. Epub 2016 Jun 15.

PMID:
27302611
8.

Correction: Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

Naffouti M, David T, Benkouider A, Favre L, Ronda A, Berbezier I, Bidault S, Bonod N, Abbarchi M.

Nanoscale. 2016 Apr 14;8(14):7768. doi: 10.1039/c6nr90067d.

PMID:
26991596
9.

Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

Naffouti M, David T, Benkouider A, Favre L, Ronda A, Berbezier I, Bidault S, Bonod N, Abbarchi M.

Nanoscale. 2016 Feb 7;8(5):2844-9. doi: 10.1039/c5nr07597a. Erratum in: Nanoscale. 2016 Apr 14;8(14):7768.

PMID:
26763192
10.

Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting.

Benkouider A, Ronda A, David T, Favre L, Abbarchi M, Naffouti M, Osmond J, Delobbe A, Sudraud P, Berbezier I.

Nanotechnology. 2015 Dec 18;26(50):505602. doi: 10.1088/0957-4484/26/50/505602. Epub 2015 Nov 18.

PMID:
26579983
11.

Self-assembly of nanostructures and nanomaterials.

Berbezier I, De Crescenzi M.

Beilstein J Nanotechnol. 2015 Jun 24;6:1397-8. doi: 10.3762/bjnano.6.144. eCollection 2015. No abstract available.

12.

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111).

Lockwood DJ, Rowell NL, Benkouider A, Ronda A, Favre L, Berbezier I.

Beilstein J Nanotechnol. 2014 Dec 30;5:2498-504. doi: 10.3762/bjnano.5.259. eCollection 2014.

13.

Si/Ge intermixing during Ge Stranski-Krastanov growth.

Portavoce A, Hoummada K, Ronda A, Mangelinck D, Berbezier I.

Beilstein J Nanotechnol. 2014 Dec 9;5:2374-82. doi: 10.3762/bjnano.5.246. eCollection 2014.

14.

Wafer scale formation of monocrystalline silicon-based Mie resonators via silicon-on-insulator dewetting.

Abbarchi M, Naffouti M, Vial B, Benkouider A, Lermusiaux L, Favre L, Ronda A, Bidault S, Berbezier I, Bonod N.

ACS Nano. 2014 Nov 25;8(11):11181-90. doi: 10.1021/nn505632b. Epub 2014 Nov 6.

PMID:
25365786
15.

Selective growth and ordering of SiGe nanowires for band gap engineering.

Benkouider A, Ronda A, Gouyé A, Herrier C, Favre L, Lockwood DJ, Rowell NL, Delobbe A, Sudraud P, Berbezier I.

Nanotechnology. 2014 Aug 22;25(33):335303. doi: 10.1088/0957-4484/25/33/335303. Epub 2014 Jul 30.

PMID:
25074329
16.

Diffusion induced effects on geometry of Ge nanowires.

Rezvani SJ, Pinto N, Boarino L, Celegato F, Favre L, Berbezier I.

Nanoscale. 2014 Jul 7;6(13):7469-73. doi: 10.1039/c4nr01084a.

PMID:
24881677
17.

Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering.

Reparaz JS, Peica N, Kirste R, Goñi AR, Wagner MR, Callsen G, Alonso MI, Garriga M, Marcus IC, Ronda A, Berbezier I, Maultzsch J, Thomsen C, Hoffmann A.

Nanotechnology. 2013 May 10;24(18):185704. doi: 10.1088/0957-4484/24/18/185704. Epub 2013 Apr 11.

PMID:
23579463
18.

Interrupted self-organization of SiGe pyramids.

Aqua JN, Gouyé A, Ronda A, Frisch T, Berbezier I.

Phys Rev Lett. 2013 Mar 1;110(9):096101. Epub 2013 Feb 26.

PMID:
23496727
19.

Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100).

De Padova P, Olivieri B, Mariot JM, Favre L, Berbezier I, Quaresima C, Paci B, Generosi A, Rossi Albertini V, Cricenti A, Ottaviani C, Luce M, Testa AM, Peddis D, Fiorani D, Scarselli M, De Crescenzi M, Heckmann O, Richter MC, Hricovini K, d'Acapito F.

J Phys Condens Matter. 2012 Apr 11;24(14):142203. doi: 10.1088/0953-8984/24/14/142203. Epub 2012 Mar 13.

PMID:
22410688
20.

Photocurrent generation in Ge nanocrystal/Si systems.

Castrucci P, Del Gobbo S, Speiser E, Scarselli M, De Crescenzi M, Amiard G, Ronda A, Berbezier I.

J Nanosci Nanotechnol. 2011 Oct;11(10):9227-31.

PMID:
22400328
21.

On morphology and strain field of Ge/Si(001) Islands according to TEM phase imaging method.

Donnadieu P, Neisius T, Amiard G, Gouyé A, Ronda A, Berbezier I.

J Nanosci Nanotechnol. 2011 Oct;11(10):9208-14.

PMID:
22400325
22.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
23.

Conductive AFM microscopy study of the carrier transport and storage in Ge nanocrystals grown by dewetting.

Gacem K, El Hdiy A, Troyon M, Berbezier I, Ronda A.

Nanotechnology. 2010 Feb 10;21(6):065706. doi: 10.1088/0957-4484/21/6/065706. Epub 2010 Jan 8.

PMID:
20057032
24.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
25.

Gallium-mediated homoepitaxial growth of silicon at low temperatures.

Gallas B, Berbezier I I, Chevrier J, Derrien J.

Phys Rev B Condens Matter. 1996 Aug 15;54(7):4919-4925. No abstract available.

PMID:
9986454

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